SIPMOS Power Transistor BUZ 111SL

Features Product Summary

• N channel Drain source voltage VDS 55 V

• Enhancement mode Drain-Source on-state resistance RDS(on) 0.007 Ω

• Avalanche rated Continuous drain current ID 80 A

• Logic Level
• dv/dt rated
• 175˚C operating temperature

Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3

BUZ111SL P-TO220-3-1 Q67040-S4002-A2 Tube G D S
BUZ111SL E3045A P-TO263-3-2 Q67040-S4002-A6 Tape and Reel
BUZ111SL E3045 P-TO263-3-2 Q67040-S4002-A5 Tube

Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified

Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 ˚C, 1) 80
TC = 100 ˚C 80
Pulsed drain current IDpulse 320
TC = 25 ˚C
Avalanche energy, single pulse EAS 700 mJ
ID = 80 A, VDD = 25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax EAR 30
Reverse diode dv/dt dv/dt 6 kV/µs
IS = 80 A, VDS = 40 V, di/dt = 200 A/µs,
Tjmax = 175 ˚C
Gate source voltage VGS ±20 V
Power dissipation Ptot 300 W
TC = 25 ˚C
Operating and storage temperature T j , Tstg -55... +175 ˚C
IEC climatic category; DIN IEC 68-1 55/175/56

Data Sheet 1 05.99

 BUZ 111SL

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 0.5 K/W
Thermal resistance, junction - ambient, leded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm 2 cooling area2) - - 40

Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage V(BR)DSS 55 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS VGS(th) 1.2 1.6 2
ID = 240 µA
Zero gate voltage drain current I DSS µA
VDS = 50 V, VGS = 0 V, T j = 25 ˚C - 0.1 1
VDS = 50 V, VGS = 0 V, T j = 150 ˚C - - 100
Gate-source leakage current I GSS - 10 100 nA
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance RDS(on) Ω
VGS = 4.5 V, ID = 80 A - 0.0085 0.01
VGS = 10 V, ID = 80 A - 0.0055 0.007

1current limited by bond wire

2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.

Data Sheet 2 05.99

 BUZ 111SL

Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g fs 30 95 - S
VDS≥2*ID*RDS(on)max , ID = 80 A
Input capacitance Ciss - 3850 4800 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance Coss - 1090 1357
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance Crss - 570 715
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time td(on) - 30 45 ns
VDD = 30 V, VGS = 4.5 V, ID = 80 A,
RG = 1.3 Ω
Rise time tr - 37 56
VDD = 30 V, VGS = 4.5 V, ID = 80 A,
RG = 1.3 Ω
Turn-off delay time td(off) - 70 105
VDD = 30 V, VGS = 4.5 V, ID = 80 A,
RG = 1.3 Ω
Fall time tf - 36 55
VDD = 30 V, VGS = 4.5 V, ID = 80 A,
RG = 1.3 Ω

Data Sheet 3 05.99

 BUZ 111SL

Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge Qgs - 12 18 nC
VDD = 40 V, ID = 80 A
Gate to drain charge Qgd - 61 91.5
VDD = 40 V, ID = 80 A
Gate charge total Qg - 155 232
VDD = 40 V, ID = 80 A, V GS = 0 to 10 V
Gate plateau voltage V(plateau) - 3.4 - V
VDD = 40 V, ID = 80 A

Reverse Diode
Inverse diode continuous forward current IS - - 80 A
TC = 25 ˚C
Inverse diode direct current,pulsed I SM - - 320
TC = 25 ˚C
Inverse diode forward voltage VSD - 1.25 1.8 V
VGS = 0 V, I F = 160 A
Reverse recovery time t rr - 105 157 ns
VR = 30 V, IF=IS , diF/dt = 100 A/µs
Reverse recovery charge Q rr - 0.31 0.47 µC
VR = 30 V, IF=l S , diF/dt = 100 A/µs

