AOT42S60L/AOB42S60L

600V 37A α MOS TM Power Transistor

General Description Product Summary

The AOT42S60L & AOB42S60L have been fabricated VDS @ Tj,max 700V
using the advanced αMOS high voltage process that is
TM
IDM 166A
designed to deliver high levels of performance and RDS(ON),max 0.109Ω
robustness in switching applications. Qg,typ 40nC
By providing low RDS(on), Qg and EOSS along with
Eoss @ 400V 9.2µJ
guaranteed avalanche capability these devices can be
adopted quickly into new and existing offline power supply
designs.
100% UIS Tested
100% Rg Tested

Top View
TO-220 TO-263
D
D2PAK
D D

G
S
D S
G S
G
AOT42S60L AOB42S60L

Orderable Part Number Package Type Form Minimum Order Quantity

AOT42S60L TO-220 Green Tube 1000
AOB42S60L TO-263 Green Tape & Reel 800

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol AOT42S60L/AOB42S60L Units
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
Continuous Drain TC=25°C 37
ID
Current TC=100°C 23 A
Pulsed Drain Current C IDM 166
Avalanche Current C IAR 11 A
Repetitive avalanche energy C EAR 234 mJ
G
Single pulsed avalanche energy EAS 1345 mJ
TC=25°C 417 W
PD
Power Dissipation B Derate above 25oC 3.3 W/ oC
MOSFET dv/dt ruggedness 100
dv/dt V/ns
Peak diode recovery dv/dt H 20
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J TL 300 °C
Thermal Characteristics
Parameter Symbol AOT42S60L/AOB42S60L Units
Maximum Junction-to-Ambient A,D RθJA 65 °C/W
Maximum Case-to-sink A RθCS 0.5 °C/W
Maximum Junction-to-Case RθJC 0.3 °C/W

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
ID=250µA, VGS=0V, TJ=25°C 600 - -
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=150°C 650 700 - V
VDS=600V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
VDS=480V, TJ=150°C - 10 -
IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 nΑ
VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.5 3.2 3.8 V
VGS=10V, ID=21A, TJ=25°C - 0.095 0.109 Ω
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=21A, TJ=150°C - 0.27 0.31 Ω
VSD Diode Forward Voltage IS=21A,VGS=0V, TJ=25°C - 0.84 - V
IS Maximum Body-Diode Continuous Current - - 37 A
ISM Maximum Body-Diode Pulsed Current - - 166 A
DYNAMIC PARAMETERS
Ciss Input Capacitance - 2154 - pF
VGS=0V, VDS=100V, f=1MHz
Coss Output Capacitance - 135 - pF
Effective output capacitance, energy
Co(er) - 103 - pF
related H
VGS=0V, VDS=0 to 480V, f=1MHz
Effective output capacitance, time
Co(tr) - 344 - pF
related I
Crss Reverse Transfer Capacitance VGS=0V, VDS=100V, f=1MHz - 2.7 - pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz - 1.7 - Ω
SWITCHING PARAMETERS
Qg Total Gate Charge - 40 - nC
Qgs Gate Source Charge VGS=10V, VDS=480V, ID=21A - 11.7 - nC
Qgd Gate Drain Charge - 11.9 - nC
tD(on) Turn-On DelayTime - 38.5 - ns
tr Turn-On Rise Time VGS=10V, VDS=400V, ID=21A, - 53 - ns
tD(off) Turn-Off DelayTime RG=25Ω - 136 - ns
tf Turn-Off Fall Time - 46 - ns
trr Body Diode Reverse Recovery Time IF=21A,dI/dt=100A/µs,VDS=400V - 473 - ns
Irm Peak Reverse Recovery Current IF=21A,dI/dt=100A/µs,VDS=400V - 38.5 - A
Qrr Body Diode Reverse Recovery Charge IF=21A,dI/dt=100A/µs,VDS=400V - 10.5 - µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=6.7A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 60
10V
70 10V 7V 50
60 6V
40 7V
50 6V
5.5V

ID (A)
ID (A)

40 30
5.5V
30 5V
20
20
5V 10
10 VGS=4.5V
VGS=4.5V
0 0
0 5 10 15 20 0 5 10 15 20
VDS (Volts) VDS (Volts)
Figure 1: On-Region Characteristics@25°C Figure 2: On-Region Characteristics@125°C

1000 0.30
VDS=20V -55°C
0.25
100

125°C 0.20
RDS(ON) (Ω)

10 VGS=10V
ID(A)

0.15
1
25°C 0.10

0.1
0.05

0.01 0.00
2 3 4 5 6 7 8 9 10 0 15 30 45 60 75 90

VGS(Volts) ID (A)
Figure 3: Transfer Characteristics Figure 4: On-Resistance vs. Drain Current and Gate
Voltage

3 1.2
Normalized On-Resistance

2.5
VGS=10V 1.1
BVDSS (Normalized)

2 ID=21A

1.5 1

1
0.9
0.5

0 0.8
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200

Temperature (°C) TJ (oC)

Figure 5: On-Resistance vs. Junction Temperature Figure 6: Break Down vs. Junction Temperature

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02 15

1.0E+01
12
1.0E+00 VDS=480V
125°C
ID=21A
1.0E-01 25°C 9

VGS (Volts)
IS (A)

1.0E-02
6
1.0E-03

1.0E-04 3

1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 0
0 15 30 45 60
VSD (Volts) Qg (nC)
Figure 7: Body-Diode Characteristics (Note E) Figure 8: Gate-Charge Characteristics

10000 20
Ciss
16
1000
Eoss(uJ)

Eoss
Capacitance (pF)

12
Coss
100
8

10 Crss
4

1 0
0 100 200 300 400 500 600 0 100 200 300 400 500 600

VDS (Volts) VDS (Volts)

Figure 9: Capacitance Characteristics Figure 10: Coss stored Energy

1000

100 10µs
RDS(ON)
limited 100µs
ID (Amps)

10
1ms

1 DC 10ms

0.1 TJ(Max)=150°C
TC=25°C

0.01
0.1 1 10 100 1000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)42S60L(Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1500 40

35
1200
30

Current rating ID(A)

EAS(mJ)

900 25

20
600 15

10
300
5

0 0
25 50 75 100 125 150 175 0 25 50 75 100 125 150

TCASE (°C) TCASE (°C)

Figure 12: Avalanche energy Figure 13: Current De-rating (Note B)

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=0.3°C/W
1

0.1
PD
PD

0.01 TonT
on
T T
Single Pulse
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

Figure 14: Normalized Maximum Transient Thermal Impedance for AOT(B)42S60L(Note F)

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 Gate Charge Test Circuit & Waveform

Vgs
Qg

+ 10V
VDC
+ Qgs Qgd
- VDC Vds
DUT -
Vgs
Ig

Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+
Vgs VDC Vdd
Rg -
10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LI AR BVDSS

Id Vds

Vgs +
Vgs VDC Vdd I AR
Rg - Id

DUT
Vgs Vgs

Diode Recovery Tes t Circuit & Waveforms

Vds + Qrr = - Idt

DUT
Vgs

Vds - L Isd IF trr

Isd dI/dt
+ Vdd IRM
Vgs VDC
Vdd
Ig
- Vds

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