Type

IPP040N06N

OptiMOSTM Power-Transistor
Features Product Summary
• Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V
• 100% avalanche tested RDS(on),max 4.0 mW
• Superior thermal resistance ID 80 A
• N-channel QOSS nC
44
1)
• Qualified according to JEDEC for target applications QG(0V..10V) nC
38
• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21 PG-TO220-3

Type Package Marking

IPP040N06N PG-TO220-3 040N06N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID V GS=10 V, T C=25 °C 80 A

V GS=10 V, T C=100 °C 80

V GS=10 V, T C=25 °C,

20
R thJA =50K/W

Pulsed drain current2) I D,pulse T C=25 °C 320

Avalanche energy, single pulse3) E AS I D=80 A, R GS=25 W 70 mJ

Gate source voltage V GS ±20 V

1)
J-STD20 and JESD22
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.

Rev.2.2 page 1 2012-12-20

 IPP040N06N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Power dissipation P tot T C=25 °C 107 W

T A=25 °C,
3.0
R thJA=50 K/W

Operating and storage temperature T j, T stg -55 ... 175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 1.4 K/W

Device on PCB R thJA minimal footprint - - 62

6 cm² cooling area4) - - 40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=50 µA 2.1 2.8 3.3

V DS=60 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.5 1 µA
T j=25 °C

V DS=60 V, V GS=0 V,
- 10 100
T j=125 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA

Drain-source on-state resistance R DS(on) V GS=10 V, I D=80 A - 3.6 4.0 mW

V GS=6 V, I D=20 A - 4.7 6.0

Gate resistance RG - 1.3 1.95 W

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 60 120 - S
I D=80 A

Rev.2.2 page 2 2012-12-20

 IPP040N06N

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 2700 3375 pF

V GS=0 V, V DS=30 V,
Output capacitance C oss - 670 838
f =1 MHz
Reverse transfer capacitance Crss - 28 56

Turn-on delay time t d(on) - 19 - ns

Rise time tr V DD=30 V, V GS=10 V, - 16 -

Turn-off delay time t d(off) I D=80 A, R G,ext=3 W - 30 -

Fall time tf - 9 -

Gate Charge Characteristics5)

Gate to source charge Q gs - 13 - nC

Gate charge at threshold Q g(th) - 8 -

Gate to drain charge Q gd V DD=30 V, I D=80 A, - 7 9

Q sw V GS=0 to 10 V
Switching charge - 13 -

Gate charge total Qg - 38 44

Gate plateau voltage V plateau - 4.9 - V

V DS=0.1 V,
Gate charge total, sync. FET Q g(sync) - 33 - nC
V GS=0 to 10 V

Output charge Q oss V DD=30 V, V GS=0 V - 44 -

Reverse Diode

Diode continuous forward current IS - - 80 A

T C=25 °C
Diode pulse current I S,pulse - - 320

V GS=0 V, I F=80 A,
Diode forward voltage V SD - 1.0 1.2 V
T j=25 °C

Reverse recovery time t rr V R=30 V, I F=80 A, - 34 54 ns

Q rr di F/dt =100 A/µs

Reverse recovery charge - 34 - nC
5)
See figure 16 for gate charge parameter definition

Rev.2.2 page 3 2012-12-20

 IPP040N06N
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS≥10 V

120 100

100
80

80
60
Ptot [W]

ID [A]
60

40
40

20
20

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200

TC [°C] TC [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p)
parameter: t p parameter: D =t p/T

103 10
limited by on-state
resistance
1 µs

10 µs

102

100 µs
1
0.5
ZthJC [K/W]
ID [A]

1 ms 0.2
101
10 ms
0.1
DC
0.05
0.02
10-1
0.01

100 single pulse

10-1 10-2
10-1 100 101 102 10-5 10-4 10-3 10-2 10-1 1
VDS [V] tp [s]

Rev.2.2 page 4 2012-12-20

 IPP040N06N
5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C
parameter: V GS parameter: V GS

320 8
5V 5.5 V 6V
10 V

280 7V 7

240 6
6V

200 5

RDS(on) [mW]
7V
ID [A]

160 4
5.5 V
10 V
120 3

80 5V 2

40 1

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 80 160 240 320
VDS [V] ID [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
parameter: T j

320 150

280

240

100
200
gfs [S]
ID [A]

160

120
50

80

40
175 °C
25 °C

0 0
0 2 4 6 8 0 20 40 60 80
VGS [V] ID [A]

Rev.2.2 page 5 2012-12-20

 IPP040N06N
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=80 A; V GS=10 V V GS(th)=f(T j); V GS=V DS

8 5
7.5
7
6.5
4
6
5.5
5 max
RDS(on) [mW]

3
4.5 500 mA

VGS(th) [V]
4 typ
50 µA
3.5
2
3
2.5
2
1.5 1
1
0.5
0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj [°C] Tj [°C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

104 10000

103

Ciss

103 1000

102

Coss
C [pF]

IF [A]

25 °C
102 100

101
175 °C

Crss

101 10

100
0 20 40 60 0 0.5 1 1.5 2

VDS [V] VSD [V]

Rev.2.2 page 6 2012-12-20

 IPP040N06N
13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=80 A pulsed
parameter: T j(start) parameter: V DD

100 12

30 V
10
25 °C

8 12 V
100 °C
48 V
125 °C

VGS [V]
IAV [A]

10 6

1 0
1 10 100 1000 0 10 20 30 40 50
tAV [µs] Qgate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

70
V GS

Qg
66

62
VBR(DSS) [V]

58 V gs(th)

54
Q g(th) Q sw Q gate

Q gs Q gd
50
-60 -20 20 60 100 140 180

Tj [°C]

Rev.2.2 page 7 2012-12-20

 IPP040N06N

Package Outline PG-TO220-3

Rev.2.2 page 8 2012-12-20

 IPP040N06N

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.

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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

Rev.2.2 page 9 2012-12-20