Rev. 2.

2 BSP89

SIPMOS Ò Small-Signal-Transistor
Feature Product Summary

· N-Channel VDS 240 V

· Enhancement mode RDS(on) 6 W

· Logic Level ID 0.35 A

· dv/dt rated PG-SOT223

• Pb-free lead plating; RoHS compliant 4

• ee
4.5V rated
lead plating; RoHS compliant
x Qualified according to AEC Q101 3

• Halogen­free according to IEC61249­2­21 2
1 VPS05163

Type Package Tape and Reel Information Marking Packaging

BSP89 PG-SOT223 H6327: 1000 pcs/reel BSP89 Non dry

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit
Continuous drain current ID A
TA=25°C 0.35
TA=70°C 0.28
Pulsed drain current ID puls 1.4
TA=25°C

Reverse diode dv/dt dv/dt 6 kV/µs

IS=0.35A, V DS=192V, di/dt=200A/µs, Tjmax=150°C

Gate source voltage VGS ±20 V

ESD class (JESD22-A114-HBM) 1A (>250V, <500V)
Power dissipation Ptot 1.8 W
TA=25°C

Operating and storage temperature Tj , Tstg -55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

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 Rev. 2.2 BSP89
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 25 K/W
(Pin 4)
SMD version, device on PCB: RthJA
@ min. footprint - - 115
@ 6 cm2 cooling area 1) - - 70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(BR)DSS 240 - - V
V GS=0, ID=250µA

Gate threshold voltage, VGS = VDS VGS(th) 0.8 1.4 1.8

ID=108µA

Zero gate voltage drain current IDSS µA

V DS=240V, VGS=0, Tj=25°C - - 0.1
V DS=240V, VGS=0, Tj=150°C - - 10
Gate-source leakage current IGSS - - 10 nA
V GS=20V, VDS=0

Drain-source on-state resistance RDS(on) - 4.9 7.5 W

V GS=4.5V, ID=0.32A

Drain-source on-state resistance RDS(on) - 4.2 6

V GS=10V, ID=0.35A

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.

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 Rev. 2.2 BSP89
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g fs V DS³2*I D*RDS(on)max, 0.18 0.36 - S
ID=0.28A

Input capacitance Ciss V GS=0, VDS=25V, - 80 140 pF

Output capacitance Coss f=1MHz - 11.2 16.8
Reverse transfer capacitance Crss - 5.2 7.8
Turn-on delay time td(on) V DD=120V, V GS=10V, - 4 6 ns
Rise time tr ID=0.35A, R G=6W - 3.5 5.3
Turn-off delay time td(off) - 15.9 23.8
Fall time tf - 18.4 27.6

Gate Charge Characteristics

Gate to source charge Q gs V DD=192V, ID=0.35A - 0.2 0.3 nC
Gate to drain charge Q gd - 2 3
Gate charge total Qg V DD=192V, ID=0.35A, - 4.3 6.4
V GS=0 to 10V

Gate plateau voltage V(plateau) V DD=192V, ID = 0.35 A - 3.1 - V

Reverse Diode
Inverse diode continuous IS TA=25°C - - 0.35 A
forward current
Inv. diode direct current, pulsed ISM - - 1.4
Inverse diode forward voltage VSD V GS=0, IF = IS - 0.85 1.2 V
Reverse recovery time trr V R=120V, IF=lS, - 67 100 ns
Reverse recovery charge Qrr diF/dt=100A/µs - 123 184 nC

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 Rev. 2.2 BSP89

1 Power dissipation 2 Drain current

Ptot = f (TA) ID = f (TA)
parameter: V GS³ 10 V
BSP89 BSP89
1.9 0.38
W A

1.6 0.32

1.4 0.28
Ptot

1.2 0.24

ID
1 0.2

0.8 0.16

0.6 0.12

0.4 0.08

0.2 0.04

0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TA TA

3 Safe operating area 4 Transient thermal impedance

ID = f ( V DS ) ZthJA = f (tp)
parameter : D = 0 , TA = 25 °C parameter : D = t p/T
1 BSP89
10 10 2 BSP89

A K/W

tp = 160.0µs

10 0 /ID 10 1
S
VD
=
ZthJA

o n) 1 ms
S(
ID

RD

10 ms
10 -1 10 0
D = 0.50
0.20
0.10

single pulse 0.05

10 -2 10 -1
0.02
DC
0.01

10 -3 0 1 2 3
10 -2 -5 -4 -3 -2 -1 0 1 2 4
10 10 10 V 10 10 10 10 10 10 10 10 10 s 10
VDS tp

Page 4 2012­11-29
 Rev. 2.2 BSP89

5 Typ. output characteristic 6 Typ. drain-source on resistance

ID = f (VDS) RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS
0.6 9

W
A
7

RDS(on)
0.4 6
ID

5
0.3
4
3V 3V
3.4V 3.4V
0.2 3
3.6V 3.6V
4.2V 4.2V
4.6V 2 4.6V
0.1 5V 5V
6V 6V
1
10V 10V

0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0.1 0.2 0.3 0.4 A 0.6
VDS ID

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max g fs = f(ID)
parameter: Tj = 25 °C parameter: Tj = 25 °C
0.6 0.6

A S

0.4 0.4
g fs
ID

0.3 0.3

0.2 0.2

0.1 0.1

0 0
0 0.5 1 1.5 2 2.5 V 3.5 0 0.1 0.2 0.3 0.4 A 0.6
VGS ID

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 Rev. 2.2 BSP89

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

RDS(on) = f (Tj) VGS(th) = f (Tj)
parameter : ID = 0.35 A, VGS = 10 V parameter: V GS = VDS; ID =108µA
BSP89
30 2.2
W V

98%
1.8
24
RDS(on)

VGS(th)
22 1.6
20 typ.
1.4
18
16 1.2

14 1
12 2%
0.8
10
8 98% 0.6

6 0.4
typ
4
0.2
2
0 0
-60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 160
Tj Tj

11 Typ. capacitances 12 Forward character. of reverse diode

C = f (VDS) IF = f (VSD)
parameter: V GS=0, f=1 MHz, Tj = 25 °C parameter: Tj
3
10 10 1 BSP89

pF A

Ciss
10 2 10 0
IF
C

Coss

10 1 10 -1
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)

10 0 10 -2
0 5 10 15 20 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3
VDS VSD

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 Rev. 2.2 BSP89

13 Typ. gate charge 14 Drain-source breakdown voltage

VGS = f (QG ); parameter: VDS , V(BR)DSS = f (Tj)
ID = 0.35 A pulsed, Tj = 25 °C
BSP89 BSP89
16 291
V
V

276

V(BR)DSS
12
271
VGS

266
10
261
0.2 VDS max 256
8
0.5 VDS max 251
246
6 0.8 VDS max
241

4 236
231

2 226
221
0 216
0 1 2 3 4 5 nC 6.5 -60 -20 20 60 100 °C 180
QG Tj

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Rev. 2.2 BSP89

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