IPD20N03L

IPU20N03L

OptiMOS Buck converter series

Product Summary
Feature
VDS 30 V
•N-Channel
RDS(on) 20 mΩ
•Logic Level
ID 30 A
•Low On-Resistance RDS(on)

•Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 P- TO252 -3-11

•Superior thermal resistance

•175°C operating temperature

•Avalanche rated

•dv/dt rated

•Ideal for fast switching buck converters

Type Package Ordering Code Marking

IPD20N03L P- TO252 -3-11 Q67042-S4050 20N03L

IPU20N03L P- TO251 -3-1 Q67042-S4106 20N03L

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current1) ID A

TC=25°C 30
30

Pulsed drain current ID puls 120

TC=25°C

Avalanche energy, single pulse EAS 15 mJ

ID=15A, V DD=25V, RGS=25Ω

Repetitive avalanche energy, limited by Tjmax 2) EAR 6

Reverse diode dv/dt dv/dt 6 kV/µs

IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage VGS ±20 V

Power dissipation Ptot 60 W

TC=25°C

Operating and storage temperature Tj , Tstg -55... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

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Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case RthJC - 1.7 2.5 K/W

Thermal resistance, junction - ambient, leaded RthJA - - 100

SMD version, device on PCB: RthJA

@ min. footprint - - 75
@ 6 cm2 cooling area 3) - - 50

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage V(BR)DSS 30 - - V

VGS=0V, I D=1mA

Gate threshold voltage, V GS = VDS VGS(th) 1.2 1.6 2

ID=25µA

Zero gate voltage drain current IDSS µA

VDS=30V, V GS=0V, T j=25°C - 0.01 1
VDS=30V, V GS=0V, T j=125°C - 10 100

Gate-source leakage current IGSS - 1 100 nA

VGS=20V, VDS=0V

Drain-source on-state resistance RDS(on) - 22.9 31 mΩ

VGS=4.5V, ID=15A

Drain-source on-state resistance RDS(on) - 15.5 20

VGS=10V, ID=15A

1Current limited by bondwire ; with an RthJC = 2.5K/W the chip is able to carry I D= 42A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.

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IPU20N03L

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max , 14 28 - S
ID=30A

Input capacitance Ciss VGS=0V, VDS =25V, - 530 700 pF

f=1MHz
Output capacitance Coss - 200 275

Reverse transfer capacitance Crss - 60 90

Gate resistance RG - 1.3 - Ω

Turn-on delay time t d(on) VDD=15V, VGS=10V, - 6.2 9.3 ns
ID=15A,
Rise time tr - 11 17
RG =12.7Ω
Turn-off delay time t d(off) - 23 34

Fall time tf - 18 27

Gate Charge Characteristics

Gate to source charge Q gs VDD=15V, ID=15A - 2.5 3.1 nC

Gate to drain charge Q gd - 6.4 9.6

Gate charge total Qg VDD=15V, ID=15A, - 8.4 11

VGS=0 to 5V

Output charge Q oss VDS=15V, ID =15A, - 8 10 nC

VGS=0V

Gate plateau voltage V(plateau) VDD=15V, ID=15A - 3.6 - V

Reverse Diode

Inverse diode continuous IS TC=25°C - - 30 A

forward current

Inv. diode direct current, pulsed ISM - - 120

Inverse diode forward voltage VSD VGS =0V, IF =30A - 1.1 1.4 V

Reverse recovery time trr VR =15V, IF =lS , - 15 18 ns

diF /dt=100A/µs
Reverse recovery charge Qrr - 2 3 nC

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IPU20N03L

1 Power dissipation 2 Drain current

Ptot = f (TC) ID = f (TC)
parameter: VGS≥ 10 V

IPD20N03L IPD20N03L
65 32
W
A
55

50
24
45
P tot

ID
40 20

35
16
30

25 12
20
8
15

10
4
5

0 0
0 20 40 60 80 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190
TC TC

3 Safe operating area 4 Max. transient thermal impedance

ID = f ( VDS ) ZthJC = f (tp)
parameter : D = 0 , T C = 25 °C parameter : D = tp/T

10 3 IPD20N03L 10 1 IPD20N03L

K/W
A
10 0
tp = 35.0µs
ZthJC

2
10
D
/I
ID

10 -1
DS
V

100 µs
=)
(on

D = 0.50
DS
R

-2
10 0.20
1 0.10
10
1 ms
0.05
0.02
10 -3
0.01
10 ms
single pulse
DC
0
10 -1 0 1 2
10 -4 -7 -6 -5 -4 -3 -2 0
10 10 10 V 10 10 10 10 10 10 10 s 10
VDS tp

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IPU20N03L

5 Typ. output characteristic 6 Typ. drain-source on resistance

ID = f (VDS); Tj=25°C RDS(on) = f (ID)
parameter: t p = 80 µs parameter: VGS

IPD20N03L IPD20N03L
75 Ptot = 60W 65
A mΩ c d e

VGS [V]
hg f 55
a 3.0
60 b 3.5 50

RDS(on)
55 e c 4.0
d 4.5
45
50
ID

e 5.0
40
45 f 6.0
d 35
40 g 7.0
h 10.0
35 30
30 25
25 f
20 g
c
20 h
15
15
b
10
10 VGS [V] =
c d e f g h
5 5 4.0 4.5 5.0 6.0 7.0 10.0
a
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 10 20 30 40 50 A 65
VDS ID

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID= f ( VGS ); VDS ≥ 2 x ID x R DS(on)max gfs = f(ID); Tj=25°C
parameter: t p = 80 µs parameter: gfs

60 30
A

S
50

45

40 20
gfs
ID

35

30 15

25

20 10

15

10 5

0 0
0 1 2 3 4 V 5.5 0 5 10 15 20 A 30
VGS ID

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9 Drain-source on-state resistance 10 Typ. gate threshold voltage

RDS(on) = f (Tj) VGS(th) = f (Tj)
parameter : ID = 15 A, V GS = 10 V parameter: VGS = VDS

IPD20N03L
50 3
mΩ
V
40
RDS(on)

V GS(th)
35 0.868mA
2
30

25 1.5
98%

20
typ 1 25µA
15

10
0.5
5

0 0
-60 -20 20 60 100 140 °C 200 -60 -20 20 60 100 °C 180
Tj Tj

11 Typ. capacitances 12 Forward character. of reverse diode

C = f (VDS) IF = f (VSD )
parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs

10 4 10 3 IPD20N03L

pF A

10 3 Ciss 10 2
IF
C

Coss

10 2 Crss 10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)

10 1 10 0
0 5 10 15 20 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3
VDS VSD

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13 Typ. avalanche energy 15 Drain-source breakdown voltage

EAS = f (Tj) V(BR)DSS = f (Tj)
par.: I D = 15 A, V DD = 25 V, RGS = 25 Ω parameter: I D=10 mA

IPD20N03L
16 36

mJ V

34

V(BR)DSS
12
E AS

33
10
32
8
31

6
30

4
29

2 28

0 27
25 45 65 85 105 125 145 °C 185 -60 -20 20 60 100 140 °C 200
Tj Tj

14 Typ. gate charge

VGS = f (Q Gate)
parameter: I D = 15 A pulsed

IPD20N03L
16

12
VGS

10
0.2 VDS max
8 0.5 V
DS max

0.8 VDS max

6

0
0 2 4 6 8 10 12 14 16 18 nC 21
Q Gate

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Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

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regarding circuits, descriptions and charts stated herein.

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For information on the types in question please contact your nearest Infineon Technologies Office.

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