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Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 °C 20
TC = 100 °C 13
Pulsed drain current, tp limited by Tjmax I D puls 40
Avalanche energy, single pulse EAS 690 mJ
I D = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1
I D = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR 20 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, T C = 25°C Ptot 208 W
Operating and storage temperature T j , T stg -55... +150 °C
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 20 V/ns
V DS = 480 V, ID = 20 A, Tj = 125 °C
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 0.6 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 50
Soldering temperature, Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
3C
o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.
Tj E xternal H eatsink
R th1 R th,n T case
P tot (t)
T am b
200
180 10 1
160
Ptot
ID
140
120 10 0
tp = 0.001 ms
100
tp = 0.01 ms
80 tp = 0.1 ms
tp = 1 ms
60 10 -1 DC
40
20
0 10 -2 0 1 2 3
0 20 40 60 80 100 120 °C 160 10 10 10 V 10
TC VDS
50 10V
ID
45
40
10 -2 D = 0.5
D = 0.2 35
D = 0.1 9V
30
D = 0.05
D = 0.02 25
-3 D = 0.01
10 20
single pulse 8V
15
10
7V
5
10 -4 -7 -6 -5 -4 -3 -2 0 0
10 10 10 10 10 10 s 10 0 5 10 15 20 V 30
tp VDS
RDS(on)
25 8.5V
1.1 9V
8.5V
ID
10V
20 1 12V
20V
8V 0.9
15 0.8
7.5V
0.7
10 7V
0.6
6.5V
0.5
5
6V
0.4
0 0.3
0 5 10 15 V 25 0 5 10 15 20 25 30 A 40
VDS ID
60
0.9
55
25°C
RDS(on)
0.8 50
150°C
0.7 45
ID
40
0.6
35
0.5
30
0.4 25
0.3 20
98%
15
0.2
typ
10
0.1
5
0 0
-60 -20 20 60 100 °C 180 0 5 10 V 20
Tj VGS
V
A
0.2 VDS max
10 1
VGS
10
IF
8
6
10 0
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2 Tj = 150 °C (98%)
0 10 -1
0 20 40 60 80 nC 120 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD
A 600
550
500
EAS
IAR
450
400
10
350
Tj(START)=25°C 300
250
5 200
150
Tj(START)=125°C
100
50
0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 µs 10 20 40 60 80 100 120 °C 160
tAR Tj
W
680
V(BR)DSS
PAR
660
300
640
620
200
600
580
100
560
540 0 4 5 6
-60 -20 20 60 100 °C 180 10 10 Hz 10
Tj f
12
10 4
11
Ciss
10
Eoss
9
10 3
C
7
Coss 6
10 2
5
4
Crss
10 1 3
1
10 0 0
0 100 200 300 400 V 600 0 100 200 300 400 V 600
VDS VDS
P-TO-247-3-1
15.9
6.35 5.03
ø3.61 2.03
4.37
20˚
5.94
6.17
9.91
20.9
D 7 5˚
2.97 x 0.127
41.22
1.75
D
16
1.14
0.243
1.2 0.762 MAX.
2 2.4 +0.05
2.92
5.46
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All Rights Reserved.
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