MITSUBISHI IGBT MODULES

CM300DX-24A
HIGH POWER SWITCHING USE

CM300DX-24A

¡IC ................................................................... 300A

¡VCES ......................................................... 1200V
¡Dual

¡Flatbase Type / Insulated Package /

Copper (non-plating) base plate
¡RoHS Directive compliant

APPLICATION
General purpose Inverters, Servo Amplifiers, Power supply, etc.

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

152
137
(7.4)

1.15
0.65
121.7
(13.5) (13.5) 1.2
110 ±0.5 (20.5)

(3.81)
99
17
94.5 4-M6 NUTS
(4.2)

7
0.8

TERMINAL t = 0.8
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
(14)
17
12

47 24 φ4.3
6

φ2.5
＊58.4

50 ±0.5
57.5
39

62
22

φ2.1
1.5
6
17
12

48 23
(14)

12.5

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

6.5 A (3)
4-φ5.5 MOUNTING HOLES
(21.14) 13 SECTION A
(102.25)
＊41.66
＊45.48

＊68.34
＊72.14
＊18.8
(7.75)
＊15

＊95
0

＊Pin positions
3.5

(5.4)
0

(SCREWING DEPTH)

with tolerance φ0.5

12.5

-0.5
17 +1

LABEL

E2(39) G2(38)

Tr2
E1C2
Tolerance otherwise specified
E2(47)
(24)
Division of Dimension Tolerance
Di2
0.5 to 3 ±0.2
C1(48) E1C2
Di1 (23) over 3 to 6 ±0.3

Tr1 over 6 to 30 ±0.5

Th
NTC over 30 to 120 ±0.8
G1(15) C1(22) over 120 to 400 ±1.2
TH1(1) TH2(2) E1(16)

CIRCUIT DIAGRAM

Jan. 2009
 MITSUBISHI IGBT MODULES

CM300DX-24A
HIGH POWER SWITCHING USE

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

INVERTER PART
Symbol Parameter Conditions Rating Unit
VCES Collector-emitter voltage G-E Short 1200
V
VGES Gate-emitter voltage C-E Short ±20
IC DC, TC = 90°C (Note. 1) 300
Collector current A
ICRM Pulse (Note. 4) 600
PC Maximum collector dissipation TC = 25°C (Note. 1, 5) 1890 W
IE (Note.3) Emitter current TC = 25°C (Note. 1) 300
A
IERM(Note.3) (Free wheeling diode forward current) Pulse (Note. 4) 600
Tj Junction temperature –40 ~ +150
°C
Tstg Storage temperature –40 ~ +125
Viso Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute 2500 Vrms
— Base plate flatness On the centerilne X, Y (Note. 8) ±0 ~ +100 μm
— Torque strength Main terminals M6 screw 3.5 ~ 4.5
N·m
— Torque strength Mounting M5 screw 2.5 ~ 3.5
— Weight (Typical) 330 g
Note. 8: The base plate flatness measurement points are in the following figure.
Heat sink side

