CEP02N6/CEB02N6

CEI02N6/CEF02N6
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
Type VDSS RDS(ON) ID @VGS
CEP02N6 600V 5Ω 2A 10V
CEB02N6 600V 5Ω 2A 10V
CEI02N6 600V 5Ω 2A 10V
CEF02N6 600V 5Ω 2A e 10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

D G

G G G
G D D D
S S S S
S
CEB SERIES CEI SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-262(I2-PAK) TO-220 TO-220F

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Limit
Parameter Symbol Units
TO-220/263/262 TO-220F
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
e
Drain Current-Continuous ID 2 2 A
a f e
Drain Current-Pulsed IDM 6 6 A
Maximum Power Dissipation @ TC = 25 C 60 29 W
PD
- Derate above 25 C 0.48 0.23 W/ C
Single Pulsed Avalanche Energy d EAS 125 125 mJ
Repetitive Avalanche Current a IAR 2 2 A
a
Repetitive Avalanche Energy EAR 5.4 5.4 mJ
Operating and Store Temperature Range TJ,Tstg -55 to 150 C

Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case RθJC 2.1 4.3 C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W

2002.September http://www.cetsemi.com
4-2
 CEP02N6/CEB02N6
CEI02N6/CEF02N6
Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Units 4

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 600 V
Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V 25 µA
Gate Body Leakage Current, Forward IGSSF VGS = 30V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -30V, VDS = 0V -100 nA
On Characteristics b
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2 4 V
Static Drain-Source
RDS(on) VGS = 10V, ID = 1A 3.8 5.0 Ω
On-Resistance
Forward Transconductance gFS VDS = 50V, ID = 1A 1.2 S
c
Dynamic Characteristics
Input Capacitance Ciss 250 pF
VDS = 25V, VGS = 0V,
Output Capacitance Coss f = 1.0 MHz 50 pF
Reverse Transfer Capacitance Crss 30 pF
Switching Characteristics c
Turn-On Delay Time td(on) 18 35 ns
Turn-On Rise Time tr VDD = 300V, ID = 2A, 18 35 ns
VGS = 10V, RGEN = 18Ω
Turn-Off Delay Time td(off) 50 90 ns
Turn-Off Fall Time tf 16 40 ns
Total Gate Charge Qg 20 25 nC
VDS = 480V, ID = 2A,
Gate-Source Charge Qgs VGS = 10V 2 nC
Gate-Drain Charge Qgd 12 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current IS g 2 A
b
Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 2A h 1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L =60mH, IAS =2.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C .
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package IS(max) = 1.5A .
h.Full package VSD test condition IS = 1.5A .

4-3
 CEP02N6/CEB02N6
CEI02N6/CEF02N6
3.0
VGS=10,9,8,7V
2.5
ID, Drain Current (A)

ID, Drain Current (A)

2.0 TJ=150 C
VGS=6V
0
10
1.5

1.0

VGS=5V -55 C
0.5 1.VDS=40V
25 C 2.Pulse Test
-1
0 10
0 2 4 6 8 10 12 2 4 6 8 10

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

600 2.2
ID=1A
RDS(ON), On-Resistance(Ohms)

VGS=10V
500 1.9
C, Capacitance (pF)

RDS(ON), Normalized

400 1.6

Ciss
300 1.3

200 1.0

Coss
100 0.7
Crss
0 0.4
0 5 10 15 20 25 -100 -50 0 50 100 150 200

VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation

with Temperature
1.3
VDS=VGS
Gate-Source Threshold Voltage

1 VGS=0V
10
IS, Source-drain current (A)

1.2 ID=250µA
VTH, Normalized

1.1

1.0
0
0.9 10

0.8

0.7
-1
0.6 10
-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2

TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage

with Temperature Variation with Source Current

4-4
 CEP02N6/CEB02N6
CEI02N6/CEF02N6
1
15 10
VGS, Gate to Source Voltage (V)

VDS=480V

12
ID=2A
10µs 4
RDS(ON)Limit

ID, Drain Current (A)

1ms
0 10ms
10
9 DC

6
-1
10

3
TC=25 C
TJ=150 C
Single Pulse
0 -2
10 0 1 2 3
0 6 12 18 24 10 10 10 10

Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge Figure 8. Maximum Safe

Operating Area

VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 9. Switching Test Circuit Figure 10. Switching Waveforms

Transient Thermal Impedance

0
10
r(t),Normalized Effective

D=0.5

0.2
0.1
-1 PDM
10
0.05
t1
t2
0.02
1. RθJC (t)=r (t) * RθJC
0.01 2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
-2 Single Pulse
10 4. Duty Cycle, D=t1/t2
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve

4-5