Data Sheet 4 05.99

 BUZ 111SL

Power Dissipation Drain current

Ptot = f (TC) ID = f (TC )
parameter: VGS ≥ 10 V
BUZ111SL BUZ111SL
320 90

W A

70
240

60
Ptot

200

ID
50
160
40

120
30

80
20

40 10

0 0
0 20 40 60 80 100 120 140 160 ˚C 190 0 20 40 60 80 100 120 140 160 ˚C 190

TC TC

Safe operating area Transient thermal impedance

I D = f (V DS) ZthJC = f (tp )
parameter : D = 0 , T C = 25 ˚C parameter : D = tp /T
BUZ111SL BUZ111SL
3
10 10 1
K/W
tp = 29.0µs
A
10 0
D
/I

10 2 100 µs 10 -1
Z thJC
DS
V
=
ID

n)
(o
DS
R

10 -2
D = 0.50
1 ms 0.20
1 -3 0.10
10 10
10 ms 0.05
DC 0.02
10 -4 single pulse 0.01

10 0 -1 0 1 2
10 -5 -7 -6 -5 -4 -3 -2 0
10 10 10 V 10 10 10 10 10 10 10 s 10

VDS tp

Data Sheet 5 05.99

 BUZ 111SL

Typ. output characteristics

Typ. drain-source-on-resistance
I D = f (VDS)
RDS(on) = f (ID)
parameter: tp = 80 µs
BUZ111SL
parameter: V GS
190 Ptot = 300W BUZ111SL
0.032
A
k b c d
l j i hg f
160
e
VGS [V]
Ω
a 2.5

140 b 3.0
c 3.5
0.024

RDS(on)
d d 4.0
120
ID

e 4.5
0.020
f 5.0
100
g 5.5
h 6.0 0.016
80 c i 6.5
j 7.0
0.012
60 k 8.0
e
l 10.0
f
40 b 0.008 g
i jh
k l
20 0.004 VGS [V] =
b c d e f g h i j k l
a
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.000
0 20 40 60 80 100 A 140
VDS
ID
Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance
parameter: tp = 80 µs gfs = f(ID); Tj = 25˚C
VDS ≥ 2 x I D x RDS(on)max Parameter: gfs
80 100

S
A

80
60
70

50
gfs
ID

60

40 50

40
30

30
20
20

10
10

0 0
1.0 1.5 2.0 2.5 3.0 V 4.0 0 10 20 30 40 50 A 70

VGS ID

Data Sheet 6 05.99

 BUZ 111SL

Gate threshold voltage

Drain-source on-resistance
VGS(th) = f (Tj)
RDS(on) = f (Tj)
parameter : VGS = V DS, ID = 240 µA
parameter : ID = 80 A, VGS = 4.5 V
BUZ111SL
3.0
0.034
V
Ω

0.028 2.4
2.2

VGS(th)
RDS(on)

0.024 2.0
1.8
0.020
1.6
1.4
0.016
98% 1.2
typ 1.0
0.012
max
0.8
0.008 0.6
typ
0.4
0.004 0.2
min
0.0
0.000 -60 -20 20 60 100 140 ˚C 200
-60 -20 20 60 100 140 ˚C 200
Tj
Tj
Typ. capacitances Forward characteristics of reverse diode
C = f (VDS) IF = f (VSD )
parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs
BUZ111SL
10 5 10 3

pF A

10 4 10 2
IF
C

Ciss

Coss
10 3 10 1
Crss Tj = 25 ˚C typ
Tj = 175 ˚C typ
Tj = 25 ˚C (98%)
Tj = 175 ˚C (98%)

10 2 10 0
0 10 20 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VDS VSD

Data Sheet 7 05.99

 BUZ 111SL

Avalanche Energy EAS = f (Tj) Typ. gate charge

parameter: ID = 80 A, V DD = 25 V VGS = f (QGate )
RGS = 25 Ω parameter: ID puls = 80 A
BUZ111SL
750 16

V
mJ

12

VGS
EAS

10
450

0,2 VDS max 0,8 VDS max

300
6

4
150

0 0
20 40 60 80 100 120 140 ˚C 180 0 40 80 120 160 nC 240

Tj Q Gate

Drain-source breakdown voltage

V(BR)DSS = f (Tj)

BUZ111SL
66
V

64
V(BR)DSS

62

60

58

56

54

52

50
-60 -20 20 60 100 140 ˚C 200

Tj

Data Sheet 8 05.99

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