Y +：convex
–：concave
+

+
Heat sink side

Jan. 2009

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 MITSUBISHI IGBT MODULES

CM300DX-24A

HIGH POWER SWITCHING USE

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

INVERTER PART
Limits
Symbol Parameter Conditions Unit
Min. Typ. Max.
ICES Collector cutoff current VCE = VCES, VGE = 0V — — 1 mA
VGE(th) Gate-emitter threshold voltage IC = 30mA, VCE = 10V 6 7 8 V
IGES Gate leakage current ±VGE = VGES, VCE = 0V — — 0.5 μA
Tj = 25°C — 2.0 2.6
IC = 300A, VGE = 15V (Note. 6)
VCE(sat) Collector-emitter saturation voltage Tj = 125°C — 2.2 — V
IC = 300A, VGE = 15V Chip — 1.9 —
Cies Input capacitance — — 47
VCE = 10V
Coes Output capacitance (Note. 6) — — 4 nF
VGE = 0V
Cres Reverse transfer capacitance — — 0.9
QG Total gate charge VCC = 600V, IC = 300A, VGE = 15V — 1350 — nC
td(on) Turn-on delay time VCC = 600V, IC = 300A — — 550
tr Turn-on rise time VGE = ±15V, RG = 1.0Ω — — 180
td(off) Turn-off delay time Inductive load — — 600 ns
tf Turn-off fall time — — 600
trr (Note.3) Reverse recovery time — — 250
(IE = 300A)
Qrr (Note.3) Reverse recovery charge — 8 — μC
Tj = 25°C — 2.6 3.4
IE = 300A, VGE = 0V (Note. 6)
VEC(Note.3) Emitter-collector voltage Tj = 125°C — 2.16 — V
IE = 300A, VGE = 0V Chip — 2.5 —
Rlead Module lead resistance Main terminals-chip, per switch — 1.2 — mΩ
Rth(j-c)Q Thermal resistance per IGBT — — 0.066
Rth(j-c)R (Junction to case) (Note. 1) per free wheeling diode — — 0.12
K/W
Contact thermal resistance Thermal grease applied
Rth(c-f) (Note. 2) — 0.015 —
(Case to heat sink) (Note. 1) per 1 module
TC = 25°C 2.1 3 3.9
RGint Internal gate resistance per switch
TC = 125°C 4.2 6 7.8 Ω
RG External gate resistance 1.0 — 10

NTC THERMISTOR PART

Limits
Symbol Parameter Conditions Unit
Min. Typ. Max.
R Zero power resistance TC = 25°C 4.85 5.00 5.15 kΩ
ΔR/R Deviation of resistance TC = 100°C, R100 = 493Ω –7.3 — +7.8 %
B(25/50) B constant Approximate by equation (Note. 7) — 3375 — K
P25 Power dissipation TC = 25°C — — 10 mW

Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCE(sat) and VEC)
7: B(25/50) = In( R25 )/( 1 1
)
R50 T25 T50
R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K]

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 MITSUBISHI IGBT MODULES

CM300DX-24A
HIGH POWER SWITCHING USE

Chip Location (Top view) Dimensions in mm (tolerance: ±1mm)

(152)
(121.7)
(110)

0 0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

17.3
47
Di 2 Tr2 24

Di 1 Di 1 26.5
(62)
(50)

30.8 Di 2 Tr2
Tr1 Tr1 37.4
40.0 48 Th 23

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

LABEL SIDE
0

28.5
34.0
39.4

83.6

97.1
Each mark points the center position of each chip. Tr*: IGBT, Di*: FWDi, Th: NTC thermistor

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 MITSUBISHI IGBT MODULES

CM300DX-24A
HIGH POWER SWITCHING USE

C1 C1
C1(C1s) C1(C1s)

V VGE = 15V IC VGE = 0V

G1 G1

E1(E1s) E1(E1s)

E1C2 E1C2

VGE = 0V VGE = 15V V

G2 IC
G2

E2(E2s) E2(E2s) E2
E2

Tr1 Tr2

VCE(sat) test circuit

C1 C1
C1(C1s) C1(C1s)

V VGE = 0V IE VGE = 0V
G1 G1

E1(E1s) E1(E1s)

E1C2 E1C2

VGE = 0V VGE = 0V V
G2 IE
G2

E2(E2s) E2(E2s) E2
E2

Di1 Di2

VEC test circuit

VGE 90% IE
IE
Arm
0V 0% trr
Load
–VGE
+ VCC IC
0A t
90%

+VGE RG
VCE
0V Irr 1/2 ✕ Irr
VGE IC
–VGE 0A 10% Qrr = 1/2 ✕ Irr ✕ trr
tr tf
td(on) td(off)

Switching time test circuit and waveforms trr, Qrr test waveform

Jan. 2009

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 MITSUBISHI IGBT MODULES

CM300DX-24A
HIGH POWER SWITCHING USE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part (TYPICAL) Inverter part
600 4

SATURATION VOLTAGE VCE(sat) (V)

VGE = 15 Tj = 25°C VGE = 15V
20V
COLLECTOR CURRENT IC (A)

