CEF02N6

Sep. 2002

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES
600V , 1.5A , RDS(ON)=5 Ω @VGS=10V. D
Super high dense cell design for extremely low RDS(ON). 6
High power and current handling capability.
TO-220F full-pak for through hole
G

G
D
S S
TO-220F

ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS Ć 30 V

Drain Current-Continuous ID 1.5 A

-Pulsed IDM 4.5 A
Drain-Source Diode Forward Current IS 4.5 A
Maximum Power Dissipation @Tc=25 C 29 W
PD
Derate above 25 C 0.23 W/ C
Operating and Storage Temperautre Range TJ, TSTG -65 to 150 C

THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case RįJC 4.3 C/W

Thermal Resistance, Junction-to-Ambient RįJA 65 C/W

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 CEF02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
a
DRAIN-SOURCE AVALANCHE RATING
Single Pulse Drain-Source VDD =50V, L=60mH
EAS 125 mJ
6 Avalanche Energy RG=9.1Ω
Maximum Drain-Source
IAS 2 A
Avalanche Current
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0V,ID = 250µA 600 V
Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V 25 µA
Gate-Body Leakage IGSS VGS = Ć30V, VDS = 0V Ć100 nA
ON CHARACTERISTICS a
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 4 V

Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 1A 3.8 5.0 Ω

On-State Drain Current ID(ON) VGS = 10V, VDS = 10V 2 A

Forward Transconductance gFS VDS = 50V, ID = 1A 1.2 S
b
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) VDD = 300V, 18 35 ns
Rise Time tr ID = 2A, 18 35 ns
VGS = 10V
Turn-Off Delay Time tD(OFF) RGEN=18Ω 50 90 ns
Fall Time tf 16 40 ns
Total Gate Charge Qg 20 25 nC
VDS =480V, ID = 2A,
Gate-Source Charge Qgs 2 nC
VGS =10V
Gate-Drain Charge Qgd 12 nC
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 CEF02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
DYNAMIC CHARACTERISTICS b
Input Capacitance CISS 250 PF
VDS =25V, VGS = 0V
Output Capacitance COSS 50 PF 6
f =1.0MHZ
Reverse Transfer Capacitance CRSS 30 PF
a
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage VSD VGS = 0V, Is =1.5A 1.5 V

Notes
a.Pulse Test:Pulse Widthś 300ijs, Duty Cycle ś 2%.
b.Guaranteed by design, not subject to production testing.

3.0
VGS=10,9,8,7V
2.5
ID, Drain Current(A)

ID, Drain Current (A)

2.0
150 C
1
1.5
VGS=6V

1.0
VGS=5V -55 C
0.5 1.VDS=40V
2.Pulse Test
25 C
0 0.1
0 2 4 6 8 10 12 2 4 6 8 10
VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics Figure 2. Transfer Characteristics

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 CEF02N6
600 2.2

RDS(ON), On-Resistance(Ohms)
ID=1A
VGS=10V
500 1.9

RDS(ON), Normalized
C, Capacitance (pF)

400 1.6
Ciss
300 1.3

200 1.0
Coss
100 0.7
6 0
Crss
0.4
0 5 10 15 20 25 -100 -50 0 50 100 150 200

VDS, Drain-to Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation with

Temperature
1.30 1.15
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage

VDS=VGS ID=250ijA
1.20 1.10
ID=250ijA
BVDSS, Normalized

1.10 1.05
Vth, Normalized

1.0 1.00
0.90
0.95
0.80
0.90
0.70
0.60 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

Tj, Junction Temperature ( C) Tj, Junction Temperature ( C)

Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation

with Temperature with Temperature

4 20
10 VGS=0V
VDS=50V
gFS, Transconductance (S)

Is, Source-drain current (A)

2
1

0 0.1
0 1 2 3 4 0.4 0.6 0.8 1.0 1.2

IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
with Drain Current Variation with Source Current

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 CEF02N6
15 10
VGS, Gate to Source Voltage (V)

VDS=480V
12 ID=2A 1m
s
t 10

ID, Drain Current (A)

i mi m
1 N )L 10 s
(O 0m
9 RD
S
s

D
C
6
0.1
3 Tc=25 C
Tj=150C
0 0.01
Single Pulse 6
0 6 12 18 24 1 10 100 500 1000

Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V)

Figure 9. Gate Charge Figure 10. Maximum Safe
Operating Area

VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 11. Switching Test Circuit Figure 12. Switching Waveforms

0.2

1
Transient Thermal Impedance

D=0.5
r(t),Normalized Effective

0.1
0.1 PDM
0.05 t1
t2

0.02 1. RįJC (t)=r (t) * RįJC

2. RįJC=See Datasheet
0.01 3. TJM-TC = P* RįJC (t)
4. Duty Cycle, D=t1/t2
0.01
0.01 0.1 1 10 100 1000 10000

Single Pulse Square Wave Pulse Duration (msec)

Figure 13. Normalized Thermal Transient Impedance Curve

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