UNISONIC TECHNOLOGIES CO.

, LTD
7N65A Power MOSFET

7A, 650V N-CHANNEL

POWER MOSFET

„ DESCRIPTION
The UTC 7N65A is a high voltage N-Channel enhancement
mode power field effect transistors designed to have minimize
on-state resistance, superior switching performance and withstand
high energy pulse in the avalanche and commutation mode. This
power MOSFET is well suited for high efficiency switch mode
power supply.
„ FEATURES
* RDS(ON) = 1.4Ω @VGS = 10 V
* Ultra low gate charge (typical 28 nC )
* Low reverse transfer Capacitance (CRSS= typical 12 pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
„ SYMBOL

2.Drain

1.Gate

3.Source

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
7N65AL-TA3-T 7N65AG-TA3-T TO-220 G D S Tube
7N65AL-TF1-T 7N65AG-TF1-T TO-220F1 G D S Tube
7N65AL-TF3-T 7N65AG-TF3-T TO-220F G D S Tube
Note: Pin Assignment: G: Gate D: Drain S: Source

7N65AL-TA3-T
(1)Packing Type (1) T: Tube
(2)Package Type (2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F
(3)Lead Free (3) G: Halogen Free, L: Lead Free

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7N65A Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 650 V
Gate-Source Voltage VGSS ±30 V
Avalanche Current (Note 2) IAR 7 A
Continuous Drain Current ID 7 A
Pulsed Drain Current (Note 2) IDM 28 A
Single Pulsed (Note 3) EAS 330 mJ
Avalanche Energy
Repetitive (Note 2) EAR 7.5 mJ
TO-220 65 W
Power Dissipation PD
TO-220F/TO-220F1 30 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ(MAX)
3. L = 12.05mH, IAS = 7.4A, VDD=50V, RG = 27 Ω, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-220 83.3
Junction to Ambient θJA °C/W
TO-220F/TO-220F1 62.5
TO-220 1.92
Junction to Case θJC °C/W
TO-220F/TO-220F1 4.16

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7N65A Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 650 V
Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 10 µA
Forward VGS = 30 V, VDS = 0 V 100 nA
Gate-Source Leakage Current IGSS
Reverse VGS = -30 V, VDS = 0 V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =3.5A (Note 4) 1.05 1.4 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 950 1430 pF
Output Capacitance COSS VDS=25V, VGS=0V, f=1.0 MHz 85 130 pF
Reverse Transfer Capacitance CRSS 12 18 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 16 ns
Turn-On Rise Time tR VDD=325V, ID =7A, 60 ns
Turn-Off Delay Time tD(OFF) RG =25Ω (Note 1, 2) 80 ns
Turn-Off Fall Time tF 65 ns
Total Gate Charge QG 28 42 nC
VDS=520V, ID=7A,
Gate-Source Charge QGS 5.5 8.3 nC
VGS=10 V (Note 1, 2)
Gate-Drain Charge QGD 11 17 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7A 1.4 V
Maximum Continuous Drain-Source Diode
IS 7 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 28 A
Forward Current
Reverse Recovery Time trr VGS = 0V, IS =7A, 365 ns
Reverse Recovery Charge QRR dIF / dt = 100A/μs (Note 1) 4.23 µC
Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle ≤2%
2. Essentially independent of operating temperature

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7N65A Power MOSFET

„ TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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7N65A Power MOSFET

„ TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS VDS
90%
VGS VDD
RG

10%
D.U.T. VGS
10V
tD(ON) tD(OFF)
Pulse Width≤ 1μs
tR tF
Duty Factor≤0.1%

Switching Test Circuit Switching Waveforms

QG
Same Type 10V
50kΩ as D.U.T.
12V
0.2μF 0.3μF
VDS QGS QGD

VGS

DUT
VGS
1mA

Charge

Gate Charge Test Circuit Gate Charge Waveform

BVDSS
IAS

ID(t)
VDS(t)
VDD

tp Time

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

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7N65A Power MOSFET

„ TYPICAL CHARACTERISTICS
Drain Current, ID (A)

Drain Current, ID (A)

ON Resistance vs. Drain Current Reverse Drain Current vs.

Source Drain Voltage
2.5
Note: Note:
1. Td=25°C 1. VDS=10V
Reverse Drain Current, IS (A)
ON Resistance, RDS(ON) (Ω)

2.0 2. Pulsed test 2. Pulse test

VGS=10V
101
1.5
VGS=20V

1.0
100

0.8

0 10-1
0 5 10 15 20 25 0.4 0.6 0.8 1.0 8 1.2 1.4
Drain Current, ID (A) Source Drain Voltage, VSD (V)
Gate Source Voltage, VGS (V)
Capacitance (pF)

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7N65A Power MOSFET

„ TYPICAL CHARACTERISTICS (Cont.)

Drain-Source Voltage vs.

ON-Resistance vs. Junction Temperature
Junction Temperature
Drain-Source Voltage, VDSS (Normalized)

1.2 3.0
Note: Note:

ON-Resistance, RDS(ON) (Normalized)

1. VGS = 0V 1. VGS = 10V
2. ID = 250µA 2.5 2. ID = 3.5A
1.1
2.0

1.5
1.0

1.0
0.9
0.5

0.8 0.0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, TJ (°C) Drain Current, ID (A) Junction Temperature, TJ (°C)
Drain Current, ID (A)

1m
s

VDSS MAX

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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