Advanced Power MOSFET IRF510A

FEATURES
BVDSS = 100 V
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
RDS(on) = 0.4 Ω
n Lower Input Capacitance ID = 5.6 A
n Improved Gate Charge
n Extended Safe Operating Area
n 175°C Operating Temperature
TO-220
n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
n Lower RDS(ON) : 0.289 Ω (Typ.) 1
2
3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 100 V
Continuous Drain Current (TC=25℃) 5.6
ID A
Continuous Drain Current (TC=100℃) 4
IDM Drain Current-Pulsed (1) 20 A
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulsed Avalanche Energy (2) 63 mJ
IAR Avalanche Current (1) 5.6 A
EAR Repetitive Avalanche Energy (1) 3.3 mJ
dv/dt Peak Diode Recovery dv/dt (2) 6.5 V/ns
Total Power Dissipation (TC=25℃) 33 W
PD
Linear Derating Factor 0.22 W/°C
Operating Junction and
TJ , TSTG - 55 to +175
Storage Temperature Range
Maximum Lead Temp. for Soldering °C
TL 300
Purposes, 1/8? from case for 5-seconds

Thermal Resistance
Symbol Characteristic Typ. Max. Units
RθJC Junction-to-Case -- 4.51
RθCS Case-to-Sink 0.5 -- °C/W
RθJA Junction-to-Ambient -- 62.5

Rev. B1
 N-CHANNEL
IRF510A POWER MOSFET

Electrical Characteristics (TC=25°C unless otherwise specified)

Symbol Characteristic Min. Typ. Max. Units Test Condition
BVDSS Drain-Source Breakdown Voltage 100 -- -- V VGS=0V,ID=250µA
ΔBV/ΔTJ Breakdown Voltage Temp. Coeff. -- 0.11 -- V/°C ID=250µA See Fig 7
VGS(th) Gate Threshold Voltage 2.0 -- 4.0 V VDS=5V,ID=250µA
Gate-Source Leakage , Forward -- -- 100 VGS=20V
IGSS nA
Gate-Source Leakage , Reverse -- -- -100 VGS=-20V
-- -- 10 VDS=100V
IDSS Drain-to-Source Leakage Current μA
-- -- 100 VDS=80V,TC=150°C
Static Drain-Source
RDS(on) -- -- 0.4 Ω VGS=10V,ID=2.8A
On-State Resistance (4)
gfs Forward Transconductance -- 3.49 -- S VDS=40V,ID=2.8A (4)
Ciss Input Capacitance -- 190 240
VGS=0V,VDS=25V,f =1MHz
Coss Output Capacitance -- 55 65 pF
See Fig 5
Crss Reverse Transfer Capacitance -- 21 25
td(on) Turn-On Delay Time -- 10 30
VDD=50V,ID=5.6A,
tr Rise Time -- 14 40
ns RG=24Ω
td(off) Turn-Off Delay Time -- 28 70
See Fig 13 (4)(5)
tf Fall Time -- 18 50
Qg Total Gate Charge -- 8.5 12 VDS=80V,VGS=10V,
Qgs Gate-Source Charge -- 1.6 -- nC ID=5.6A
Qgd Gate-Drain (“Miller”) Charge -- 4.1 -- See Fig 6 & Fig 12 (4)(5)

Source-Drain Diode Ratings and Characteristics

Symbol Characteristic Min. Typ. Max. Units Test Condition
IS Continuous Source Current -- -- 5.6 Integral reverse pn-diode
A
ISM Pulsed-Source Current (1) -- -- 20 in the MOSFET
VSD Diode Forward Voltage (4) -- -- 1.5 V TJ=25°C,IS=5.6A,VGS=0V
trr Reverse Recovery Time -- 85 -- ns TJ=25°C,IF=5.6A
Qrr Reverse Recovery Charge -- 0.23 -- µC diF/dt=100A/µs (4)

Notes ;
(1) Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
(2) L=3mH, IAS=5.6A, VDD=25V, RG=27Ω, Starting TJ =25°C
(3) ISD ≤ 5.6A, di/dt ≤ 250A/μs, VDD ≤ BVDSS , Starting TJ =25°C
(4) Pulse Test : Pulse Width = 250µs, Duty Cycle ≤ 2%
(5) Essentially Independent of Operating Temperature
 N-CHANNEL
POWER MOSFET IRF510A
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
VGS
Top : 15V
101 10 V 101
8.0 V
7.0 V
ID , Drain Current [A]

ID , Drain Current [A]

