Advanced Small Signal MOSFET 2N7002MTF

FEATURES
BVDSS = 60 V
! Lower RDS(on)
! Improved Inductive Ruggedness
RDS(on) = 5.0 Ω
! Fast Switching Times ID = 200 mA
! Lower Input Capacitance
! Extended Safe Operating Area
! Improved High Temperature Reliability
SOT-23

Product Summary 1.Gate 2. Source 3. Drain

Part Number BVDSS RDS(on) ID

2N7002 60V 5.0Ω 115mA

Absolute Maximum Ratings

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 60 V
Continuous Drain Current (TC=25℃) 115
ID mA
Continuous Drain Current (TC=100℃) 73
IDM Drain Current-Pulsed ① 800 mA
VGS Gate-to-Source Voltage ±20 V
Total Power Dissipation (TC=25℃) 0.2 W
PD
Linear Derating Factor 0.16 W/℃
Operating Junction and
TJ , TSTG - 55 to +150 ℃
Storage Temperature Range

Thermal Resistance
Symbol Characteristic Typ. Max. Units
RθJA Junction-to-Ambient -- 62.5 ℃/W

Rev. A1
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2N7002MTF Small Signal MOSFET

Electrical Characteristics (TC=25℃ unless otherwise specified)

Symbol Characteristic Min. Typ. Max. Units Test Condition

BVDSS Drain-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250µA

VGS(th) Gate Threshold Voltage 1.0 - 2.5 V VDS = VGS, ID = 250µA

Gate-Source Leakage, Forward - - 100 VGS = 20V
IGSS nA
Gate-Source Leakage, Reverse - - -100 VGS = -20V

- - 1.0 VGS = 40V

IDSS Drain-to-Source Leakage Current µA
- - 500 VGS = 40V, TC = 125℃
ID(ON) On-State Drain-Source Current 0.5 - - A VDS = 10V, VGS = 10V
Static Drain-Source
RDS(on) - - 5.0 Ω VGS = 10V, ID = 0.5A
On-State Resistance ②

gfs Forward Transconductance ② 0.08 - - S VDS = 15V, ID = 0.2A

Ciss Input Capacitance - - 50

VDS = 25V, VGS = 0V,
Coss Output Capacitance - - 25 pF
f = 1.0MHz
Crss Reverse Transfer Capacitance - - 5
td(on) Turn-On Delay Time - - 20
tr - - VDD = 30V, ID = 0.2A
Rise Time -
ns RG = 25Ω
td(off) Turn-Off Delay Time - - 20
②③
tf Fall Time - - -

Source-Drain Diode Ratings and Characteristics

Symbol Characteristic Min. Typ. Max. Units Test Condition
IS Continuous Source Current - - 115 mA Integral reverse pn-diode
ISD Pulse Source Current ① - - 800 mA In the MOSFET

TA = 25 ℃, IS = 115mA
VSD Diode Forward Voltage ② - - 1.5 V
VGS = 0V

Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
③ Essentially Independent of Operating Temperature
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Small Signal MOSFET 2N7002MTF
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2N7002MTF Small Signal MOSFET