2N65(F,B,H,G,D)S

2 Amps,650 Volts N-Channel Super Junction Power MOSFET

FEATURE
 2A,650V,RDS(ON)MAX =2.5Ω@V GS=10V/1A
 Low gate charge
 Low Ciss
 Fast switching
 100% avalanche tested TO-220AB ITO-220AB TO-262

 Improved dv/dt capability 2N65S 2N65FS 2N65HS

TO-263 TO-252 TO-251

2N65BS 2N65GS 2N65DS

Absolute Maximum Ratings(TC=25℃,unless otherwise noted)

Parameter Symbol 2N65(F,B,H,G,D)S UNIT

Drain-Source Voltage VDSS 650

V
Gate-Source Voltage VGSS ±30
Continuous Drain Current ID 2
A
Pulsed Drain Current(Note1) IDM 6
Single Pulse Avalanche Energy (Note 2) EAS 45 mJ
Avalanche Current(Note1) IAR 1 A
Repetitive Avalanche Energy (Note1) EAR 0.06 mJ
Reverse Diode dV/dt (Note 3) dv/dt 15 V/ns
Operating Junction and Storage Temperature Range TJ,T STG -55 to +150 ℃
Maximum lead temperature for soldering purposes,
TL 260 ℃
1/8"from case for 5 seconds
10 lbf·in
Mounting Torque 6-32 or M3 screw
1.1 N·m

Thermal Characteristics
TO-220/TO-262/ Units
Parameter Symbol ITO-220 TO-251/252
TO-263
Thermal resistance , Junction to Case Rth(J-c) 7.8 5.4 5.4 ℃/W
Thermal resistance , Channel to Case Rth(ch-c) 7.8 5.4 5.4 ℃/W
Thermal resistance , Channel to Ambient Rth(ch-a) 80 62 62 ℃/W
Maximum Power Dissipation TC=25℃ PD 16 23 23 W

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Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 650 － － V
Breakdown Temperature Coefficient ΔBVDSS Reference to 25℃，
－ 0.6 － V/℃
/ΔTJ ID=250uA
Zero Gate Voltage Drain Current IDSS VDS=650V,VGS=0V － － 1 μA
Gate-Body Leakage Current,Forward IGSSF VGS=30V,VDS=0V － － 1 μA
Gate-Body Leakage Current,Reverse IGSSR VGS=-30V,VDS=0V － － -1 μA
On Characteristics
Gate-Source Threshold Voltage VGS(th) VDS=V GS,ID=250uA 2 － 4 V
Drain-Source On-State Resistance RDS(on) VGS=10V,ID=2A － 2.2 2.5 Ω
Dynamic Characteristics
Input Capacitance Ciss VDS=50V,VGS=0V, － 190 － pF
Output Capacitance Coss f=1.0MHZ － 13 － pF
Reverse Transfer Capacitance Crss － 1.1 － pF

Switching Characteristics

Turn-On Delay Time td(on) VDD=380V,ID=1A, － 6 － ns

Turn-On Rise Time tr RG=50Ω － 3 － ns
Turn-Off Delay Time td(off) (Note4,5) － 65 － ns
Turn-Off Fall Time tf － 11 － ns
Total Gate Charge Qg VDS=480V,ID=2 A, － 3.2 － nC
Gate-Source Charge Qgs VGS=10V, (Note4,5) － 0.6 － nC
Gate-Drain Charge Qgd － 1.2 － nC
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current IS － － 2 A
Pulsed Diode Forward Current ISM － － 6 A
Diode Forward Voltage VSD IS=2A,V GS=0V － － 1.3 V
Reverse Recovery Time trr VGS=0V,IS=2A, － 140 － ns
Reverse Recovery Charge Qrr dIF/dt=100A/us, (Note4) － 0.65 － μC
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=50V,L=22.5mH,R g=25Ω,IAS=2A ,starling TJ=25℃.
3. ISD≤ID,dI/dt=200A/us,V DD≤BVDSS ,starting TJ=25℃.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.

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TEST CIRCUIT AND WAVEFORM

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Version1.0-2015.2 www.perfectway.cn
RATINGAND CHARACTERISTIC CURVES
6 15V TO P
14V

VGS,Gate-to-Source Voltage(V)
ID,Drain-to-Source Current(A)

5 13V 20
12V
11V 8V
10V 16
4 9V
T J =25℃

0V
12

48
3 7V

S=
D
V
2 8
6V

1 4
5V

0 0
0 5 10 15 20 25 30 0 1 2 3 4 5 6
V D S ,D rain-to-Source V oltage(V ) Q g ,To tal G ate C harge(nC )

100 1000
ISD , Reverse Drain Current(A)

C iss
100
T J =150℃ T J =25℃
Capacitance(pF)

10 V G S = 0 V ,f = 1M H z
C iss = C g s C g d ,C ds Sh orted
C oss C rss = C g d
10
C oss = C ds + C gd

1
1 C rss

V G S =0 V
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 100 200 300 400 500 600
V D S ,Source-D rain V oltage(V ) V D S ,D rain-to-Source V oltage(V )

800 3.0
ID = 1 A
On Resistance (Normalized)

750 2.5
RDS(on),Drain-to-Source
Brakdown Voltage(V)
VDS , Drain-to-Source

700 2.0

650 1.5

V G S =10 V
600 1.0

550 0.5

500 0
-60 -40 -20 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
T J , Junctio n Tem perature( ℃ ) T J , Jun ction Tem perature( ℃ )

