STT6N3LLH6

N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™

Power MOSFET in a SOT23-6L package
Datasheet - production data

Features
Order code VDSS RDS(on) max ID PTOT
0.025 Ω
4 (VGS= 10 V)
5 STT6N3LLH6 30 V 6A 1.6 W
6
0.036 Ω
3 (VGS= 4.5 V)
2
1
• RDS(on) * Qg industry benchmark
SOT23-6L • Extremely low on-resistance RDS(on)
• High avalanche ruggedness
• Low gate drive power losses

Figure 1. Internal schematic diagram Applications

• Switching applications

Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.

Table 1. Device summary

Order code Marking Package Packaging

STT6N3LLH6 STG1 SOT23-6L Tape and reel

March 2014 DocID023012 Rev 3 1/12

This is information on a product in full production. www.st.com
Contents STT6N3LLH6

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6

3 Test circuits .............................................. 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2/12 DocID023012 Rev 3

STT6N3LLH6 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 30 V

VGS Gate-source voltage ± 20 V
ID Drain current (continuous) at Tpcb = 25 °C 6 A
ID Drain current (continuous) at Tpcb = 100 °C 3.75 A
(1)
IDM Drain current (pulsed) 24 A
PTOT Total dissipation at TC = 25 °C 1.6 W
Derating factor 0.013 W/°C
Tstg Storage temperature -55 to 150 °C
Tj Max. operating junction temperature 150 °C
1. Pulse width limited by safe operating area

Table 3. Thermal resistance

Symbol Parameter Value Unit

Rthj-pcb(1) Thermal resistance junction-pcb max 78 °C/W

1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec

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12
Electrical characteristics STT6N3LLH6

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 250 μA, VGS= 0 30 V
Voltage

Zero gate voltage drain VDS = 30 V 1 μA

IDSS
current (VGS = 0) VDS = 30 V, Tc = 125 °C 10 μA
Gate body leakage current
IGSS VGS = ± 20 V ±100 nA
(VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 1 V

Static drain-source on- VGS = 10 V, ID = 3 A 0.021 0.025 Ω

RDS(on)
resistance VGS = 4.5 V, ID = 3 A 0.032 0.036 Ω

Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 283 - pF

Coss Output capacitance VDS = 24 V, f=1 MHz, - 61 - pF
VGS = 0
Reverse transfer
Crss - 31 - pF
capacitance
Qg Total gate charge VDD = 10 V, ID = 6 A - 3.6 - nC
Qgs Gate-source charge VGS = 4.5 V - 1.5 - nC
Qgd Gate-drain charge Figure 14 - 1.1 - nC

Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 4.8 - ns

tr Rise time VDD = 10 V, ID = 3 A, - 11.2 - ns
RG = 4.7 Ω, VGS = 4.5 V
td(off) Turn-off delay time Figure 13 - 9.4 - ns
tf Fall time - 5.4 - ns

4/12 DocID023012 Rev 3

STT6N3LLH6 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current 6 A

-
ISDM(1) Source-drain current (pulsed) 24 A
VSD(2) Forward on voltage ISD =6 A, VGS = 0 - 1.1 V
trr Reverse recovery time ISD = 6 A, - 10.6 - ns
Qrr Reverse recovery charge di/dt = 100 A/μs, - 2.8 - nC
VDD = 16 V, TJ=150 °C
IRRM Reverse recovery current Figure 15 - 0.5 - A

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

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12
Electrical characteristics STT6N3LLH6

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance
AM15373v1 AM15363v1
ID K
(A)
s s=0.5
ai
100 are n)
t his DS(o 10
n R
n i ax
tio m
p era d by
O ite 0.2
10 Lim
0.1
10 -1 0.05
0.02
1
10ms Zthj-pcb=K*Rthj-pcb,
Rthj-pcb=78 C/W
Tj=150°C 100ms -2
0.01
10
0.1 Tc=25°C 1s Single pulse
Single
pulse
0.01 10 -3 -4 -2 -1 1 2
0
0.1 1 10 VDS(V) 10 10-3 10 10 10 10 10 tp(s)

Figure 4. Output characteristics Figure 5. Transfer characteristics

ID AM15361v1 ID AM15369v1
(A) VGS=5, 6, 7, 8, 9, 10V (A)
4V
20 20 VDS=3 V

16 16

12 12

3V
8 8

4 4

0 0
0 1 2 3 4 VDS(V) 0 1 2 3 4 VGS(V)

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

AM15358v1 AM15372v1
VGS RDS(on)
(V) (mΩ)
VDD=10V VGS= 4.5 V
10 ID=6A 40
35
8
30

6 25
20
4
15
10
2
5
0 0
0 2 4 6 Qg(nC) 2 4 6 8 10 12 ID(A)

6/12 DocID023012 Rev 3

STT6N3LLH6 Electrical characteristics

Figure 8. Capacitance variations Figure 9. Normalized on-resistance vs

temperature
AM15370v1 RDS(on) AM15360v1
C
(pF) (norm)
f= 1 MHz 1.8
Ciss ID= 3 A
1.6
VGS= 10 V
1.4
100
Coss 1.2
Crss 1
0.8
10
0.6
0.4
0.2
1 00
0 10 20 VDS(V) -55 -30 -5 20 45 70 95 120 145 TJ(°C)

Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized V(BR)DSS vs temperature
temperature
VGS(th) AM15368v1 AM15364v1
V(BR)DSS
(norm) (norm)

1.2 1.15
ID =250 µA ID = 1mA
1.1
1
1.05
0.8
1
0.6
0.95
0.4
0.9
0.2 0.85

0 0.8
-55 -30 -5 20 45 70 95 120 145 TJ(°C) -55 -30 -5 20 45 70 95 120 TJ(°C)

Figure 12. Source-drain diode forward

characteristics
AM15365v1
VSD
(V)

1 TJ=-55°C

0.9
0.8

0.7 TJ=25°C
0.6
TJ=150°C
0.5
0.4
0.3
0.2
0 2 4 6 8 10 ISD(A)

DocID023012 Rev 3 7/12

12
Test circuits STT6N3LLH6

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit
switching and diode recovery times

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
V(BR)DSS ton toff
tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

8/12 DocID023012 Rev 3

STT6N3LLH6 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

Figure 19. SOT23-6L package drawing

7049714_K_FU

DocID023012 Rev 3 9/12

12
Package mechanical data STT6N3LLH6

Table 8. SOT23-6L package mechanical data

mm
Dim.
Min. Typ. Max.

A 1.25
A1 0.00 0.15
A2 1.00 1.10 1.20
b 0.36 0.50
C 0.14 0.20
D 2.826 2.926 3.026
E 1.526 1.626 1.726
e 0.90 0.95 1.00
H 2.60 2.80 3.00
L 0.35 0.45 0.60
θ 0° 8°

Figure 20. SOT23-6L recommended footprint(a)

7049714_K_footprint_FU

a. All dimensions are in millimeters

10/12 DocID023012 Rev 3

STT6N3LLH6 Revision history

5 Revision history

Table 9. Document revision history

Date Revision Changes

11-Oct-2012 1 First release.

Modified: RDS(on) value on : Features table and in Table 4.
24-Oct-2013 2
Document status promoted from preliminary to production data.
Updated Section 4: Package mechanical data.
11-Mar-2014 3
Minor text changes

DocID023012 Rev 3 11/12

12
 STT6N3LLH6

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12/12 DocID023012 Rev 3