10N60/10N60F

600V N-Channel MOSFET

GENERAL DESCRIPTION
This Power MOSFET is produced using VDSS RDS(ON) ID
advanced planar stripe DMOS
600V 0.75Ω 10A
technology.This advanced technology has

been especially tailored tominimize on-state

resistance, provide superior switching

performance, and withstand high energy

pulse in the avalanche and commutation

mode. These devices are well suited for high

efficiency switched mode power supplies,

active power factor correction based on half

bridge topology.

Features
•10A, 600V, RDS(on) = 0.75Ω @VGS = 10 V Ordering Information
• Low gate charge ( typical 48nC)
PART NUMBER PACKAGE BRAND
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability 10N60/10N60F TO-220/220F 0GFD

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 10N60/10N60F

Absolute Maximum Ratings TC = 25°Cunless otherwise noted

Symbol Parameter 10N60 10N60F Units

VDSS Drain-Source Voltage 600 V

Drain Current - Continuous (TC = 25°C) 10 10 A

ID
- Continuous (TC = 100°C) 6 6 A

IDM Drain Current- Pulsed (Note 1) 40 40 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 709 mJ

EAR Repetitive Avalanche Energy (Note 1) 16.2 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

Power Dissipation (TC = 25°C) 162 52 W

PD
Derate above 25°C 1.30 0.42 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering

TL purposes, 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter 10N60 10N60F Units

RθJC Thermal Resistance, Junction-to-Case 0.77 2.4 °C/W

RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

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 10N60/10N60F

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V

∆BVDSS/ Breakdown Voltage Temperature ID = 250 µA, Referenced to

∆TJ Coefficient 25°C -- 0.7 -- V/°C

VDS = 600 V, VGS = 0 V -- -- 1 µA

IDSS Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125°C -- -- 10 µA

Gate-Body Leakage Current,

IGSSF VGS = 30 V, VDS = 0 V -- 100 nA
Forward --

Gate-Body Leakage Current,

IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA
Reverse

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID= 250 µA 2.0 -- 4.0 V

Static Drain-Source
RDS(on) VGS = 10 V, ID = 5.0 A -- 0.62 0.75 Ω
On-Resistance

Dynamic Characteristics

Ciss Input Capacitance -- 1650 -- pF

Coss Output Capacitance VDS = 25 V, VGS = 0 V, -- 165 -- pF

f = 1.0 MHz

Crss Reverse Transfer Capacitance -- 18 -- pF

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 10N60/10N60F

Switching Characteristics
td(on) Turn-On Delay Time -- 25 -- ns

tr Turn-On Rise Time -- 70 -- ns

VDD = 300 V, ID = 10.0A,
RG = 25 Ω
td(off) Turn-Off Delay Time -- 140 -- ns

tf Turn-Off Fall Time (Note 4, 5) -- 80 -- ns

Qg Total Gate Charge -- 48 -- nC

VDS = 480 V, ID = 10.0 A,

Qgs Gate-Source Charge -- 7.0 -- nC
VGS = 10 V

(Note 4, 5)
Qgd Gate-Drain Charge -- 18.0 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10.0 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 40.0 A

Drain-Source Diode Forward

VSD VGS = 0 V,IS = 10.0 A -- -- 1.4 V
Voltage

trr Reverse Recovery Time -- 430 -- ns

VGS = 0 V,IS = 10.0 A,
dIF / dt = 100 A/µs

(Note 4) 4.3
Qrr Reverse Recovery Charge -- -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 13 mH, IAS = 10.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 10.0 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

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 10N60/10N60F

Typical Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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 10N60/10N60F

Typical Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for TSP10N60M for TSF10N60M

10

8
ID, Drain Current [A]

0
25 50 75 100 125 150
TC, Case Temperature [? ]

Figure 10. Maximum Drain Current

vs Case Temperature

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 10N60/10N60F

Typical Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve

for TSP10N60M

Figure 11-2. Transient Thermal Response Curve

for TSF10N60M

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 10N60/10N60F

Gate Charge Test Circuit & Waveform

VGS
SameType
50KΩ
asDUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

R
L V
DS
V
DS 9
0%

V V
DD
GS
R
G

1
0%
V
GS
1
0V D
UT
td
(on
)
tr td
(off) tf
to
n
to
ff

Unclamped Inductive Switching Test Circuit & Waveforms

L B V DS S
1
V E
AS=---- LIAS2 --------------------
DS 2 B V DS S-V DD

B
VD SS
ID
IAS
R
G
V
DD ID(t)

1
0V D
UT V
DD V
DS(t)

tp
tp Tim
e

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 10N60/10N60F

Peak Diode Recovery dv/dt Test Circuit & Waveforms

D U T +

V D S

I S D
L

D r iv e r
R G
S am e T ype
as D U T V D D

V G S • d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d

G a te P u ls e W id th
V GS D = --------------------------
G a t e P u ls e P e r io d 10V
( D r iv e r )

IF M , B o d y D io d e F o r w a r d C u r r e n t
I S D
( D U T ) d i/d t

IR M

B o d y D io d e R e v e r s e C u r r e n t
V DS
( D U T ) B o d y D io d e R e c o v e r y d v / d t

V S D
V D D

B o d y D io d e
F o r w a r d V o lt a g e D r o p

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