STM6960

SamHop Microelectronics Corp. Nov 12 2007 Ver1.1

Dual N-Channel Enhancement Mode Field Effect Transistor

PRODUCT SUMMARY FEATURES

VDSS ID RDS(ON) ( m W ) Max

Super high dense cell design for low RDS(ON).
Rugged and reliable.
60 @ VGS = 10V
60V 5A Surface Mount Package.
75 @ VGS = 4.5V

D1 D1 D2 D2
8 7 6 5

SO-8
1 1 2 3 4
S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
a 25 C 5 A
Drain Current-Continuous @Ta ID
70 C 4.3 A
b
-Pulsed IDM 25 A

Drain-Source Diode Forward Current a IS 1.7 A

Ta= 25 C 2
Maximum Power Dissipation a PD W
Ta=70 C 1.44
Operating Junction and Storage
TJ, TSTG -55 to 150 C
Temperature Range

THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a R JA 62.5 C /W

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ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)
Parameter Symbol Condition Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS 0V, ID 250uA 60 V
Zero Gate Voltage Drain Current IDSS VDS 48V, VGS 0V 1 uA
Gate-Body Leakage IGSS VGS 20V, VDS 0V 100 nA
ON CHARACTERISTICS b
Gate Threshold Voltage VGS(th) VDS VGS, ID = 250uA 1.0 1.8 3.0 V
VGS 10V, ID 4.5A 47 60 m ohm
Drain-Source On-State Resistance RDS(ON)
VGS 4.5V, ID 3A 55 75 m ohm

On-State Drain Current ID(ON) VDS = 5V, VGS = 10V 20 A

Forward Transconductance gFS VDS 5V, ID 4.5A 12 S
DYNAMIC CHARACTERISTICS c
Input Capacitance CISS 700 PF
VDS =25V, VGS = 0V
Output Capacitance COSS 80 PF
f =1.0MHZ
Reverse Transfer Capacitance CRSS 50 PF

Gate resistance Rg VGS =0V, VDS = 0V, f=1.0MHZ 5 ohm

c
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 13 ns
VDD = 30V
Rise Time t ID = 4.5 A 10 ns
Turn-Off Delay Time tD(OFF) VGS = 10V 28 ns
RGEN = 3 ohm
Fall Time t 7 ns
Total Gate Charge Qg VDS =48V, ID =4.5A,VGS =10V 15 nC
VDS =48V, ID =4.5A,VGS =4.5V 7.5 nC
Gate-Source Charge Qgs VDS =48V, ID = 4.5 A 1.6 nC
Gate-Drain Charge Qgd VGS =10V 4.3 nC
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E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)
C
Parameter S ymbol Condition Min Typ Max Unit
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage VSD V GS = 0V, Is =1.7A 0.8 1.2 V

Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
15 15
V G S =4.5V
-55 C 25 C
12 V G S =10V 12
ID , Drain C urrent(A)

I D , Drain C urrent (A)

V G S =4V
9 9
V G S =3.5V

6 6

3 3
V G S =3V T j=125 C

0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.8 1.6 2.4 3.2 4.0 4.8
V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

90 2.0
R DS (ON) , On-R es is tance

75 1.8
V G S =4.5V V G S =10V
R DS (on) (m W)

60 1.6
Normalized

I D =4.5A

45 1.4
V G S =10V

30 1.2 V G S =4.5V
I D =3A

15 1.0

1 0
1 3 6 9 12 15 0 25 50 75 100 125 150
T j( C )
I D , Drain C urrent (A) T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance Variation with
and G ate V oltage Drain C urrent and Temperature

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Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

1.3 1.15
I D =250uA
1.2 V DS =V G S
1.10
I D =250uA

B V DS S , Normalized
V th, Normalized

1.1 1.05
1.0
1.00
0.9
0.95
0.8
0.90
6 0.7

0.6 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

with T emperature with T emperature

180 20.0
I D =4.5A
150 25 C
Is , S ource-drain current (A)

10.0
R DS (on) (m W)

120
125 C 5.0
90

60
75 C
75 C 25 C
30
125 C

0 1.0
0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5

V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V )

F igure 7. On-R es is tance vs . F igure 8. B ody Diode F orward V oltage

G ate-S ource V oltage V ariation with S ource C urrent

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1200 10

V G S , G ate to S ource V oltage (V )

V DS =48V
1000 8 I D =4.5A
C , C apacitance (pF )

800
C is s 6
600
4
400

6 200
C os s
2

C rs s 0
0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16
V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC )

F igure 9. C apacitance F igure 10. G ate C harge

600 50
30 it
) L im
10 ON 10
S witching T ime (ns )

( ms
I D , Drain C urrent (A)

100 RD
S

60 Tr 10
0m
s
Tf
1s
10 1 DC

V DS =30V ,ID=4.5A 0.1 V G S =10V

1 S ingle P ulse
V G S =10 V
T A =25 C
0.03
1 6 10 60 100 300 600 0.1 1 10 60

R g, G ate R es is tance ( W) V DS , Drain-S ource V oltage (V )

F igure 11.s witching characteris tics F igure 12. Maximum S afe

O perating Area
9
Normalized Transient

1
Thermal Resistance

0.5

0.2
0.1
0.1 P DM
0.05
t1
t2
0.02
0.01 on 1. R thJ A (t)=r (t) * R thJ A
2. R thJ A =S ee Datas heet
0.01 Single Pulse 3. T J M-T A = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve

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PAC K AG E OUT LINE DIME NS IONS

S O-8

E
D

0.015X45°
C
A

0.008
TYP.
A1

e B
0.05 TYP. 0.016 TYP.
H

MILLIME T E R S INC HE S
S Y MB OLS
MIN MAX MIN MAX
A 1.35 1.75 0.053 0.069
A1 0.10 0.25 0.004 0.010
D 4.80 4.98 0.189 0.196
E 3.81 3.99 0.150 0.157
H 5.79 6.20 0.228 0.244
L 0.41 1.27 0.016 0.050
0° 8° 0° 8°

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SO-8 Tape and Reel Data

SO-8 Carrier Tape

unit:㎜
PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T
ψ1.5
SOP 8N ψ1.5 12.0 5.5 8.0 4.0 2.0 0.3
6.40 5.20 2.10 + 0.1 1.75
150㏕ (MIN) ±0.3 ±0.05 ±0.05 ±0.05
- 0.0

SO-8 Reel

UNIT:㎜

TAPE SIZE REEL SIZE M N W W1 H K S G R V

12 ㎜ 330 62 12.4 16.8 ψ12.75 2.0

ψ330
± 1 ±1.5 + 0.2 - 0.4 + 0.15 ±0.15