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com

AOD403/AOI403
30V P-Channel MOSFET

General Description Product Summary

The AOD403/AOI403 uses advanced trench technology to VDS -30V

provide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70A
resistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V) < 6.2mΩ (< 6.7mΩ∗)
DPAK/IPAK package, this device is well suited for high
RDS(ON) (at VGS = -10V) < 8mΩ (< 8.5mΩ∗)
current load applications.

100% UIS Tested

100% Rg Tested

TO252 TO251A
DPAK IPAK
D
Top View Bottom View Top View Bottom View

D
D

G
S G G
S S
D D
G S S
G

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TC=25°C -70
ID
Current G TC=100°C -55 A
Pulsed Drain Current C IDM -200
Continuous Drain TA=25°C -15
IDSM A
Current TA=70°C -12
C
Avalanche Current IAS, IAR -50 A
Avalanche energy L=0.1mH C EAS, EAR 125 mJ
TC=25°C 90
PD W
Power Dissipation B TC=100°C 45
TA=25°C 2.5
PDSM W
Power Dissipation A TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 16 20 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 41 50 °C/W
Maximum Junction-to-Case Steady-State RθJC 0.9 1.6 °C/W

* package TO251A

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±25V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 -2.5 -3.5 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -200 A
VGS=-20V, ID=-20A 5.1 6.2
mΩ
TO252 TJ=125°C 7.6 9.2
VGS=-10V, ID=-20A
TO252 6.2 8 mΩ
RDS(ON) Static Drain-Source On-Resistance
VGS=-20V, ID=-20A
TO251A 5.6 6.7 mΩ

VGS=-10V, ID=-20A
TO251A 6.7 8.5 mΩ

gFS Forward Transconductance VDS=-5V, ID=-20A 42 S

VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 -1 V
IS Maximum Body-Diode Continuous CurrentG -70 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2310 2890 3500 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 410 585 760 pF
Crss Reverse Transfer Capacitance 280 470 660 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.9 3.8 5.7 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 40 51 61 nC
Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-20A 10 12 14 nC
Qgd Gate Drain Charge 10 16 22 nC
tD(on) Turn-On DelayTime 16 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=0.75Ω, 12 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 45 ns
tf Turn-Off Fall Time 22 ns
trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs 14 18 22 ns
Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 9 11 13 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOD403/AOI403
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
-10V VDS=-5V
-6V
80 80
-5V

60 60
-ID (A)

-ID(A)
40 -4.5V 40 125°C

20 20 25°C

VGS=-4V
0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

10 1.8
VGS=-20V
Normalized On-Resistance

1.6 ID=-20A
8
VGS=-10V
Ω)
RDS(ON) (mΩ

1.4
17
6
5
1.2 2
VGS=-10V
10
4 VGS=-20V ID=-20A
1

2 0.8
0 5 10
15 20 25 30 0 25 50 75 100 125 150 175 200
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Temperature (°C) 0
Gate Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

20 1.0E+02
ID=-20A
1.0E+01
15 40
1.0E+00
125°C
Ω)

125°C
RDS(ON) (mΩ

1.0E-01
-IS (A)

10 25°C
1.0E-02

1.0E-03
5 25°C
1.0E-04

0 1.0E-05
0 5 10 15 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 5000
VDS=-15V
ID=-20A
8 4000
Ciss

Capacitance (pF)
-VGS (Volts)

6 3000

4 2000
Coss

2 1000

Crss
0 0
0 10 20 30 40 50 60 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 400
TJ(Max)=175°C
TC=25°C
100.0 RDS(ON) 10µs 10µs 320
limited
100µs
-ID (Amps)

Power (W)

10.0 DC 240
1ms
10ms
1.0 160

0.1 TJ(Max)=175°C 80
TC=25°C
0.0
0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F)
Case (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=1.6°C/W 40
1

0.1 PD

Single Pulse
Ton
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000.0 150
-IAR (A) Peak Avalanche Current

120

Power Dissipation (W)

TA=25°C
TA=100°C 90

100.0
TA=150°C 60

30

TA=125°C
0
10.0
0 25 50 75 100 125 150 175
1 10 100 1000

Time in avalanche, tA (ms) TCASE (°C)

Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

80 10000

70 TA=25°C
1000
60
Current rating ID(A)

Power (W)

50
100
40

30
10
20

10
1
0 0.00001 0.001 0.1 10 1000
0 25 50 75 100 125 150 175 Pulse Width (s) 0
°C)
TCASE (° 18
Figure 15: Single Pulse Power Rating Junction-to-
Figure 14: Current De-rating (Note F) Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=50°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L E AR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Rev.9.0: July 2013 www.aosmd.com Page 6 of 6