AOD458

250V,14A N-Channel MOSFET

General Description Product Summary

The AOD458 has been fabricated using an advanced high

voltage MOSFET process that is designed to deliver high VDS 300V@150℃
levels of performance and robustness in popular AC -DC ID (at VGS=10V) 14A
applications.By providing low RDS(on), Ciss and Crss along
RDS(ON) (at VGS=10V) <0.28Ω
with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.

100% UIS Tested!

100% Rg Tested!

TO252
DPAK
D
Top View Bottom View

D
D

G G
S
S
S
G

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 250 V
Gate-Source Voltage VGS ±30 V
Continuous Drain TC=25°C 14
B ID
Current TC=100°C 10 A
C
Pulsed Drain Current IDM 32
C
Avalanche Current IAR 3.4 A
C
Repetitive avalanche energy EAR 173 mJ
H
Single pulsed avalanche energy EAS 346 mJ
Peak diode recovery dv/dt dv/dt 5 V/ns
TC=25°C 150 W
PD
Power Dissipation B Derate above 25 oC 1 W/ C
o

Junction and Storage Temperature Range TJ, TSTG -50 to 175 °C

Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds TL 300 °C

Thermal Characteristics
Parameter Symbol Typical Maximum Units
A,G
Maximum Junction-to-Ambient RθJA 45 55 °C/W
A
Maximum Case-to-sink RθCS - 0.5 °C/W
Maximum Junction-to-Case D,F RθJC 0.7 1 °C/W

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 AOD458

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C 250
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=150°C 300 V
BVDSS o
Zero Gate Voltage Drain Current ID=250µA, VGS=0V 0.27 V/ C
/∆TJ
VDS=250V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
VDS=200V, TJ=125°C 10
IGSS Gate-Body leakage current VDS=0V, VGS=±30V ±100 nΑ
VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA 3 3.8 4.5 V
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A 0.22 0.28 Ω
gFS Forward Transconductance VDS=40V, ID=7A 10 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 14 A
ISM Maximum Body-Diode Pulsed Current 32 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 505 637 770 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 70 104 140 pF
Crss Reverse Transfer Capacitance 3 7.1 12 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.3 2.6 3.9 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 9 12 15 nC
Qgs Gate Source Charge VGS=10V, VDS=200V, ID=14A 3.8 nC
Qgd Gate Drain Charge 4.6 nC
tD(on) Turn-On DelayTime 21 ns
tr Turn-On Rise Time VGS=10V, VDS=125V, ID=14A, 58 ns
tD(off) Turn-Off DelayTime RG=25Ω 29 ns
tf Turn-Off Fall Time 33 ns
trr Body Diode Reverse Recovery Time IF=14A,dI/dt=100A/µs,VDS=100V 120 150 180 ns
Qrr Body Diode Reverse Recovery Charge IF=14A,dI/dt=100A/µs,VDS=100V 1 1.24 1.5 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=175°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal imped ance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
H. L=60mH, IAS=3.4A, VDD=150V, RG=10Ω, Starting T J=25°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOD458

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 100
-55°C
VDS=40V
20
10V
10
15
ID (A)

ID(A)
125°C
6.5V
10
1
6V
5
25°C
VGS=5.5V
0 0.1
0 5 10 15 20 25 30 2 3 4 5 6 7 8 9 10

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

1.2 3

1.0 2.5
VGS=10V
Normalized On-Resistance

ID=7A
0.8 VGS=10V 2
RDS(ON) (Ω)

0.6
1.5

0.4
1

0.2
0.5
0.0
0 5 10 15 20 25 30 0
ID (A) -100 -50 0 50 100 150 200
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

1.2 1.0E+02
ID=30A
1.0E+01
1.1 40
BVDSS (Normalized)

125°C
1.0E+00
IS (A)

1 25°C
125°C 1.0E-01

1.0E-02
0.9
25°C
1.0E-03

0.8 1.0E-04
-100 -50 0 50 100 150 200 0.2 0.4 0.6 0.8 1.0
TJ (oC) VSD (Volts)
Figure 5: Break Down vs. Junction Temperature Figure 6: Body-Diode Characteristics

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 AOD458

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 10000

Ciss
VDS=200V
12
ID=14A 1000

Capacitance (pF)
Coss
VGS (Volts)

9
100
6
Crss
10
3

0 1
0 4 8 12 16 20 0.1 1 10 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 800

10µs
10 RDS(ON) TJ(Max)=175°C
600
limited TC=25°C
100µs
Power (W)
ID (Amps)

1 1ms 400
10ms
DC
0.1 200
TJ(Max)=175°C
TC=25°C
0.01 0
1 10 100 1000 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

1 RθJC=1°C/W

0.1

PD
0.01
Single Pulse Ton
T
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AOD458

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

180 15

150
12
Power Dissipation (W)

Current rating ID(A)

120
9
90
6
60

30 3

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TCASE (°C) TCASE (°C)
Figure 12: Power De-rating (Note B) Figure 13: Current De-rating (Note B)

400

300 TA=25°C
Power (W)

200

100

0
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=55°C/W
ZθJA Normalized Transient
Thermal Resistance

0.1

0.01
PD

0.001 Ton
Single Pulse T

0.0001
0.0001 0.001 0.01 0.1 1 10 100 1000 10000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)

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 AOD458

Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs
Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ Vdd IRM
Vgs VDC
Vdd
Ig
- Vds

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