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UNISONIC TECHNOLOGIES CO., LTD
10N60 Power MOSFET
DESCRIPTION
The UTC 10N60 is a high voltage and high current power MOSFET,
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* 10A, 600V, RDS(ON) =0.73Ω@VGS =10V
* Low gate charge ( typical 44 nC) *Pb-free plating product number: 10N60L
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Normal Lead Free Plating 1 2 3
10N60-x-TA3-T 10N60L-x-TA3-T TO-220 G D S Tube
www.unisonic.com.tw 1 of 7
Copyright © 2007 Unisonic Technologies Co., Ltd QW-R502-119.A
10N60 Power MOSFET
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
10N60-A 600 V
Drain-Source Voltage VDSS
10N60-B 650 V
Gate-Source Voltage VGSS ± 30 V
Avalanche Current (Note 1) IAR 9.5 A
TC = 25°C 9.5
Continuous Drain Current ID A
TC = 100°C 3.3
Pulsed Drain Current (Note 1) IDM 38 A
Single Pulsed (Note 2) EAS 700 mJ
Avalanche Energy
Repetitive (Note 1) EAR 15.6 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Power Dissipation PD 156 W
Junction Temperature TJ +150 ℃
Operating Temperature TOPR -55 ~ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
THERMAL DATA
PARAMETER SYMBOL RATING UNIT
Junction-to-Ambient θJA 62.5 °C/W
Junction-to-Case θJC 0.8 °C/W
D.U.T. +
VDS
- L
RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test
VGS Period P. W.
D=
(Driver) P.W. Period
VGS= 10V
IRM
L
VDS
BVDSS
IAS
RD
VDD
ID(t)
VDS(t)
VDD
10V D.U.T.
tp
tp Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
TYPICAL CHARACTERISTICS(Cont.)
Drain-Source Breakdown Voltage,
(Normalized)
Maximum Safe Operating Area Maximum Drain Current vs. Case Temperature
102 10
Operation in this Area is United by RDM
10μs
8
100μs
Drain Current, ID (A)
Drain Current, ID (A)
101 1ms
10ms 6
100ms
DC
4
100
Notes:
1.TC=25℃ 2
2.TJ=150℃
3.Single Pulse
10-1 0 0
10 101 102 103 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, TC (℃)
D=0.5
0.2 NOTES:
-1 1.ZθJC(t)=2.5D/W Max
10 0.1 2.Duty Factor,D=t1/t2
3.TJW-TC=PDW-ZθJC(t)
0.05
0.02
PDW
0.01
Single pulse
t1
10-2 t2
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.