6.0 V
5.5V
5.0 V
Bottom : 4.5V 175 oC

100 100

25 oC
@ Notes :
1. VGS = 0 V
@ Notes : 2. VDS = 40 V
1. 250 µs Pulse Test - 55 oC
3. 250 µs Pulse Test
2. TC = 25 oC
10-1 -1 10-1
10 100 101 2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage
0.8

101

IDR , Reverse Drain Current [A]

Drain-Source On-Resistance

0.6 VGS = 10 V
RDS(on) , [ Ω ]

0.4
100

VGS = 20 V
0.2
@ Notes :
175 oC 1. VGS = 0 V
o o
@ Note : TJ = 25 C 25 C 2. 250 µs Pulse Test

0.0 10-1
0 5 10 15 20 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID , Drain Current [A] VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
350
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd VDS = 20 V
Crss= Cgd 10
280 VDS = 50 V
C iss
VGS , Gate-Source Voltage [V]
Capacitance [pF]

VDS = 80 V
210
C oss

140 @ Notes : 5
1. VGS = 0 V
C rss 2. f = 1 MHz
70

@ Notes : ID = 5.6 A
00 0
10 101 0 2 4 6 8 10
VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
 N-CHANNEL
IRF510A POWER MOSFET

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

Drain-Source Breakdown Voltage 1.2 3.0

2.5

Drain-Source On-Resistance
BVDSS , (Normalized)

RDS(on) , (Normalized)
1.1
2.0

1.0 1.5

1.0
0.9 @ Notes : @ Notes :
1. VGS = 0 V 1. VGS = 10 V
0.5
2. ID = 250 µA 2. ID = 2.8 A

0.8 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200 -75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Junction Temperature [oC] TJ , Junction Temperature [oC]

Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature
102 6
Operation in This Area
is Limited by R DS(on)
5
ID , Drain Current [A]

101
100 µs ID , Drain Current [A] 4
1 ms
10 ms
3
DC

100 2
@ Notes :
1. TC = 25 oC
1
2. TJ = 175 oC
3. Single Pulse
10-1 0 0
10 101 102 25 50 75 100 125 150 175
VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC]

Fig 11. Thermal Response

Thermal Response

D=0.5

@ Notes :
100 0.2 1. Zθ J C (t)=4.51 o C/W Max.
2. Duty Factor, D=t1 /t2
0.1 3. TJ M -TC =PD M *Zθ J C (t)

0.05
Z JC(t) ,

PDM
0.02
0.01 t1
10- 1 single pulse
t2
θ

10- 5 10- 4 10- 3 10- 2 10- 1 100 101

t1 , Square Wave Pulse Duration [sec]
 N-CHANNEL
POWER MOSFET IRF510A
Fig 12. Gate Charge Test Circuit & Waveform

* Current Regulator ”
VGS
Same Type
50KΩ as DUT Qg
12V 200nF
300nF 10V

VDS
VGS Qgs Qgd

DUT
3mA
R1 R2

Current Sampling (IG) Current Sampling (ID)

Charge
Resistor Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

RL
Vout Vout
90%
Vin VDD
( 0.5 rated VDS )
RG
DUT 10%
Vin
10V
td(on) tr td(off)
tf
t on t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

1 BVDSS
LL EAS = ---- LL IAS2 --------------------
VDS 2 BVDSS -- VDD
Vary tp to obtain ID BVDSS
required peak ID IAS

RG C VDD ID (t)
DUT
VDD VDS (t)
10V
tp tp Time
 N-CHANNEL
IRF510A POWER MOSFET

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

--

IS
L

Driver
VGS
RG Same Type
as DUT VDD

VGS • dv/dt controlled by “RG”

• IS controlled by Duty Factor “D”

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

IS
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

Vf VDD

Body Diode
Forward Voltage Drop
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST â MICROWIRE™ SILENT SWITCHER â UHC™
Bottomless™ FASTr™ OPTOLOGIC â SMART START™ UltraFET â
CoolFET™ FRFET™ OPTOPLANAR™ SPM™ VCX™
CROSSVOLT™ GlobalOptoisolator™ PACMAN™ STAR*POWER™
DenseTrench™ GTO™ POP™ Stealth™
DOME™ HiSeC™ Power247™ SuperSOT™-3
EcoSPARK™ I2C™ PowerTrench â SuperSOT™-6
E2CMOSTM ISOPLANAR™ QFET™ SuperSOT™-8
EnSignaTM LittleFET™ QS™ SyncFET™
FACT™ MicroFET™ QT Optoelectronics™ TinyLogic™
FACT Quiet Series™ MicroPak™ Quiet Series™ TruTranslation™
STAR*POWER is used under license
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H5