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Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol Parameter Rating Units
VDS Drain-Source Voltage 600 V
VGS Gate-Source Voltage +30 V
3
ID@TC=25℃ Drain Current, VGS @ 10V 10 A
1
IDM Pulsed Drain Current 40 A
PD@TC=25℃ Total Power Dissipation 36.7 W
PD@TA=25℃ Total Power Dissipation 1.92 W
4
EAS Single Pulse Avalanche Energy 50 mJ
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃
Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 3.4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W
1
201701191
AP60WN720I
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Ensure that the junction temperature does not exceed TJmax..
4.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω
2
AP60WN720I
30 16
o 10V o
T C =25 C T C =150 C 10V
8.0V
8.0V
7.0V
7.0V
6.0V
ID , Drain Current (A)
10
0 0
0 10 20 30 40 0 10 20 30 40
0.68 4
I D =5A I D =5A
T C =25 C o V G =10V
Normalized RDS(ON)
0.64 3
RDS(ON) (Ω)
0.6 2
.
0.56 1
0.52 0
2 4 6 8 10 -100 -50 0 50 100 150
o
V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( C )
I D =250uA
8 1.6
Normalized VGS(th)
IS (A)
6 1.2
T j = 150 o C T j = 25 o C
4 0.8
2 0.4
0 0
0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150
V SD (V) o
T j , Junction Temperature ( C )
3
AP60WN720I
12
f=1.0MHz
4000
I D =5A
10
V DS =480V
VGS , Gate to Source Voltage (V)
3000
8
0.37Ω
C (pF)
6 2000
C iss
4
1000
2
C oss
C rss
0 0
0 10 20 30 40 50 0 200 400 600 800
100 1
Duty factor=0.5
Normalized Thermal Response (Rthjc)
0.1 0.1
ID (A)
0.05
1 10us
100us . 0.02
0.01 PDM
0.01 t
Single Pulse
T
0.1 1ms
10ms Duty factor = t/T
T C =25 o C 100ms
Peak Tj = PDM x Rthjc + T C
Single Pulse DC
0.01 0.001
1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10
Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance
50 2
I D =1mA
PD , Power Dissipation (W)
40 1.6
Normalized BVDSS
30 1.2
20 0.8
10 0.4
0 0
0 50 100 150 -100 -50 0 50 100 150
o
T C , Case Temperature ( o C ) T j , Junction Temperature ( C)
Fig 11. Total Power Dissipation Fig 12. Normalized BVDSS v.s. Junction
Temperature
4
AP60WN720I
MARKING INFORMATION
Part Number
60WN720
YWWSSS
5
ADVANCED POWER ELECTRONICS CORP.
SYMBOLS Millimeters
A MIN NOM MAX
E c2
A 4.20 4.55 4.90
A1 1.90 2.45 3.00
φ L5
L6 b 0.50 0.80 1.10
b1 0.85 1.18 1.50
c 0.30 0.65 1.00
c2 2.30 2.60 3.10
L4
E 9.70 10.25 10.80
L1
L 12.00 13.50 15.00
L1 11.50 12.25 13.00
L3 2.82 3.37 3.92
L4 14.70 15.60 16.50
L5 2.30 3.10 3.90
L3 L6 6.20 6.85 7.50
F A1
φ 3.00 3.20 3.40
e 2.40 2.55 2.70
b1
F 0.80 1.35 1.90
L
1.All Dimensions Are in Millimeters.
. 2.Dimension Does Not Include Mold Protrusions.
b c
TO-220CFM FOOTPRINT:
2.54mm 2.54mm
1.8mm
1.15mm