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 Operation in this Area 10
Limited by R DS(on) Common Source
100 I D M =Limited Tc=25 ℃
Pulse Test

RDS(ON) , Rrain-Source
ID, Drain Current(A)

On-Resistance (Ω)
10
V GS =10 V
Limited by R DS(on) 1
1 100 μ s
1ms

0.1 T C =25 ℃ 10ms

T J=150 ℃
Single Pulse BVDSS Limited
0.01 0.1
1 10 100 1000 0.1 1 10 100
V D S ,Drain-to-Source Voltage(V) I D , Drain Current(V)

100 5

VTH , Gate Threshold Voltage(V)

EAS , Avalanche Energy(mJ)

80 4

60 3

40 2

Common Source
20 1 V D S =10V
I D =250uA
Pulse Test
0 0
25 50 75 100 125 150 -80 -40 0 40 80 120 140
T CH , Channel Temperature(Initial) ( ℃ ) T C , Case Temperature( ℃ )

1
Duty Cycle = 0.5
Transient Thermal Impedance
Nomalized Effective

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
0.0001 0.001 0.01 0.1 1 10
Pulse Time(s)

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PACKAGE OUTLINE DIMENSIONS

TO-220AB

L TO-220AB
I Dim Min Max
A .573(14.55) .603(15.32)
C
H B ―― .412(10.5)
C .103(2.62) .113(2.87)
G A D .140(3.56) .160(4.06)
E .510(13.0) .560(14.3)
PIN 1 2 3 F .027(0.68) .037(0.94)
G .148(3.74) .154(3.91)
H .230(5.84) .270(6.86)
D
E I .175(4.44) .185(4.86)
J J .100(2.54) .110(2.79)
F K .014(0.35) .025(0.64)
L .045(1.14) .055(1.40)
P .095(2.41) .105(2.67)

ITO-220AB

B L ITO-220AB
G I Dim Min Max
C A .571(14.5) .610(15.5)
H B .383(9.72) .406(10.3)
C .110(2.80) .126(3.20)
A
D .133(3.38) .162(4.10)
E .512(13.0) .551(14.0)
PIN 1 2 3
F .028(0.70) .035(0.90)
G .114(2.90) .138(3.50)
D H .268(6.80) .291(7.40)
E I .162(4.10) .185(4.70)
J J .102(2.60) .110(2.80)
F
K .018(0.45) .026(0.65)
P K L .097(2.46) .113(2.86)
P .890(2.25) .113(2.85)

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 TO-263

TO-263
L Dim Min Max
B
.323(8.20) .348(8.85)
C I
A

2 B .394(10.0) .413(10.5)
C .394(10.0) .402(10.2)

H D .077(1.95) .100(2.55)
.204(5.17) .227(5.77)
A E
F .027(0.68) .037(0.94)
PIN1 3 G -- .067(1.70)

D J H .046(1.17) .053(1.34)
E M I .175(4.44) .191(4.86)
G J .100(2.54) .110(2.79)
K .014(0.35) .025(0.64)
F K
.047(1.20) .055(1.40)
P L
M .000(0.00) .010(0.25)
P .095(2.41) .105(2.67)

Dimensions in inches and (millimeters)

TO-262

B TO-262
L Dim Min Max
C I A .323(8.20) .348(8.85)
B .394(10.0) .413(10.5)
C .394(10.0) .402(10.2)
H
A D .140(3.56) .160(4.06)
E .510(13.0) .560(14.3)
PIN 1 2 3
F .027(0.68) .037(0.94)
H .046(1.17) .053(1.34)
I .175(4.44) .185(4.86)
D
E J .100(2.54) .110(2.79)
J K .014(0.35) .025(0.64)
F L .045(1.14) .055(1.40)
P .095(2.41) .105(2.67)
P K

Dimensions in inches and (millimeters)

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 TO-252

L TO-252
B Dim Min Max
C I A .230(5.85) .246(6.25)
2 B .250(6.35) .264(6.75)
N C .207(5.27) .218(5.54)
H D .037(0.93) .045(1.14)
A E .106(2.70) .138(3.50)
F .028(0.72) .033(0.84)
PIN1 3
G .024(0.60) .041(1.05)
D J H .028(0.72) .043(1.10)
EM I .085(2.15) .096(2.45)
G
K J .037(0.95) .047(1.20)
F a K .018(0.45) .026(0.65)
P L .018(0.45) .024(0.60)
P .081(2.05) .094(2.40)
M .000(0.00) .006(0.15)
N -- .008(0.20)
a 0° 10°

Dimensions in inches and (millimeters)

TO-251

TO-251
L
B Dim Min Max
C I A .230(5.85) .246(6.25)
B .250(6.35) .266(6.75)
N C .207(5.27) .218(5.54)
H D .037(0.93) .045(1.14)
A E .173(4.40) .205(5.20)
PIN1 2 3 F .028(0.72) .033(0.84)
H .028(0.70) .043(1.10)
D J I .085(2.15) .096(2.45)
E J .037(0.95) .047(1.20)
F K .018(0.45) .026(0.65)
K L .018(0.45) .024(0.60)
P N -- .008(0.20)
P .081(2.05) .094(2.40)

Dimensions in inches and (millimeters)

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