13 3.5
500

COLLECTOR-EMITTER
3
400
12 2.5

300 2

11 1.5
200
1
100 10
0.5 Tj = 25°C
9 Tj = 125°C
0 0
0 1 2 3 4 5 6 7 8 9 10 0 100 200 300 400 500 600

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION FREE WHEELING DIODE

VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) Inverter part (TYPICAL) Inverter part
10 103
SATURATION VOLTAGE VCE(sat) (V)

Tj = 25°C 7
5
EMITTER CURRENT IE (A)

8
COLLECTOR-EMITTER

3
2
6
102
4 7
5
IC = 600A
IC = 300A 3
2
2
Tj = 25°C
IC = 120A
Tj = 125°C
0 101
6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 4

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

HALF-BRIDGE
CAPACITANCE CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part (TYPICAL) Inverter part
103 103
7 7 td(off)
5 5
3 td(on)
2 3
tf
SWITCHING TIME (ns)

102 2
CAPACITANCE (nF)

7
5 Cies 102
3 7
2 5
101 3 tr
7 Coes
5 2
3 Conditions:
2 101 VCC = 600V
7
100 5 VGE = ±15V
7
5 Cres 3 RG = 1.0Ω
3 2 Tj = 125°C
2
VGE = 0V Inductive load
10–1 –1 100 1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 102 2 3 5 7 103

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

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 MITSUBISHI IGBT MODULES

CM300DX-24A
HIGH POWER SWITCHING USE

HALF-BRIDGE HALF-BRIDGE
SWITCHING CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part (TYPICAL) Inverter part
103 102
7 td(on) 7
td(off)

SWITCHING LOSS (mJ/pulse)

5 5
SWITCHING TIME (ns)

3
tf 3
2 2
tr
102 101
Eoff
7 7
Conditions: Conditions:
5 5 Eon
VCC = 600V VCC = 600V
3 VGE = ±15V 3 Err VGE = ±15V
IC = 300A RG = 1.0Ω
2 2
Tj = 125°C Tj = 125°C
Inductive load Inductive load
101 0 100 1
10 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 102 2 3 5 7 103

GATE RESISTANCE RG (Ω) COLLECTOR CURRENT IC (A)

EMITTER CURRENT IE (A)

HALF-BRIDGE REVERSE RECOVERY CHARACTERISTICS

SWITCHING CHARACTERISTICS OF FREE WHEELING DIODE
(TYPICAL) Inverter part (TYPICAL) Inverter part
103 103
7 7
5 5
SWITCHING LOSS (mJ/pulse)

3 3
2 2 Irr
Eon
102 102
lrr (A), trr (ns)

7 7 trr
5 5
3 Eoff 3
2 2
Conditions: Conditions:
101 Err VCC = 600V 101 VCC = 600V
7 7
5 VGE = ±15V 5 VGE = ±15V
3 IC, IE = 300A 3 RG = 1.0Ω
2 Tj = 125°C 2 Tj = 25°C
Inductive load Inductive load
100 0 100 1
10 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 102 2 3 5 7 103

GATE RESISTANCE RG (Ω) EMITTER CURRENT IE (A)

TRANSIENT THERMAL
GATE CHARGE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(TYPICAL) Inverter part
20 100
IC = 300A 7 Single pulse,
GATE-EMITTER VOLTAGE VGE (V)

THERMAL IMPEDANCE Zth(j–c)

5 TC = 25°C
NORMALIZED TRANSIENT

VCC = 400V 3
15 2
VCC = 600V 10–1
7
5
10 3
2

10–2
7
5 5
3
2 Inverter IGBT part : Per unit base = Rth(j–c) = 0.066K/W
Inverter FWDi part : Per unit base = Rth(j–c) = 0.12K/W
0 10–3
0 200 400 600 800 1000 1200 1400 1600 1800 2000 10–52 3 5710–42 3 5710–32 3 5710–22 3 5710–12 3 57 100 2 3 57 101

GATE CHARGE QG (nC) TIME (s)

Jan. 2009