Professional Documents
Culture Documents
FEATURES
PRODUCT SUMMARY
● Super high dense cell design for low RDS(ON)
VDSS ID RDS(ON) (mΩ) Typ
● Rugged and reliable
65@ VGS=4.5V
● Simple drive requirement 20V 3.6A
90@ VGS=2.5V
● SOT-23 package
D
NOTE:The SI2308 is available
in a lead-free package
S
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª Rth JA 100 ℃/W
1
SI2308
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
VGS=4.5V,ID=2.8A 65 80
Drain-Source On-State Resistance RDS(ON) mΩ
VGS=2.5V,ID=2.0A 90 110
FS
Forward Transconductance VGS=5V,ID=5A 5 S
DAYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISISTICS
2
SI2308
ELECTRICAL CHARACTERICS (TA=25℃ unless otherwise noted)
Notes
a. Surface Mounted on FR4 Board, t≦10sec
b. Pulse Test: Pulse Width≦300Us, Duty≦2%
c. Guaranteed by design, not subject to production testing.
ID, Drain Current (A)
ID,Drain Current(A)
VGS=4V
ID=3A
C,Capacitance(pF)
3
SI2308
1.3
Gate-Source Threshold Voltage
1.15
Drains-Source Breakdown
1.2 VDS=VGS
BVDSS, Normalized
1.10 ID=250uA
Vth, Normalized
1.1 ID=250uA
1.05
1.0
1.00
0.9
0.95
0.8
0.90
0.7
0.85
0.6
--50 -25 0 25 50 75 100 125 --50 -25 0 25 50 75 100 125
21 20
FS,Transconductance(S)
18 10
Is,Source-drian current(A)
15
12
3 1
VGS=5V Tj=25℃
0 0
0 5 10 15 20 25 30 0.6 0.8 1.0 1.2 1.4 1.6
VDS=10V
4
ID,Drain Current(A)
ID=3A
1
3
0.1
0.03
0
0 2 4 6 8 10 12 14 0.1 1 10 20 50