SPP07N60S5

SPI07N60S5

Cool MOS™ Power Transistor VDS 600 V

Feature RDS(on) 0.6 Ω
• New revolutionary high voltage technology ID 7.3 A
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge PG-TO262 PG-TO220

• Periodic avalanche rated 2

• Extreme dv/dt rated 23

1
• Ultra low effective capacitances P-TO220-3-1

• Improved transconductance

Type Package Ordering Code Marking

SPP07N60S5 PG-TO220 Q67040-S4172 07N60S5
SPI07N60S5 PG-TO262 Q67040-S4328 07N60S5

Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 °C 7.3
TC = 100 °C 4.6
Pulsed drain current, tp limited by Tjmax I D puls 14.6
Avalanche energy, single pulse EAS 230 mJ
I D = - A, V DD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.5
I D = 7.3 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR 7.3 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, T C = 25°C Ptot 83 W
Operating and storage temperature T j , T stg -55... +150 °C

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Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 20 V/ns
V DS = 480 V, ID = 7.3 A, Tj = 125 °C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1.5 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling area 2) - 35 -
Soldering temperature, wavesoldering Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche V(BR)DS V GS=0V, ID=7.3A - 700 -
breakdown voltage
Gate threshold voltage VGS(th) ID=350µΑ, VGS=V DS 3.5 4.5 5.5
Zero gate voltage drain current I DSS V DS=600V, VGS=0V, µA
Tj=25°C, - 0.5 1
Tj=150°C - - 100
Gate-source leakage current I GSS V GS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) V GS=10V, ID=4.6A, Ω
Tj=25°C - 0.54 0.6
Tj=150°C - 1.46 -
Gate input resistance RG f=1MHz, open Drain - 19 -

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SPI07N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g fs V DS≥2*I D*RDS(on)max, - 4 - S
ID=4.6A

Input capacitance Ciss V GS=0V, V DS=25V, - 970 - pF

Output capacitance Coss f=1MHz - 370 -
Reverse transfer capacitance Crss - 10 -
Effective output capacitance,3) Co(er) V GS=0V, - 30 - pF
energy related V DS=0V to 480V

Effective output capacitance,4) Co(tr) - 55 -

time related
Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 120 - ns
Rise time tr ID=7.3A, RG=12Ω - 40 -
Turn-off delay time t d(off) - 170 255
Fall time tf - 20 30

Gate Charge Characteristics

Gate to source charge Qgs VDD=350V, ID=7.3A - 7.5 - nC
Gate to drain charge Qgd - 16.5 -
Gate charge total Qg VDD=350V, ID=7.3A, - 27 35
VGS=0 to 10V

Gate plateau voltage V(plateau) VDD=350V, ID=7.3A - 8 - V

1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V
o(er) DSS.
4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

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Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25°C - - 7.3 A
forward current
Inverse diode direct current, ISM - - 14.6
pulsed
Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V
Reverse recovery time trr VR=350V, IF =IS , - 750 1275 ns
Reverse recovery charge Qrr di F/dt=100A/µs - 4.9 - µC

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance Thermal capacitance
R th1 0.024 K/W Cth1 0.00012 Ws/K
R th2 0.046 Cth2 0.0004578
R th3 0.085 Cth3 0.000645
R th4 0.308 Cth4 0.001867
R th5 0.317 Cth5 0.004795
R th6 0.112 Cth6 0.045

Tj R th1 R th,n E xternal H eatsink

T case
P tot (t)

C th1 C th2 C th,n

T am b

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1 Power dissipation 2 Safe operating area
Ptot = f (TC) ID = f ( V DS )
parameter : D = 0 , T C=25°C
100
SPP07N60S5 10 2

W A

80
10 1
70
Ptot

ID
60

50 10 0

40 tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
30
10 -1
tp = 1 ms
DC
20

10

0 10 -2 0 1 2 3
0 20 40 60 80 100 120 °C 160 10 10 10 V 10
TC VDS

3 Typ. output characteristic 4 Typ. output characteristic

ID = f (VDS); Tj=25°C ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS parameter: tp = 10 µs, VGS
25 12

20V 20V
A 12V 9V
A
10V
12V
8.5V
8
ID

ID

15 10V
8V
6
9V
10 7.5V
4
7V
8V
5 6.5V
2
7V 6V

0 0
0 5 10 15 V 25 0 5 10 15 V 25
VDS VDS

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5 Typ. drain-source on resistance 6 Drain-source on-state resistance
RDS(on)=f(ID) RDS(on) = f (Tj)
parameter: Tj=150°C, VGS parameter : ID = 4.6 A, VGS = 10 V
SPP07N60S5
3 3.4
Ω

2.8
mΩ

RDS(on)
RDS(on)

2.4

2
1.6
20V
12V
10V 1.2
9V
1.5 8.5V 0.8 98%
8V
typ
7.5V
7V 0.4
6.5V
6V
1 0
0 2 4 6 8 10 A 14 -60 -20 20 60 100 °C 180
ID Tj

7 Typ. transfer characteristics 8 Typ. gate charge

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate)
parameter: tp = 10 µs parameter: ID = 7.3 A pulsed
SPP07N60S5
24 16
A
V

20 0.2 VDS max

18 12 0.8 VDS max

16
VGS
ID

25 °C 10
14
150 °C
12 8

10
6
8

6 4

4
2
2

0 0
0 4 8 12 V 20 0 4 8 12 16 20 24 28 32 nC 38
VGS Q Gate

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9 Forward characteristics of body diode 10 Avalanche SOA
IF = f (VSD) IAR = f (tAR)
parameter: Tj , tp = 10 µs par.: Tj ≤ 150 °C
2 SPP07N60S5
10 8

A
A

6
1
10

IAR
5
IF

T j(START) =25°C

3
10 0 T j(START) =125°C

Tj = 25 °C typ
2
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%) 1

10 -1 0 -3 -2 -1 0 1 2 4
0 0.4 0.8 1.2 1.6 2 2.4 V 3 10 10 10 10 10 10 µs 10
VSD tAR

11 Avalanche energy 12 Drain-source breakdown voltage

EAS = f (Tj) V(BR)DSS = f (Tj)
par.: ID = - A, VDD = 50 V
SPP07N60S5
260 720
mJ
V
220

200 680
V(BR)DSS

180
660
EAS

160

140 640

120
620
100
600
80

60 580
40
560
20

0 540
20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 180
Tj Tj

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SPI07N60S5
13 Avalanche power losses 14 Typ. capacitances
PAR = f (f ) C = f (VDS)
parameter: E AR=0.5mJ parameter: V GS=0V, f=1 MHz
300 10 4

pF
W
Ciss
10 3
PAR

200

C
150 10 2
Coss

100

10 1
Crss
50

0 4 5 6
10 0
10 10 MHz 10 0 100 200 300 400 V 600

f VDS

15 Typ. Coss stored energy 16 Typ. gate threshold voltage

Eoss=f(VDS) VGS(th) = f (Tj)
parameter: V GS = VDS
5.5
µJ

4.5

4
Eoss

3.5

2.5

1.5

0.5

0
0 100 200 300 400 V 600
VDS

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Definition of diodes switching characteristics

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PG-TO220-3-1, PG-TO220-3-21

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PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)

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D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

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characteristics.

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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

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written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
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Rev. 2.7 Page 12 2009-11-27