AOT410L/AOB410L

100V N-Channel MOSFET

TM
SDMOS

General Description Product Summary

TM
The AOT410L/AOB410L is fabricated with SDMOS VDS 100V
trench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150A
gate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗)
with controlled switching behavior. This universal RDS(ON) (at VGS= 7V) < 7.5mΩ (< 7.2mΩ∗)
technology is well suited for PWM, load switching and
general purpose applications.
100% UIS Tested
100% Rg Tested

TO-263
TO-220
D2PAK
Top View Bottom View Top View Bottom View D

D
D
D
D

G G
SD S G
S S
D G S
G
AOT410L AOB410L

Orderable Part Number Package Type Form Minimum Order Quantity

AOT410L TO-220 Tube 1000
AOB410L TO-263 Tape & Reel 800

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TC=25°C 150
ID
Current G TC=100°C 108 A
C
Pulsed Drain Current IDM 405
Continuous Drain TA=25°C 12
IDSM A
Current TA=70°C 10
C
Avalanche Current IAS,IAR 50 A
Avalanche energy L=0.1mH C EAS,EAR 125 mJ
TC=25°C 333
PD W
Power Dissipation B TC=100°C 167
TA=25°C 1.9
A
PDSM W
Power Dissipation TA=70°C 1.2
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 12 15 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 54 65 °C/W
Maximum Junction-to-Case Steady-State RθJC 0.35 0.45 °C/W
* Surface mount package TO263

Rev.3.0: November 2013 www.aosmd.com Page 1 of 7

 AOT410L/AOB410L

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 V
VDS=100V, VGS=0V 10
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 50
IGSS Gate-Body leakage current VDS=0V, VGS=±25V ±100 nA
VGS(th) Gate Threshold Voltage VDS=5V ,ID=250µA 2 3 4 V
ID(ON) On state drain current VGS=10V, VDS=5V 405 A
VGS=10V, ID=20A 5.1 6.5
mΩ
T0220 TJ=125°C 8.8 11
VGS=7V, ID=20A
RDS(ON) T0220 5.8 7.5 mΩ
Static Drain-Source On-Resistance
VGS=10V, ID=20A
mΩ
TO263 4.8 6.2
VGS=7V, ID=20A
TO263 5.5 7.2 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 70 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.63 1 V
IS Maximum Body-Diode Continuous Current 150 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 5290 6622 7950 pF
Coss Output Capacitance VGS=0V, VDS=50V, f=1MHz 415 594 770 pF
Crss Reverse Transfer Capacitance 130 215 300 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.3 0.64 1 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 85 107 129 nC
Qgs Gate Source Charge VGS=10V, VDS=50V, ID=20A 23 28.5 34 nC
Qgd Gate Drain Charge 24 40 56 nC
tD(on) Turn-On DelayTime 28 ns
tr Turn-On Rise Time VGS=10V, VDS=50V, RL=2.5Ω, 22 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 43.5 ns
tf Turn-Off Fall Time 14.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 19 27 35 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 124 177 230 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.3.0: November 2013 www.aosmd.com Page 2 of 7

 AOT410L/AOB410L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

150 180
10V
VDS=5V
6.5V 6V 150
120
7V
120
90
ID (A)

ID(A)
90
60 5.5V
60
125°C
30
30 25°C
VGS=5V

0 0
0 1 2 3 4 5 3 4 5 6 7
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

8 2.4

2.2
7 Normalized On-Resistance
VGS=10V
2 ID=20A
Ω)

VGS=7V 1.8
RDS(ON) (mΩ

6
17
1.6 5
5 2
1.4
VGS=7V
10
1.2 ID=20A
4 VGS=10V
1
3 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A) 0
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) 18 Temperature
Figure 4: On-Resistance vs. Junction
(Note E)

12 1.0E+02
ID=20A
1.0E+01
10 40
125°C
1.0E+00
Ω)
RDS(ON) (mΩ

IS (A)

8 1.0E-01 125°C

1.0E-02 25°C
6 25°C
1.0E-03

4 1.0E-04
5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev.3.0: November 2013 www.aosmd.com Page 3 of 7

 AOT410L/AOB410L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 10000
VDS=50V
ID=20A
8 8000
Ciss

Capacitance (pF)
VGS (Volts)

6 6000

4 4000
Coss
2 2000 Crss

0 0
0 20 40 60 80 100 120 0 10 20 30 40 50 60
Qg (nC)
Figure 7: Gate-Charge Characteristics VDS (Volts)
Figure 8: Capacitance Characteristics

1000.0 5000
10µs
100.0 RDS(ON) 10µs 4000 TJ(Max)=175°C
limited 100µs
TC=25°C
1ms
ID (Amps)

17
Power (W)

10.0 3000
10ms
DC
5
1.0 2000 2
TJ(Max)=175°C 10
0.1 TC=25°C
1000

0.0 0
0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1
VDS (Volts) 01 10
Pulse Width (s)
Figure 9: Maximum Forward Biased 18
Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

40
Thermal Resistance

1 RθJC=0.45°C/W

0.1
Single Pulse PD

0.01
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev.3.0: November 2013 www.aosmd.com Page 4 of 7

 AOT410L/AOB410L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000.0 350
IAR (A) Peak Avalanche Current

300

Power Dissipation (W)

TA=25°C TA=100°C
250
100.0
200
TA=150°C
150
TA=125°C
10.0
100

50

1.0 0
1 10 100 1000 0 25 50 75 100 125 150 175
µs)
Time in avalanche, tA (µ TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note C) Figure 13: Power De-rating (Note F)

160 1000

TA=25°C
120
Current rating ID(A)

100
Power (W)

17
5
80
2
10 10
40

1
0 0.0001 0.01 1 100 10000
0 25 50 75 100 125 150 175 0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=65°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev.3.0: November 2013 www.aosmd.com Page 5 of 7

 AOT410L/AOB410L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

320 40 40 5
di/dt=800A/µs 125ºC
280 35 35 di/dt=800A/µs 4
25ºC
240 30 30 trr 3
Qrr (nC)

Qrr

trr (ns)
Irm (A)
200 25 25 2

S
25ºC 125ºC
160 125ºC 20 20 25ºC 1
S
120 Irm 15 15 125ºC 0
25ºC
80 10 10 -1
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IS (A) IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak Figure 18: Diode Reverse Recovery Time and
Current vs. Conduction Current Softness Factor vs. Conduction Current

280 40 50 2
Is=20A 125ºC Is=20A
240
40
30 125ºC 1.5
200
30
Qrr (nC)

160
trr (ns)

trr
Irm (A)

25ºC 25ºC 1
20

S
120 Qrr 20
125ºC
80 25ºC
10 0.5
10 S
40 Irm 25ºC 125ºC
0 0 0 0
0 500 1000 0 200 400 600 800 1000
µs)
di/dt (A/µ µs)
di/dt (A/µ
Figure 19: Diode Reverse Recovery Charge and Figure 20: Diode Reverse Recovery Time and
Peak Current vs. di/dt Softness Factor vs. di/dt

Rev.3.0: November 2013 www.aosmd.com Page 6 of 7

 AOT410L/AOB410L

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & W aveforms

L 2
Vds E AR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & W aveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.3.0: November 2013 www.aosmd.com Page 7 of 7