CEPF640/CEBF640

CEFF640
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
Type VDSS RDS(ON) ID @VGS
CEPF640 200V 0.15Ω 19A 10V
CEBF640 200V 0.15Ω 19A 10V
CEFF640 200V 0.15Ω 19A d 10V

Super high dense cell design for extremely low RDS(ON).

D
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-220F full-pak for through hole.

D G

G G
G D D
S S S S
CEB SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-220 TO-220F

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Limit
Parameter Symbol Units
TO-220/263 TO-220F
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 19 19 d
A
Drain Current-Pulsed a
IDM e
76 76 d
A
Maximum Power Dissipation @ TC = 25 C 125 40 W
PD
- Derate above 25 C 1.0 0.32 W/ C
Operating and Store Temperature Range TJ,Tstg -55 to 150 C

Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case RθJC 1.0 3.1 C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W

Rev 3. 2008.Oct.
Details are subject to change without notice . http://www.cetsemi.com
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 CEPF640/CEBF640
CEFF640
Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Units 4

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 200 V
Zero Gate Voltage Drain Current IDSS VDS = 160V, VGS = 0V 25 µA
Gate Body Leakage Current, Forward IGSSF VGS = 20V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -20V, VDS = 0V -100 nA
On Characteristics b
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2 4 V
Static Drain-Source
RDS(on) VGS = 10V, ID = 10A 0.125 0.150 Ω
On-Resistance
Dynamic Characteristics c
Forward Transconductance gFS VDS = 10V, ID = 9A 9 S
Input Capacitance Ciss 1955 pF
VDS = 25V, VGS = 0V,
Output Capacitance Coss f = 1.0 MHz 355 pF
Reverse Transfer Capacitance Crss 55 pF
Switching Characteristics c
Turn-On Delay Time td(on) 21 42 ns
Turn-On Rise Time tr VDD = 100V, ID = 11A, 5 10 ns
VGS = 10V, RGEN = 9.1Ω
Turn-Off Delay Time td(off) 66 132 ns
Turn-Off Fall Time tf 11 22 ns
Total Gate Charge Qg 44 57 nC
VDS = 160V, ID = 19A,
Gate-Source Charge Qgs VGS = 10V 8 nC
Gate-Drain Charge Qgd 14 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current IS f 19 A
Drain-Source Diode Forward Voltage b
VSD VGS = 0V, IS = 19A g 1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f .Full package IS(max) = 10.5A .
g.Full package VSD test condition IS = 10.5A .
i.L = 1mH, IAS = 25A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C

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 CEPF640/CEBF640
CEFF640
12 40
25 C
10
VGS=10,9,8,7V
ID, Drain Current (A)

ID, Drain Current (A)

30
8 -55 C TJ=125 C

6 VGS=6V 20

4
10
2

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 4 5 6 7 8

VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

3000 3.0
ID=10A
RDS(ON), On-Resistance(Ohms)

VGS=10V
2500 2.5
C, Capacitance (pF)

RDS(ON), Normalized

Ciss
2000 2.0

1500 1.5

1000 1.0

500 Coss 0.5

Crss
0 0.0
0 5 10 15 20 25 -100 -50 0 50 100 150 200

VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation

with Temperature
1.3
VDS=VGS VGS=0V
Gate-Source Threshold Voltage

ID=250µA
IS, Source-drain current (A)

1.2

1.1
VTH, Normalized

1
10
1.0

0.9
0
10
0.8

0.7

-1
0.6 10
-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4

TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage

with Temperature Variation with Source Current

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 CEPF640/CEBF640
CEFF640
2
10 10
VDS=160V
VGS, Gate to Source Voltage (V)

8
ID=19A RDS(ON)Limit 10ms
100ms
4

ID, Drain Current (A)

1ms
6 1
10ms
10
DC
4

2 0 TC=25 C
10
TJ=150 C
Single Pulse
0
0 8 16 24 32 40 48 56 64 0 1 2
10 10 10

Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge Figure 8. Maximum Safe

Operating Area

VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 9. Switching Test Circuit Figure 10. Switching Waveforms

Transient Thermal Impedance

0
10
r(t),Normalized Effective

D=0.5

0.2
-1 0.1 PDM
10
0.05
t1
0.02 t2
0.01
Single Pulse 1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
-2 4. Duty Cycle, D=t1/t2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve