STP310N10F7

N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ VII DeepGATE™

Power MOSFET in a TO-220 package
Datasheet - production data

Features

TAB Order code VDS RDS(on) max. ID

STP310N10F7 100 V 2.7 mΩ 180 A

• Ultra low on-resistance

• 100% avalanche tested
3
2
1

TO-220 Applications
• Switching applications

Description
Figure 1. Internal schematic diagram This device utilizes the 7th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
'7$%
MOSFET exhibits the lowest RDS(on) in all
packages.

*

6

$0Y

Table 1. Device summary

Order codes Marking Package Packaging

STP310N10F7 310N10F7 TO-220 Tube

July 2013 DocID022287 Rev 7 1/13

This is information on a product in full production. www.st.com
Contents STP310N10F7

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits .............................................. 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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STP310N10F7 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 100 V

VGS Gate-source voltage ± 20 V

ID (1) Drain current (continuous) at TC = 25°C 180 A

ID (1) Drain current (continuous) at TC=100°C 120 A

IDM (2) Drain current (pulsed) 720 A

PTOT Total dissipation at TC = 25°C 315 W

Derating factor 2.1 W/°C
Single pulse avalanche energy
EAS(3) 1 J
(TJ = 25 °C, L=0.55 mH, Ias=65 A )
Tj Operating junction temperature
- 55 to 175 °C
Tstg storage temperature

1. Current limited by package.

2. Pulse width limited by safe operating area.
3. Starting TJ=25°C, ID=60 A, VDD=50 V

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case 0.48 °C/W

Thermal resistance junction-ambient
Rthj-amb 62.5 °C/W
max

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13
Electrical characteristics STP310N10F7

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 250 µA 100 V
voltage (VGS= 0)

Zero gate voltage drain VDS= 100 V 1 µA

IDSS
current (VGS = 0) VDS= 100 V, TC= 125°C 100 µA
Gate body leakage current
IGSS VGS = 20 V 100 nA
(VDS = 0)
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2.5 3.5 4.5 V
Static drain-source on-
RDS(on) VGS= 10 V, ID= 60 A 2.3 2.7 mΩ
resistance

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 12800 - pF

Coss Output capacitance VDS = 25 V, f = 1 MHz, - 3500 - pF
VGS = 0
Reverse transfer
Crss - 170 - pF
capacitance
Qg Total gate charge - 180 - nC
VDD = 50 V, ID = 180 A,
Qgs Gate-source charge VGS = 10 V - 78 - nC
(see Figure 14)
Qgd Gate-source charge - 34 - nC

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 62 - ns

VDD = 50 V, ID = 90 A
tr Rise time - 108 - ns
RG = 4.7 Ω VGS = 10 V
td(off) Turn-off delay time (see Figure 13, - 148 - ns
Figure 18)
tf Fall time - 40 - ns

4/13 DocID022287 Rev 7

STP310N10F7 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 180 A

Source-drain current
ISDM(1) - 720 A
(pulsed)

VSD(2) Forward on voltage ISD=60 A, VGS=0 - 1.5 V

trr Reverse recovery time ISD=180 A, - 85 ns

di/dt = 100 A/µs,
Qrr Reverse recovery charge - 200 nC
VDD=80 V, Tj=150°C
IRRM Reverse recovery current (see Figure 15) - 4.7 A
1. Pulse width limited by safe operating area.
2. Pulse duration = 300µs, duty cycle 1.5%

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13
Electrical characteristics STP310N10F7

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

AM14733v1 280tok
ID K
(A) is
ea δ=0.5
ar n)
is DS(o
th
in ax R
ion y m
at
100 p er d b 0.2
O ite
Lim
0.1 0.05
-1
10 100µs 10
0.02
Tj=175°C Zth=k Rthj-c
1ms 0.01 δ=tp/τ
1 Tc=25°C
Sinlge 10ms
pulse Single pulse tp

τ
-2
0.1 10 -5 -4 -3 -2 -1
0.1 1 10 VDS(V) 10 10 10 10 10 tp (s)

Figure 4. Output characteristics Figure 5. Transfer characteristics

AM14734v1 AM14735v1
ID ID
(A) VGS=10V (A)
VDS = 2V
300 350
8V
7V 300
250
250
200
200
150
150
100 100
6V

50 50
5V
0 0
0 2 4 6 8 VDS(V) 0 1 2 3 4 5 6 7 8 VGS(V)

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

AM14736v1 AM14737v1
VGS RDS(on)
(V) (mΩ)
VDD=50V 2.45
10 VGS=10V
ID=180A
2.40
8
2.35

6 2.30

2.25
4
2.20
2
2.15

0 2.10
0 50 100 150 Qg(nC) 0 40 80 120 160 ID(A)

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STP310N10F7 Electrical characteristics

Figure 8. Capacitance variations Figure 9. Source-drain diode forward

characteristics
AM14738v1 AM14739v1
C VSD
(pF) (V)
14000 1.05
Ciss TJ=-50°C
12000
0.95
10000
0.85
8000 TJ=25°C
0.75
6000
0.65
4000
Crss TJ=150°C
2000 0.55
Coss
0 0.45
0 20 40 60 80 100 VDS(V) 0 40 80 120 160 ISD(A)

Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized on-resistance vs
temperature temperature
AM14741v1 AM14740v1
VGS(th) RDS(on)
(norm) (norm)
2.0
ID = 250µA ID = 60A
1.0

1.6
0.90

1.2
0.80

0.8
0.70

0.60 0.4
-75 -25 0 25 75 125 TJ(°C) -75 -25 0 25 75 125 TJ(°C)

Figure 12. Normalized BVDSS vs temperature

AM14742v1
BVDSS
(norm)
ID = 1mA
1.04

1.02

1.00

0.98

0.96

0.94
-75 -25 0 25 75 125 TJ(°C)

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13
Test circuits STP310N10F7

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit
switching and diode recovery times

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
V(BR)DSS ton toff
tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

8/13 DocID022287 Rev 7

STP310N10F7 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

DocID022287 Rev 7 9/13

13
Package mechanical data STP310N10F7

Table 8. TO-220 type A mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90

∅P 3.75 3.85

Q 2.65 2.95

10/13 DocID022287 Rev 7

STP310N10F7 Package mechanical data

Figure 19. TO-220 type A drawing

BW\SH$B5HYB7

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13
Revision history STP310N10F7

5 Revision history

Table 9. Document revision history

Date Revision Changes

19-Oct-2011 1 Initial version.

21-Dec-2011 2 Updated title and description in cover page.
Updated ID value at TC = 25°C in the whole document.
06-Mar-2012 3 Table 5, Table 6 and Table 7 have been updated with typical
values.
Document status promoted from preliminary to production data.
20-Aug-2012 4 Added Section 2.1: Electrical characteristics (curves).
Minor text changes.
– Added: H2PAK-2 and H2PAK-6 packages
– Updated: Section 4: Package mechanical data and Section 4:
31-Oct-2012 5
Package mechanical data
– Minor text changes
– Minor text changes
07-Dec-2012 6 – The part numbers STH310N10F7-2, STH310N10F7-6 have
been moved to a separate datasheet
– Modified: IDSS and VGS(th) values in Table 4.
31-Jul-2013 7 – Minor text changes
– Inserted: EAS value in Table 2

12/13 DocID022287 Rev 7

STP310N10F7

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