AOD472A/AOI472A

30V N-Channel AlphaMOS

General Description Product Summary

• Latest Trench Power MOSFET technology VDS 30V

• Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 46A
• Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ
• High Current Capability
RDS(ON) (at VGS = 4.5V) < 10mΩ
• RoHS and Halogen-Free Compliant

Application 100% UIS Tested

• DC/DC Converters in Computing 100% Rg Tested
• Isolated DC/DC Converters in Telecom and Industrial

TO252 TO-251A
DPAK IPAK D
TopView Bottom View Top View Bottom View

D D

D G
S D G S
D G S
S G D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 46
ID
Current G TC=100°C 36 A
Pulsed Drain Current C IDM 170
Continuous Drain TA=25°C 18
IDSM A
Current TA=70°C 14
C
Avalanche Current IAS 29 A
Avalanche energy L=0.1mH C EAS 42 mJ
VDS Spike 100ns VSPIKE 36 V
TC=25°C 50
PD W
Power Dissipation B TC=100°C 25
TA=25°C 2.5
PDSM W
Power Dissipation A TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 16 20 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 41 50 °C/W
Maximum Junction-to-Case Steady-State RθJC 2.5 3 °C/W

Rev 4: Nov 2012 www.aosmd.com Page 1 of 6

 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.6 2 2.4 V
VGS=10V, ID=20A 4 5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 5.4 6.8
VGS=4.5V, ID=20A 7.1 10 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 83 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
G
IS Maximum Body-Diode Continuous Current 46 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1333 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 512 pF
Crss Reverse Transfer Capacitance 42 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.8 1.7 2.6 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 18.3 33 nC
Qg(4.5V) Total Gate Charge 8.5 17 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 4.8 nC
Qgd Gate Drain Charge 2.5 nC
tD(on) Turn-On DelayTime 7.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 4.8 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 23.3 ns
tf Turn-Off Fall Time 4.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 14.1 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 16.2 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 4: Nov 2012 www.aosmd.com Page 2 of 6

 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
10V 4.5V
6V VDS=5V
80 80
8V 4V

60 60
ID (A)

ID(A)
3.5V

40 40

20 20 125°C
VGS=3V 25°C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

10 1.6

Normalized On-Resistance
8 VGS=4.5V VGS=10V
1.4 ID=20A
Ω)
RDS(ON) (mΩ

6
1.2
4

VGS=10V 1 VGS=4.5V
2 ID=20A

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E)
(Note E)

12 1.0E+02
ID=20A
1.0E+01
9 40
1.0E+00
125°C
Ω)

125°C
RDS(ON) (mΩ

1.0E-01
IS (A)

6
25°C
1.0E-02

3 1.0E-03
25°C
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 4: Nov 2012 www.aosmd.com Page 3 of 6

 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1800

1600
VDS=15V Ciss
8 ID=20A 1400

Capacitance (pF)
1200
VGS (Volts)

6
1000

800
4
600 Coss

2 400

200 Crss

0 0
0 5 10 15 20 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 300

250
100.0 10µs TJ(Max)=150°C
RDS(ON) 10µs
TC=25°C
200
100µs
Power (W)
ID (Amps)

10.0
1ms 150
DC
1.0 10ms
100
TJ(Max)=150°C
0.1
TC=25°C 50

0.0 0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-Case
Safe Operating Area (Note F) (Note F)

10
D=Tonon/T InIndescending
descendingorder
order
Zθ JC Normalized Transient

TJ,PK
J,PK=TC C+PDM
DM.ZθJC
θJC.RθJC
θJC D=0.5,0.3,
D=0.5, 0.3,0.1,
0.1,0.05,
0.05,0.02,
0.02,0.01,
0.01,single
singlepulse
pulse
Thermal Resistance

RθJC=5°C/W
θJC=3°C/W
1

0.1
Single Pulse
Single Pulse

0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 4: Nov 2012 www.aosmd.com Page 4 of 6

 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 60

50 50
Power Dissipation (W)

Current rating ID(A)

40 40

30 30

20 20

10 10

0 0
0 25 50 75 100 125 150 0 25 5075 100 125 150 175
°C)
TCASE (° °C)
TCASE (°
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=50°C/W 40

0.1

Single Pulse
0.01

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 4: Nov 2012 www.aosmd.com Page 5 of 6

 Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 4: Nov 2012 www.aosmd.com Page 6 of 6