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SPD03N60S5
• Improved transconductance
1
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 °C 3.2
TC = 100 °C 2
Pulsed drain current, tp limited by Tjmax I D puls 5.7
Avalanche energy, single pulse EAS 100 mJ
I D = 2.4 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.2
I D = 3.2 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR 3.2 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, T C = 25°C Ptot 38 W
Operating and storage temperature T j , T stg -55... +150 °C
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 3.3 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 75
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm2 cooling area 2) - - 50
Soldering temperature, *) Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
T am b
W
A
32
28
10 0
Ptot
ID
24
20
16
10 -1 tp = 0.001 ms
12 tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
8
DC
0 10 -2 0 1 2 3
0 20 40 60 80 100 120 °C 160 10 10 10 V 10
TC VDS
A
K/W
10V
8 20V
12V
7
10 0
ZthJC
ID
6
9V
5
8.5V
4
10 -1 8V
3
7.5V
2
7V
1 6.5V
10 -2 -5 -4 -3 -2 -1 0 0
10 10 10 10 10 s 10 0 5 10 15 V 25
tp VDS
Ω A
6 6
RDS(on)
ID
5 5
4 4
3 3
2 98% 2
typ
1 1
0 0
-60 -20 20 60 100 °C 180 0 4 8 12 V 20
Tj VGS
V
A
0.2 VDS max
10 0
VGS
10
IF
6
10 -1
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2 Tj = 150 °C (98%)
0 10 -2
0 2 4 6 8 10 12 14 16 nC 19 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD
A
mJ
Tj(START) =25°C
2.5
80
EAS
IAR
60
40
1
20
0.5
0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 µs 10 20 40 60 80 100 120 °C 160
tAR Tj
V pF
680 10 3
V(BR)DSS
Ciss
660
C
640
10 2
Coss
620
600
10 1
580
560 Crss
540 10 0
-60 -20 20 60 100 °C 180 0 10 20 30 40 50 60 70 80 V 100
Tj VDS