BSC079N03LSC G

OptiMOS™3 Power-MOSFET
Product Summary
Features
V DS 30 V
• Fast switching MOSFET for SMPS
R DS(on),max 7.9 mΩ
• Optimized technology for DC/DC converters
ID 50 A
• Improved switching behaviour
PG-TDSON-8
• Qualified according to JEDEC1) for target applications

• N-channel; Logic level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

• Superior thermal resistance

• Avalanche rated

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type Package Marking

BSC079N03LSC G PG-TDSON-8 079N03LS

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID V GS=10 V, T C=25 °C 50 A

V GS=10 V, T C=100 °C 32

V GS=4.5 V, T C=25 °C 39

V GS=4.5 V,
25
T C=100 °C

V GS=10 V, T A=25 °C,

14
R thJA=50 K/W 2)

Pulsed drain current3) I D,pulse T C=25 °C 200

Avalanche current, single pulse 4) I AS T C=25 °C 35

Avalanche energy, single pulse E AS I D=30 A, R GS=25 Ω 10 mJ

Gate source voltage V GS ±20 V

1)
J-STD20 and JESD22

Rev. 2.2 page 1 2009-10-23

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Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Power dissipation P tot T C=25 °C 30 W

T A=25 °C,
2.5
R thJA=50 K/W 2)

Operating and storage temperature T j, T stg -55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC bottom - - 4.1 K/W

top - - 20

Device on PCB R thJA 6 cm2 cooling area2) - - 50

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=250 µA 1 - 2.2

V DS=30 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 µA
T j=25 °C

V DS=30 V, V GS=0 V,
- 10 100
T j=125 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA

Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 10.2 12.7 mΩ

V GS=10 V, I D=30 A - 6.6 7.9

Gate resistance RG - 3.0 - Ω

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 28 55 - S
I D=30 A

2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information

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Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 1200 1600 pF

V GS=0 V, V DS=15 V,
Output capacitance C oss - 440 590
f =1 MHz
Reverse transfer capacitance Crss - 22 -

Turn-on delay time t d(on) - 3.0 - ns

Rise time tr V DD=15 V, V GS=10 V, - 2.4 -

Turn-off delay time t d(off) I D=30 A, R G=1.6 Ω - 14 -

Fall time tf - 2.4 -

Gate Charge Characteristics 5)

Gate to source charge Q gs - 3.7 - nC

Gate charge at threshold Q g(th) - 1.8 -

Gate to drain charge Q gd V DD=15 V, I D=30 A, - 1.7 -

Q sw V GS=0 to 4.5 V
Switching charge - 3.6 -

Gate charge total Qg - 6.8 9.1

Gate plateau voltage V plateau - 3.4 - V

V DD=15 V, I D=30 A,
Gate charge total Qg - 14 19
V GS=0 to 10 V

V DS=0.1 V,
Gate charge total, sync. FET Q g(sync) - 5.9 - nC
V GS=0 to 4.5 V

Output charge Q oss V DD=15 V, V GS=0 V - 11 -

Reverse Diode

Diode continuous forward current IS - - 28 A

T C=25 °C
Diode pulse current I S,pulse - - 200

V GS=0 V, I F=30 A,
Diode forward voltage V SD - 0.9 - V
T j=25 °C

V R=15 V, I F=I S,
Reverse recovery charge Q rr - - 10 nC
di F/dt =400 A/µs

4)
See figure 13 for more detailed information
5)
See figure 16 for gate charge parameter definition

Rev. 2.2 page 3 2009-10-23

 BSC079N03LSC G
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS≥10 V

35 60

30
50

25
40

20
P tot [W]

I D [A]
30

15

20
10

10
5

0 0
0 40 80 120 160 0 40 80 120 160
T C [°C] T C [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p)
parameter: t p parameter: D =t p/T

103 10

limited by on-state
resistance 1 µs
0.5
2
10 10 µs

1 0.2
100 µs
0.1
Z thJC [K/W]
I D [A]

DC
101 0.05

0.02

1 ms 0.01
0.1
single pulse
100 10 ms

10-1 0.01 0 0 0 0 0 0 1

10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100
V DS [V] t p [s]

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5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C
parameter: V GS parameter: V GS

150 28
10 V
5V
3V
24

20
4.5 V
100 3.2 V

R DS(on) [mΩ]
16
3.5 V
I D [A]

4V

12
4V

50 4.5 V
5V
8
10 V

3.5 V

4
3.2 V

3V
2.8 V
0 0
0 1 2 3 0 10 20 30 40 50
V DS [V] I D [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
parameter: T j

100 120

100
80

80
60
g fs [S]
I D [A]

60

40

40

20
20
150 °C
25 °C

0 0
0 1 2 3 4 5 0 40 80 120 160
V GS [V] I D [A]

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9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA

16 2.5

2
12
R DS(on) [mΩ]

1.5

V GS(th) [V]
98 %

typ
1

4
0.5

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [°C] T j [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

104 1000

25 °C 150 °C, 98%

103
Ciss

100
Coss
C [pF]

I F [A]

102
150 °C

Crss 25 °C, 98%

10

101

100 1
0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0
V DS [V] V SD [V]

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13 Avalanche characteristics 14 Typ. gate charge

I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=30 A pulsed

parameter: T j(start) parameter: V DD

100 12

15 V

10 6V
24 V

25 °C
8

V GS [V]
I AV [A]

10 6
100 °C

125 °C

1 0
1 10 100 1000 0 4 8 12 16
t AV [µs] Q gate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

34
V GS

32 Qg

30
V BR(DSS) [V]

28

26
V g s(th)

24

22 Q g(th) Q sw Q g ate

Q gs Q gd
20
-60 -20 20 60 100 140 180
T j [°C]

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Package Outline PG-TDSON-8

PG-TDSON-8: Outline

Footprint
Dimensions in mm

Rev. 2.2 page 8 2009-10-23

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Package Outline

PG-TDSON-8: Tape

Dimensions in mm

Rev. 2.2 page 9 2009-10-23

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Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

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contact the nearest Infineon Technologies Office www.infineon.com

Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
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Rev. 2.2 page 10 2009-10-23