AP3310GH/J-HF

RoHS-compliant Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D BVDSS -20V

▼ 2.5V Gate Drive Capability RDS(ON) 150mΩ
▼ Fast Switching Characteristic ID -10A
G
S

Description
Advanced Power MOSFETs from APEC provide the designer with the best G
D
S
combination of fast switching, low on-resistance and cost-effectiveness. TO-252(H)

This device is suited for low voltage and battery power applications.

G
D
S TO-251(J)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage - 20 V
VGS Gate-Source Voltage +12 V
ID@TC=25℃ Continuous Drain Current, VGS @ 4.5V -10 A
ID@TC=100℃ Continuous Drain Current, VGS @ 4.5V -6.2 A
1
IDM Pulsed Drain Current -24 A
PD@TC=25℃ Total Power Dissipation 25 W
Linear Derating Factor 0.01 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 5.0 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W

Data and specifications subject to change without notice 1

200902096
AP3310GH/J-HF

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/℃
2
RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-2.8A - - 150 mΩ
VGS=-2.5V, ID=-2.0A - - 250 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - - V
gfs Forward Transconductance VDS=-5V, ID=-2.8A - 4.4 - S
IDSS Drain-Source Leakage Current VDS=-20V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (T j=125 C) VDS=-16V, VGS=0V - - -250 uA
IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA
2
Qg Total Gate Charge ID=-2.8A - 6 - nC
Qgs Gate-Source Charge VDS=-6V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-5V - 0.6 - nC
2
td(on) Turn-on Delay Time VDS=-6V - 25 - ns
tr Rise Time ID=-1A - 60 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=-5V - 70 - ns
tf Fall Time RD=6Ω - 60 - ns
Ciss Input Capacitance VGS=0V - 300 - pF
Coss Output Capacitance VDS=-6V - 180 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -10 A
1
ISM Pulsed Source Current ( Body Diode ) - - -24 A
2
VSD Forward On Voltage Tj=25℃, IS=-10A, VGS=0V - - -1.2 V

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP3310GH/J-HF

24 20
-4.5V
o
T C =25 C T C =150 o C -4.5V

18 -4.0V 15 -4.0V

-ID , Drain Current (A)

-ID , Drain Current (A)

-3.5V
-3.5V
12 10

-3.0V
-3.0V

6 5
-2.5V
-2.5V
V GS = -2.0V
V GS = -2.0V

0 0
0.0 2.5 5.0 7.5 10.0 0 2 4 6 8

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

800 1.8

I D = -2.8A I D = -2.8A
T C =25 o C V GS = -4.5V
Normalized R DS(ON)

600 1.5
RDS(ON) (mΩ)

400 1.2

200 0.9

0 0.6
0 2 4 6 8 10 -50 0 50 100 150

-V GS (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

3
AP3310GH/J-HF

10 30

25
8
-ID , Drain Current (A)

20

PD (W)
6

15

10

2
5

0 0
25 50 75 100 125 150 0 50 100 150

T c , Case Temperature ( o C) T c , Case Temperature ( o C)

Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation

Case Temperature

100 1
Normalized Thermal Response (R thjc)

Duty Factor = 0.5

0.2
-ID (A)

1ms 0.1

10 0.1

0.05
PDM

t
0.02 T

10ms 0.01
Duty Factor = t/T
Peak Tj = P DM x Rthjc + TC
T C =25 °C 100ms Single Pulse
Single Pulse
1
DC 0.01
1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

-V DS (V) t , Pulse Width (s)

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

4
 AP3310GH/J-HF

f=1.0MHz
5
1000

I D =-2.8A
V DS =-6V
-VGS , Gate to Source Voltage (V)

4
Ciss

C (pF)
3
Coss

100

2
Crss

0 10
0 2 4 6 8 1 3 5 7 9 11 13

Q G , Total Gate Charge (nC) -V DS (V)

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

10 1.5

T j =150 o C T j =25 o C

1
-VGS(th) (V)
-IS(A)

0.5

0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150

-V SD (V) T j , Junction Temperature ( o C)

Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature

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AP3310GH/J-HF

VDS
RD 90%

VDS TO THE
D OSCILLOSCOPE

0.3 x RATED VDS

RG G
10%
S
VGS
-5 V VGS

td(on) tr td(off) tf

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

VG

VDS

TO THE QG
D OSCILLOSCOPE
-5V
0.3 x RATED VDS
G QGS QGD

S VGS

-1~-3mA

I ID
G

Charge Q

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform