AOT474/AOTF474

N-Channel Enhancement Mode

Field Effect Transistor
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General Description Product Summary

The AOT(F)474/L uses a robust technology that is VDS 75V

designed to provide efficient and reliable power 127A
ID_TO220 (at V GS=10V)
conversion even in the most demanding applications,
including motor control. With low R DS(ON) and excellent ID_TO220FL (at VGS=10V) 47A
thermal capability this device is appropriate for high RDS(ON) (at VGS=10V) < 11.3mΩ
current switching and can endure adverse operating
conditions.

AOT(F)474/AOT(F)474L are electrically Identical 100% UIS Tested

AOT(F)474 -RoHS Compliant

AOT(F)474L -Halogen Free

TO220FL
TO220
Top View Bottom View
Top View Bottom View D
D

G S G
S G
D D D D
G S G S
S
AOT474 AOTF474
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol AOT474 AOTF474 Units
Drain-Source Voltage VDS 75 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TC=25°C 127 47
ID
Current TC=100°C 89 33 A
C
Pulsed Drain Current IDM 200
Continuous Drain TA=25°C 9 9
IDSM A
Current TA=70°C 7 7
C
Avalanche Current IAR 106 A
C
Repetitive avalanche energy L=0.1mH EAR 562 mJ
TC=25°C 417 57.5
B
PD W
Power Dissipation TC=100°C 208 29
TA=25°C 1.9 1.9
A
PDSM W
Power Dissipation TA=70°C 1.2 1.2
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol AOT474 AOTF474 Units
A
Maximum Junction-to-Ambient t ≤ 10s 13.9 13.9 °C/W
AD RθJA
Maximum Junction-to-Ambient Steady-State 65 65 °C/W
Maximum Junction-to-Case Steady-State RθJC 0.36 2.6 °C/W

Rev 0: February 2009 www.aosmd.com Page 1 of 7

 AOT474/AOTF474

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
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BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 75 V
VDS=75V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±25V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.6 3.4 4 V
ID(ON) On state drain current VGS=10V, VDS=5V 200 A
VGS=10V, ID=30A 9.4 11.3
RDS(ON) Static Drain-Source On-Resistance mΩ
TJ=125°C 18 21.5
gFS Forward Transconductance VDS=5V, ID=30A 67 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.73 1 V
IS Maximum Body-Diode Continuous Current 128 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2240 2805 3370 pF
Coss Output Capacitance VGS=0V, VDS=30V, f=1MHz 355 507 660 pF
Crss Reverse Transfer Capacitance 22 36 50 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.4 2.8 4.2 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 39 49.6 60 nC
Qgs Gate Source Charge VGS=10V, VDS=30V, ID=30A 11 13.8 17 nC
Qgd Gate Drain Charge 8 14 20 nC
tD(on) Turn-On DelayTime 15 ns
tr Turn-On Rise Time VGS=10V, VDS=30V, RL=1Ω, 34 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 42 ns
tf Turn-Off Fall Time 4.5 ns
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=500A/µs 35 50 65 ns
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs 330 472 614 nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Rev 0:February 2009

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0: February 2009 www.aosmd.com Page 2 of 7

 AOT474/AOTF474

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

150 105
10V
VDS=5V
90
www.datasheet4u.com120 8V 6V
75
90 60 -40°C
ID (A)

ID(A)
5.5V
45 125°C
60

5V 30
25°C
30
15
VGS=4.5V
0 0
0 2 4 6 8 10 3 3.5 4 4.5 5 5.5 6 6.5 7
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

13 2.5

12 Normalized On-Resistance
2.0 VGS=10V
11 ID=30A
VGS=10V
RDS(ON) (mΩ)

10 1.5
17
9
5
1.0
2
8 10
0.5
7

6 0.0
0 20 40 60 80 100 -50 -25 0 25 50 75 100 125 150 175 200
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)

30 1.0E+02
ID=30A
25 1.0E+01
40
1.0E+00
20
RDS(ON) (mΩ)

1.0E-01 125°C
IS (A)

-40°C
15 125°C
1.0E-02
10
1.0E-03
25°C
5 25°C
1.0E-04

0 1.0E-05
4 8 12 16 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 0: February 2009 www.aosmd.com Page 3 of 7

 AOT474/AOTF474

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 5000

VDS=30V
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8 4000
ID=30A
Ciss

Capacitance (pF)
VGS (Volts)

6 3000

4 2000
Coss

2 1000

Crss
0 0
0 10 20 30 40 50 0 10 20 30 40 50 60
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

200
IAR (A) Peak Avalanche Current

150
TA=25°C
TA=100°C
100

TA=150°C
50

TA=125°C

0
0.000001 0.00001 0.0001 0.001
Time in avalanche, tA (s)
Figure 9: Single Pulse Avalanche capability (Note
C)

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 AOT474/AOTF474

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10000 10000
TJ(Max)=175°C TJ(Max)=175°C
8000
www.datasheet4u.com TC=25°C 8000 TC=25°C
Power (W)

Power (W)
6000 6000

4000 4000

2000 2000

0 0
1E-05 0.0001 0.001 0.01 0.1 1 10 1E-05 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to- Figure 11: Single Pulse Power Rating Junction-to-
Case for AOT474 (Note F) Case for AOTF474 (Note F)

10000 10000
TA=25°C TA=25°C

1000 1000
Power (W)

Power (W)

100 100

10 10

1 1
0.001 0.1 10 1000 0.001 0.1 10 1000
Pulse Width (s) Pulse Width (s)
Figure 12: Single Pulse Power Rating Junction-to- Figure 13: Single Pulse Power Rating Junction-to-
Ambient for AOT474 (NoteG) Ambient for AOTF474 (Note G)

1000.0 1000.0

10µs 100.0 10µs

100.0
RDS(ON) 100µs RDS(ON) 100µs
limited limited
ID (Amps)
ID (Amps)

10.0 10.0 1ms

1ms
DC 10ms
1.0 10ms 1.0 DC

TJ(Max)=175°C TJ(Max)=175°C
0.1 TC=25°C 0.1
TC=25°C

0.0 0.0
0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000
VDS (Volts) VDS (Volts)
Figure 14: Maximum Forward Biased Figure 15: Maximum Forward Biased
Safe Operating Area for AOT474 (Note F) Safe Operating Area for AOTF474 (Note
F)

Rev 0: February 2009 www.aosmd.com Page 5 of 7

 AOT474/AOTF474

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

www.datasheet4u.com 1 RθJC=0.36°C/W

0.1

PD
0.01
Ton
T
Single Pulse
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOT474 (Note F)

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJC=2.6°C/W

0.1

PD
0.01
Single Pulse Ton
T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF474 (Note F)

Rev 0: February 2009 www.aosmd.com Page 6 of 7

 AOT474/AOTF474

Gate Charge Test Circuit & Waveform

www.datasheet4u.com Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 0: February 2009 www.aosmd.com Page 7 of 7