SPB17N80C3

CoolMOS® Power Transistor

Product Summary
Features
V DS 800 V
• new revolutionary high voltage technology
R DS(on)max @ Tj = 25°C 0.29 Ω
• Extreme dv/dt rated
Q g,typ 91 nC
• High peak current capability

• Qualified according to JEDEC1) for target applications

PG-TO263
• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

• Ultra low effective capacitances

CoolMOS C3 designed for:

• Industrial application with high DC bulk voltage

• Switching Application (Active Clamp Forward Topology)

Type Package Marking

SPB17N80C3 PG-TO263 17N80C3

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25 °C 17 A

T C=100 °C 11

Pulsed drain current2) I D,pulse T C=25 °C 51

Avalanche energy, single pulse E AS I D=3.4 A, V DD=50 V 670 mJ

Avalanche energy, repetitive t AR2),3) E AR I D=17 A, V DD=50 V 0.5

Avalanche current, repetitive t AR2),3) I AR 17 A

MOSFET dv /dt ruggedness dv /dt V DS=0…640 V 50 V/ns

Gate source voltage V GS static ±20 V

AC (f >1 Hz) ±30

Power dissipation P tot T C=25 °C 227 W

Operating and storage temperature T j, T stg -55 ... 150 °C

Rev. 2.3 page 1 2007-11-28

 SPB17N80C3

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous diode forward current IS 17 A

T C=25 °C
Diode pulse current 2) I S,pulse 51

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 0.55 K/W

SMD version, device
R thJA on PCB, minimal - - 62
footprint
Thermal resistance, junction -
ambient SMD version, device
on PCB, 6 cm2 cooling - 35 -
area4)

Soldering temperature, reflow 1.6 mm (0.063 in.)

T sold - - 260 °C
soldering, MSL1 from case for 10 s

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 800 - - V

Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=17 A - 870 -

Gate threshold voltage V GS(th) V DS=V GS, I D=1.0 mA 2.1 3 3.9

V DS=800 V, V GS=0 V,
Zero gate voltage drain current I DSS - - 25 µA
T j=25 °C

V DS=800 V, V GS=0 V,
- 150 -
T j=150 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA

V GS=10 V, I D=11 A,
Drain-source on-state resistance R DS(on) - 0.25 0.29 Ω
T j=25 °C

V GS=10 V, I D=11 A,
- 0.67 -
T j=150 °C

Gate resistance RG f =1 MHz, open drain - 0.85 - Ω

Rev. 2.3 page 2 2007-11-28

 SPB17N80C3

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss V GS=0 V, V DS=100 V, - 2300 - pF

Output capacitance C oss f =1 MHz - 100 -

Effective output capacitance, energy

C o(er) - 72 -
related5)
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
C o(tr) - 210 -
related6)

Turn-on delay time t d(on) - 45 - ns

V DD=400 V,
Rise time tr V GS=0/10 V, I D=17 A, - 18 -

Turn-off delay time t d(off) R G=4.7 Ω, - 85 -

Tj = 125°C
Fall time tf - 15 -

Gate Charge Characteristics

Gate to source charge Q gs - 12 - nC

Gate to drain charge Q gd V DD=640 V, I D=17 A, - 48 -

Qg V GS=0 to 10 V
Gate charge total - 91 177

Gate plateau voltage V plateau - 5.5 - V

Reverse Diode

V GS=0 V, I F=IS,
Diode forward voltage V SD - 1 1.2 V
T j=25 °C

Reverse recovery time t rr - 550 - ns

V R=400 V, I F=I S,
Reverse recovery charge Q rr - 15 - µC
di F/dt =100 A/µs
Peak reverse recovery current I rrm - 51 - A

1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
is vertical without blown air
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

Rev. 2.3 page 3 2007-11-28

 SPB17N80C3
1 Power dissipation 2 Safe operating area
P tot=f(T C) I D=f(V DS); T C=25 °C; D =0
parameter: t p

240 102
limited by on-state
resistance

200 1 µs
10 µs

160 101 100 µs

1 ms
P tot [W]

I D [A]
120
10 ms
DC

80 100

40

0 10-1
0 25 50 75 100 125 150 1 10 100 1000
T C [°C] V DS [V]

3 Max. transient thermal impedance 4 Typ. output characteristics

ZthJC=f(tP) I D=f(V DS); T j=25 °C
parameter: D=t p/T parameter: V GS

100 60

20 V

50
10 V

0.5

40
Z thJC [K/W]

0.2
I D [A]

10-1 30
0.1 6.5 V

0.05

0.02 20
6V

0.01
5.5 V
single pulse 10
5V

10-2 0
10-5 10-4 10-3 10-2 10-1 0 5 10 15 20 25
t p [s] V DS [V]

Rev. 2.3 page 4 2007-11-28

 SPB17N80C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C
parameter: V GS parameter: V GS

35 1.4

20 V

30 1.3
10 V

6V
25 1.2

R DS(on) [Ω]
20 1.1
I D [A]

5.5 V

15 1
5V

10 0.9
4.5 V 5V
4V
4.5 V
6.5 V
6V
5 0.8
10 V

20 V

0 0.7
0 5 10 15 20 25 0 5 10 15 20
V DS [V] I D [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R DS(on)=f(T j); I D=11 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j

0.8 60

25 °C
50

0.6

40
R DS(on) [Ω]

I D [A]

0.4 30
98 %

150 °C
typ
20

0.2

10

0 0
-60 -20 20 60 100 140 180 0 2 4 6 8 10
T j [°C] V GS [V]

Rev. 2.3 page 5 2007-11-28

 SPB17N80C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=17 A pulsed I F=f(V SD)
parameter: V DD parameter: T j

10 102

150°C (98%)

8
160 V
25 °C

640 V 25°C (98°C)

101
6 150 °C
V GS [V]

I F [A]
4
100

0 10-1
0 20 40 60 80 100 0 0.5 1 1.5 2
Q gate [nC] V SD [V]

11 Avalanche energy 12 Drain-source breakdown voltage

E AS=f(T j); I D=3.4 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA

700 960

600 920

500 880
V BR(DSS) [V]

400 840
E AS [mJ]

300 800

200 760

100 720

0 680
25 50 75 100 125 150 -60 -20 20 60 100 140 180
T j [°C] T j [°C]

Rev. 2.3 page 6 2007-11-28

 SPB17N80C3
13 Typ. capacitances 14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS)

104 18

Ciss 16

14
103

12

E oss [µJ]
10
C [pF]

Coss
102
8

101
4
Crss

100 0
0 100 200 300 400 500 0 100 200 300 400 500 600 700 800
V DS [V] V DS [V]

Rev. 2.3 page 7 2007-11-28

 SPB17N80C3

Definition of diode switching characteristics

Rev. 2.3 page 8 2007-11-28

 SPB17N80C3

PG-TO263: Outline

Rev. 2.3 page 9 2007-11-28

 Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.

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The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
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contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the use
or other persons may be endangered.

Rev. 2.3 page 10 2007-11-28