SPP03N60S5

SPB03N60S5

Cool MOS™ Power Transistor VDS 600 V

Feature RDS(on) 1.4 Ω
• New revolutionary high voltage technology ID 3.2 A
• Ultra low gate charge
• Periodic avalanche rated P-TO263-3-2 P-TO220-3-1

• Extreme dv/dt rated 2

• Ultra low effective capacitances 23

1

• Improved transconductance P-TO220-3-1

Type Package Ordering Code Marking

SPP03N60S5 P-TO220-3-1 Q67040-S4184 03N60S5
SPB03N60S5 P-TO263-3-2 Q67040-S4197 03N60S5

Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 °C 3.2
TC = 100 °C 2
Pulsed drain current, tp limited by Tjmax I D puls 5.7
Avalanche energy, single pulse EAS 100 mJ
I D = 2.4 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.2
I D = 3.2 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR 3.2 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, T C = 25°C Ptot 38 W
Operating and storage temperature T j , T stg -55... +150 °C

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Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 20 V/ns
V DS = 480 V, ID = 3.2 A, Tj = 125 °C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 3.3 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling area 2) - 35 -
Soldering temperature, Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s 3)

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche V(BR)DS VGS=0V, ID=3.2A - 700 -
breakdown voltage
Gate threshold voltage VGS(th) ID=135µΑ, VGS=V DS 3.5 4.5 5.5
Zero gate voltage drain current IDSS VDS=600V, VGS=0V, µA
Tj=25°C, - 0.5 1
Tj=150°C - - 70
Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=2A, Ω
Tj=25°C - 1.26 1.4
Tj=150°C - 3.4 -

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Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g fs V DS≥2*I D*RDS(on)max, - 1.8 - S
ID=2A

Input capacitance Ciss V GS=0V, V DS=25V, - 420 - pF

Output capacitance Coss f=1MHz - 150 -
Reverse transfer capacitance Crss - 3.6 -
Turn-on delay time t d(on) V DD=350V, V GS=0/10V, - 35 ns
Rise time tr ID=3.2A, RG=20Ω - 25 -
Turn-off delay time t d(off) - 40
Fall time tf - 15 22.5

Gate Charge Characteristics

Gate to source charge Qgs VDD=350V, ID=3.2A - 3.5 - nC
Gate to drain charge Qgd - 7 -
Gate charge total Qg VDD=350V, ID=3.2A, - 12.4 16
VGS=0 to 10V

Gate plateau voltage V(plateau) VDD=350V, ID=3.2A - 8 - V

1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3Soldering temperature for TO-263: 220°C, reflow

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Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25°C - - 3.2 A
forward current
Inverse diode direct current, ISM - - 5.7
pulsed
Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V
Reverse recovery time trr VR=350V, IF =IS , - 1000 1700 ns
Reverse recovery charge Qrr diF/dt=100A/µs - 2.3 - µC

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance Thermal capacitance
R th1 0.054 K/W Cth1 0.00005232 Ws/K
R th2 0.103 Cth2 0.0002034
R th3 0.178 Cth3 0.0002963
R th4 0.757 Cth4 0.0009103
R th5 0.682 Cth5 0.002084
R th6 0.202 Cth6 0.024

Tj E xternal H eatsink
R th1 R th,n T case
P tot (t)

C th1 C th2 C th,n

T am b

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1 Power dissipation 2 Safe operating area
Ptot = f (TC) ID = f ( V DS )
parameter : D = 0 , T C=25°C
40
SPP03N60S5
10 1

W
A

32

28
10 0
Ptot

ID
24

20

16
10 -1 tp = 0.001 ms
12 tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
8
DC

0 10 -2 0 1 2 3
0 20 40 60 80 100 120 °C 160 10 10 10 V 10
TC VDS

3 Transient thermal impedance 4 Typ. output characteristic

ZthJC = f (t p) ID = f (VDS); Tj=25°C
parameter: D = tp/T parameter: tp = 10 µs, VGS
1
10 10

A
K/W
10V
8 20V
12V
7
10 0
ZthJC

ID

6
9V

5
8.5V
4
10 -1 8V
3

7.5V
2
7V
1 6.5V

10 -2 -5 -4 -3 -2 -1 0 0
10 10 10 10 10 s 10 0 5 10 15 V 25
tp VDS

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5 Drain-source on-state resistance 6 Typ. transfer characteristics
RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 2 A, VGS = 10 V parameter: tp = 10 µs
SPP03N60S5
8 8

Ω A

6 6
RDS(on)

ID
5 5

4 4

3 3

2 98% 2

typ
1 1

0 0
-60 -20 20 60 100 °C 180 0 4 8 12 V 20
Tj VGS

7 Typ. gate charge 8 Forward characteristics of body diode

VGS = f (QGate) IF = f (VSD)
parameter: ID = 3.2 A pulsed parameter: Tj , tp = 10 µs
16
SPP03N60S5
10 1 SPP03N60S5

V
A
0.2 VDS max

12 0.8 VDS max

10 0
VGS

10
IF

6
10 -1
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2 Tj = 150 °C (98%)

0 10 -2
0 2 4 6 8 10 12 14 16 nC 19 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD

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9 Avalanche SOA 10 Avalanche energy
IAR = f (tAR) EAS = f (Tj)
par.: Tj ≤ 150 °C par.: ID = 2.4 A, V DD = 50 V
3.5 120

A
mJ

Tj(START) =25°C
2.5
80

EAS
IAR

60

1.5 Tj(START) =125°C

40
1

20
0.5

0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 µs 10 20 40 60 80 100 120 °C 160
tAR Tj

11 Drain-source breakdown voltage 12 Typ. capacitances

V(BR)DSS = f (Tj) C = f (VDS)
parameter: V GS=0V, f=1 MHz
SPP03N60S5 10 4
720

V pF

680 10 3
V(BR)DSS

Ciss
660
C

640
10 2
Coss
620

600

10 1
580

560 Crss

540 10 0
-60 -20 20 60 100 °C 180 0 10 20 30 40 50 60 70 80 V 100
Tj VDS

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Definition of diodes switching characteristics

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P-TO-220-3-1
B
10 ±0.4 4.44
A
3.7 ±0.2 1.27±0.13
2.8 ±0.2
15.38 ±0.6

0.05

9.98 ±0.48
13.5 ±0.5
5.23 ±0.9

0.5 ±0.1
3x
0.75 ±0.1 2.51±0.2
1.17 ±0.22
2x 2.54
0.25 M A B C

All metal surfaces tin plated, except area of cut.

Metal surface min. x=7.25, y=12.3

P-TO-263-3-2 (D 2-PAK)

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Published by
Infineon Technologies AG,
Bereichs Kommunikation
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D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

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Rev. 2.1 Page 10 2004-03-30

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