AOD2210/AOI2210

200V N-Channel MOSFET

General Description Product Summary

• Trench Power MV MOSFET technology VDS 200V

• Low RDS(ON) ID (at VGS=10V) 18A
• Low Gate Charge RDS(ON) (at VGS=10V) < 105mΩ
• Optimized for fast-switching applications
RDS(ON) (at VGS=5V) < 120mΩ

Applications 100% UIS Tested

100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications

TO-252 TO251A
DPAK IPAK D
Top View Bottom View Top View Bottom View

D
D
D D

G G
S G S
D D
S S S
G
G

Orderable Part Number Package Type Form Minimum Order Quantity

AOD2210 TO-252 Tape & Reel 2500
AOI2210 TO-251A Tube 4000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 18
ID
Current TC=100°C 13 A
Pulsed Drain Current C IDM 45
Continuous Drain TA=25°C 3.0
IDSM A
Current TA=70°C 2.5
C
Avalanche Current IAS 9 A
C
Avalanche energy L=0.1mH EAS 4 mJ
VDS Spike 10µs VSPIKE 240 V
TC=25°C 100
PD W
Power Dissipation B TC=100°C 50
TA=25°C 2.5
PDSM W
Power Dissipation A TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 15 20 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 41 50 °C/W
Maximum Junction-to-Case Steady-State RθJC 1 1.5 °C/W

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 200 V
VDS=200V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 2.0 2.5 V
VGS=10V, ID=18A 87 105
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 185 225
VGS=5V, ID=16A 93 120 mΩ
gFS Forward Transconductance VDS=5V, ID=18A 40 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current 18 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2065 pF
Coss Output Capacitance VGS=0V, VDS=100V, f=1MHz 74 pF
Crss Reverse Transfer Capacitance 3.8 pF
Rg Gate resistance f=1MHz 1.1 2.2 3.3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 27 40 nC
Qg(4.5V) Total Gate Charge 12 20 nC
VGS=10V, VDS=100V, ID=18A
Qgs Gate Source Charge 7 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 8 ns
tr Turn-On Rise Time VGS=10V, VDS=100V, RL=5.5Ω, 10 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 30 ns
tf Turn-Off Fall Time 4 ns
trr Body Diode Reverse Recovery Time IF=18A, dI/dt=500A/µs 60 ns
Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 800 nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.1.0: August 2014 www.aosmd.com Page 2 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
10V VDS=5V
3.5V

4.5V
20 5V 20
ID (A)

ID(A)
10 10 125°C

VGS=3V 25°C

0 0
0 1 2 3 4 5 1 2 3 4 5

VDS (Volts) VGS(Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

130 3.2

Normalized On-Resistance 2.8

110 VGS=10V
2.4 ID=18A
RDS(ON) (mΩ)

VGS=5V

90 2

1.6
VGS=5V
70 VGS=10V ID=16A
1.2

50 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200

ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

220 1.0E+02
ID=18A
200 1.0E+01

180
125°C 1.0E+00
RDS(ON) (mΩ)

160
IS (A)

1.0E-01 125°C
140
1.0E-02
120
1.0E-03 25°C
100

80 1.0E-04
25°C
60 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2500
VDS=100V
ID=18A
8 2000
Ciss

Capacitance (pF)
VGS (Volts)

6 1500

4 1000

2 500 Coss
Crss

0 0
0 5 10 15 20 25 30 0 20 40 60 80 100

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 500
10µs TJ(Max)=175°C
TC=25°C
10µs 400
10.0
100µs
RDS(ON)
limited
Power (W)

300
ID (Amps)

1ms
1.0
10ms
DC 200

0.1
TJ(Max)=175°C 100
TC=25°C

0.0 0
0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000
VDS (Volts)
VGS> or equal to 5V
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=1.5°C/W
1

0.1 PD
Single Pulse

Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 120
IAR (A) Peak Avalanche Current

100

Power Dissipation (W)

80
TA=25°C TA=100°C
10 60
TA=150°C
40
TA=125°C
20

1 0
1 10 100 0 25 50 75 100 125 150 175
Time in avalanche, tA (µs) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

20 10000

TA=25
°C
15 1000
Current rating ID(A)

Power (W)

10 100

5 10

0 1
0 25 50 75 100 125 150 175 1E-05 0.001 0.1 10 1000

TCASE (°C) Pulse Width (s)

Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
ZθJA Normalized Transient

D=Ton/T In descending order

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Thermal Resistance

1 RθJA=50°C/W

0.1

PD
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev.1.0: August 2014 www.aosmd.com Page 5 of 6

 Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.1.0: August 2014 www.aosmd.com Page 6 of 6