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SIPMOS =Power-Transistor
Feature Product Summary
Avalanche rated
dv/dt rated
Drain
pin 2
Gate
Type Package Ordering Code pin1
SPD09P06PL P-TO252 Q67042-S4007 Source
pin 3
SPU09P06PL P-TO251-3-1 Q67042-S4020
Page 1 2001-07-02
SPD09P06PL
Final data SPU09P06PL
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 3.6 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 100
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm 2 cooling area 1) - - 50
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
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SPD09P06PL
Final data SPU09P06PL
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS 2*ID *RDS(on)max , 1.8 3.5 - S
ID =-5.4
Reverse Diode
Inverse diode continuous IS TC=25°C - - -9.7 A
forward current
Inverse diode direct current, ISM - - -38.8
pulsed
Inverse diode forward voltage VSD VGS =0V, IF =-9.7A - -1.1 -1.4 V
Reverse recovery time trr VR =-30V, IF=lS, - 52 76 ns
Reverse recovery charge Qrr diF /dt=100A/µs - 64 96 nC
Page 3 2001-07-02
SPD09P06PL
Final data SPU09P06PL
1 Power dissipation 2 Drain current
Ptot = f (TC ) ID = f (TC )
parameter: VGS 10 V
SPD09P06PL SPD09P06PL
50 -11
W A
40 -9
-8
35
Ptot
-7
ID
30
-6
25
-5
20
-4
15
-3
10
-2
5 -1
0 0
0 20 40 60 80 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190
TC TC
K/W
tp = 11.0µs
A
10 0
Z thJC
-10 1
100 µs
ID
10 -1
D
/I
DS
V
=
D = 0.50
)
on
1 ms -2
10 0.20
(
DS
R
-10 0
10 ms
0.10
0.05
DC single pulse
0.02
10 -3
0.01
-10 -1 -1 0 1 2
10 -4 -7 -6 -5 -4 -3 -2 0
-10 -10 -10 V -10 10 10 10 10 10 10 s 10
VDS tp
Page 4 2001-07-02
SPD09P06PL
Final data SPU09P06PL
5 Typ. output characteristic 6 Typ. drain-source on resistance
ID = f (VDS ); Tj=25°C RDS(on) = f (ID )
parameter: tp = 80 µs parameter: VGS
SPD09P06PL SPD09P06PL
-24 Ptot = 42W 0.8
A c d e f g h i
VGS [V]
-20 kj a -2.0
b -2.5
-18 i 0.6
RDS(on)
c -3.0
d -3.5
-16
e -4.0
0.5
ID
h
-14 f -4.5
g -5.0
-12 g h -5.5 0.4
i -6.0
-10
j -7.0
f 0.3
-8 k -8.0
-6 e 0.2
-4 j k
d
0.1 VGS [V] =
c d e f g h i j k
-2 c -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -7.0 -8.0
b
0 a 0
0 -2 -4 -6 -8 V -12 0 -2 -4 -6 -8 -10 -12 -14 -16 A -20
VDS ID
S
A
3
g fs
ID
2.5
15
10
1.5
1
5
0.5
0 0
0 1 2 3 4 5 6 V 8 0 1 2 3 4 5 6 7 8 V 10
VGS ID
Page 5 2001-07-02
SPD09P06PL
Final data SPU09P06PL
9 Drain-source on-state resistance 10 Gate threshold voltage
RDS(on) = f (Tj ) VGS(th) = f (Tj)
parameter : ID = -6.8 A, VGS = -10 V parameter: VGS = VDS , ID = -250 µA
SPD09P06PL
0.75 2.4
V
98 %
2
0.6
1.8
RDS(on)
V GS(th)
0.55
0.5 1.6 typ.
0.45 1.4
0.4
1.2
0.35 2%
98% 1
0.3
0.25 0.8
typ
0.2 0.6
0.15
0.4
0.1
0.05 0.2
0 0
-60 -20 20 60 100 140 °C 200 -60 -20 20 60 100 °C 180
Tj Tj
A
Ciss
pF
-10 1
IF
C
Coss
10 2
Crss
-10 0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 1 -10 -1
0 -5 -10 -15 -20 V -30 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3
VDS VSD
Page 6 2001-07-02
SPD09P06PL
Final data SPU09P06PL
13 Typ. avalanche energy 14 Typ. gate charge
EAS = f (Tj ) VGS = f (QGate )
par.: ID = -9.7 A , VDD = -25 V, RGS = 25 parameter: ID = -9.7 A pulsed
SPD09P06PL
80 -16
mJ V
60 -12
E AS
VGS
50 -10 0,2 VDS max
0,8 VDS max
40 -8
30 -6
20 -4
10 -2
0 0
25 45 65 85 105 125 145 °C 185 0 4 8 12 16 20 nC 28
Tj QGate
SPD09P06PL
-72
-68
V (BR)DSS
-66
-64
-62
-60
-58
-56
-54
-60 -20 20 60 100 140 °C 200
Tj
Page 7 2001-07-02
SPD09P06PL
Final data SPU09P06PL
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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Page 8 2001-07-02
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