AOT2606L/AOB2606L/AOTF2606L

60V N-Channel MOSFET

General Description Product Summary

The AOT2606L & AOB2606L & AOTF2606L uses Trench VDS 60V
MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A
the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗)
Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON),
Ciss and Coss. This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom,
industrial power supplies and LED backlighting.
100% UIS Tested
100% Rg Tested

Top View
TO-263 D
TO-220 TO-220F D2PAK
D

S S S S
D D
G G G
AOT2606L AOTF2606L AOB2606L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol AOT2606L/AOB2606L AOTF2606L Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 72 54
ID
Current G TC=100°C 56 38 A
C
Pulsed Drain Current IDM 260
Continuous Drain TA=25°C 13
IDSM A
Current TA=70°C 10
Avalanche Current C IAS 60 A
Avalanche energy L=0.1mH C EAS 180 mJ
TC=25°C 115 36.5
PD W
Power Dissipation B TC=100°C 57.5 18
TA=25°C 2.1
PDSM W
Power Dissipation A TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol AOT2606L/AOB2606L AOTF2606L Units
Maximum Junction-to-Ambient A t ≤ 10s 15 15 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 60 60 °C/W
Maximum Junction-to-Case Steady-State RθJC 1.3 4.1 °C/W

* Surface mount package TO263

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 AOT2606L/AOB2606L/AOTF2606L

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 V
VDS=60V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 2.5 3 3.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 260 A
VGS=10V, ID=20A 5.4 6.5
mΩ
TO220/TO220F TJ=125°C 8.5 10.5
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
5.1 6.2 mΩ
TO263
gFS Forward Transconductance VDS=5V, ID=20A 75 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current G 72 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 4050 pF
Coss Output Capacitance VGS=0V, VDS=30V, f=1MHz 345 pF
Crss Reverse Transfer Capacitance 16.8 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.3 0.65 1.0 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 53 75 nC
Qg(4.5V) Total Gate Charge 22 31 nC
VGS=10V, VDS=30V, ID=20A
Qgs Gate Source Charge 17 nC
Qgd Gate Drain Charge 5 nC
tD(on) Turn-On DelayTime 18 ns
tr Turn-On Rise Time VGS=10V, VDS=30V, RL=1.5Ω, 20 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 33 ns
tf Turn-Off Fall Time 4 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 26 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 125 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOT2606L/AOB2606L/AOTF2606L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120 100
10V 6V VDS=5V
100
80
5V
80
60
ID (A)

ID(A)
60
40 125°C
40
4.5V
20 25°C
20
Vgs=4V
0 0
0 1 2 3 4 5 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

10 2

Normalized On-Resistance
8 1.8

VGS=10V 1.6 VGS=10V

Ω)
RDS(ON) (mΩ

6 ID=20A
17
1.4 5
4 2
1.2
10
2
1

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A) 0
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) 18Temperature
Figure 4: On-Resistance vs. Junction
(Note E)

14 1.0E+02
ID=20A
12 1.0E+01
40
1.0E+00
10
Ω)

125°C
RDS(ON) (mΩ

1.0E-01
IS (A)

8
125°C
1.0E-02
6 25°C
1.0E-03

4 25°C 1.0E-04

2 1.0E-05

2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AOT2606L/AOB2606L/AOTF2606L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 5000
VDS=30V
ID=20A Ciss

8 4000

Capacitance (pF)
VGS (Volts)

6 3000

4 2000
Coss

2 1000

Crss
0 0
0 10 2030 40 50 60 0 10 20 30 40 50 60
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 1000
TJ(Max)=175°C
10µs TC=25°C
100.0 10µs 800
RDS(ON) 100µs
ID (Amps)

Power (W)

10.0
1ms 600 17
10ms 5
1.0 DC 400 2
TJ(Max)=175°C 10
TC=25°C
0.1 200

0.0 0
0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Operating 18
Figure 10: Single Pulse Power Rating Junction-to-Case
Area for AOT2606L and AOB2606L (Note F)
for AOT2606L and AOB2606L (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

1 RθJC=1.3°C/W 40

0.1

PD
Single Pulse
0.01
Ton
T

0.001
1E-05 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2606L and AOB2606L (Note F)

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 AOT2606L/AOB2606L/AOTF2606L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000.0 1000
TJ(Max)=175°C
10µs TC=25°C
100.0 800
RDS(ON)
100µs
ID (Amps)

Power (W)
10.0 1ms 600
10ms
1.0 400
DC
TJ(Max)=175°C
0.1
TC=25°C
200

0.0 0
0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100
VDS (Volts)
Pulse Width (s) 17
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-Case
5
Safe Operating Area for AOTF2606L for AOTF2606L (Note F)
2
10
10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

1 RθJC=4.1°C/W

0
0.1 18

Single Pulse PD
0.01
Ton
T
0.001
40
1E-05 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2606L (Note F)

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 AOT2606L/AOB2606L/AOTF2606L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000 150
IAR (A) Peak Avalanche Current

Power Dissipation (W)

TA=25°C 100
TA=100°C
100
TA=150°C
50

TA=125°C

10 0
1 10 100 1000 0 25 50 75 100 125 150 175
µs)
Time in avalanche, tA (µ °C)
TCASE (°
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating for AOT2606L and
(Note C) AOB2606L (Note F)

80 10000

TA=25°C
60 1000
Current rating ID(A)

17
Power (W)

5
40 100
2
10
20 10

0 1
0 25 50 75 100 125 150 175 1E-05 0.001 0.1 10 0 1000
°C)
TCASE (° Pulse Width (s) 18
Figure 14: Current De-rating for AOT2606L and Figure 15: Single Pulse Power Rating Junction-to-
AOB2606L (Note F) Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=60°C/W 40

0.1

PD
0.01 Single Pulse
Ton
T
0.001
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AOT2606L/AOB2606L/AOTF2606L

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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