6N60

Power Mosfet

6.2 Amps, 600/650 Volts

N-CHANNEL MOSFET
DESCRIPTION
The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,
low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.

FEATURES
* RDS(ON) = 1.5Ω @VGS = 10V
* Ultra low gate charge (typical 20 nC )
* Low reverse transfer Capacitance ( CRSS = typical 10pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

SYMBOL

*Pb-free plating product number: 6N60L

ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Normal Lead Free Plating 1 2 3
6N60-x-TA3-T 6N60L-x-TA3-T TO-220 G D S Tube

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 6N60
Power Mosfet

ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage 6N60-A VDSS 600 V
6N60-B 650 V
Gate-Source Voltage VGSS ±30 V
Avalanche Current (Note 1) IAR 6.2 A
Continuous Drain Current TC = 25°C ID 6.2 A
TC = 100°C 3.9 A
Pulsed Drain Current (Note 1) IDM 24.8 A
Avalanche Energy Single Pulsed (Note 2) EAS 440 mJ
Repetitive (Note 1) EAR 13 mJ
Power Dissipation PD 62.5 W
Junction Temperature TJ +150 °C
Operating Temperature TOPR -55 ~ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATING UNIT
Junction-to-Ambient θJA 62 °C/W
Junction-to-Case θJC 2 °C/W

ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage 6N60-A BVDSS VGS = 0V, ID = 250µA 600 V
6N60-B 650 V
Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 µA
Gate- Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA
Reverse VGS = -30V, VDS = 0V -100 nA
Breakdown Voltage Temperature △BVDSS/△TJ ID = 250 µA, Referenced to 0.53 V/°C
Coefficient 25°C
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.1A 1.5 Ω
DYNAMIC CHARACTERISTICS
Turn-On Delay Time tD(ON) VDD=300V, ID =6.2A, RG =25Ω 20 50 ns
Turn-On Rise Time tR (Note 4, 5) 70 150 ns
Turn-Off Delay Time tD(OFF) 40 90 ns
Turn-Off Fall Time tF 45 100 ns
Total Gate Charge QG VDS=480V, ID=6.2A, VGS=10 V 20 25 nC
Gate-Source Charge QGS (Note 4, 5) 4.9 nC
Gate-Drain Charge QGD 9.4 nC

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 6N60
Power Mosfet

ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.2 A 1.4 V
Maximum Continuous Drain-Source Diode IS 6.2 A
Forward Current
Maximum Pulsed Drain-Source Diode ISM 24.8 A
Forward Current
Reverse Recovery Time tRR VGS = 0 V, IS = 6.2 A, 290 ns
Reverse Recovery Charge QRR dIF/dt = 100 A/µs (Note 4) 2.35 ns
1. Repetitive Rating : Pulse width limited by TJ
2. L = 16.8mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 6.2A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

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 6N60
Power Mosfet

TEST CIRCUITS AND WAVEFORMS

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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 6N60
Power Mosfet

TEST CIRCUITS AND WAVEFORMS (Cont.)

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Power Mosfet

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