TEMPFET BTS 113A

Features
● N channel
● Logic level
● Enhancement mode
● Temperature sensor with thyristor characteristic
3
● The drain pin is electrically shorted to the tab 2
1

Pin 1 2 3
G D S

Type VDS ID RDS(on) Package Ordering Code

BTS 113A 60 V 11.5 A 0.17 Ω TO-220AB C67078-S5015-A2

Maximum Ratings

Parameter Symbol Values Unit

Drain-source voltage VDS 60 V
Drain-gate voltage, RGS = 20 kΩ VDGR 60
Gate-source voltage VGS ± 10
Continuous drain current, TC = 25 °C ID 11.5 A
ISO drain current ID-ISO 2.2
TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V
Pulsed drain current, TC = 25 °C ID puls 46
Short circuit current, Tj = – 55 ... + 150 °C ISC 27
Short circuit dissipation, Tj = – 55 ... + 150 °C PSCmax 400 W
Power dissipation Ptot 40
Operating and storage temperature range Tj, Tstg – 55 ... + 150 °C
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
Thermal resistance K/W
Chip-case Rth JC ≤ 3.1
Chip-ambient Rth JA ≤ 75

Semiconductor Group 1 04.97

 BTS 113A

Electrical Characteristics
at Tj = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Drain-source breakdown voltage V(BR)DSS V
VGS = 0, ID = 0.25 mA 60 – –
Gate threshold voltage VGS(th)
VGS = VDS, ID = 1 mA 1.6 2.0 2.5
Zero gate voltage drain current IDSS µA
VGS = 0 V, VDS = 60 V
Tj = 25 °C – 0.1 1.0
Tj = 125 °C – 10 100
Gate-source leakage current IGSS
VGS = ± 20 V, VDS = 0
Tj = 25 °C – 10 100 nA
Tj = 150 °C – 2 4 µA
Drain-source on-state resistance RDS(on) Ω
VGS = 4.5 V, ID = 5.8 A – 0.14 0.17

Dynamic Characteristics
Forward transconductance gfs S
VDS ≥ 2 × ID × RDS(on)max, ID = 5.8 A 4.5 7.5 –
Input capacitance Ciss pF
VGS = 0, VDS = 25 V, f = 1 MHz – 420 560
Output capacitance Coss
VGS = 0, VDS = 25 V, f = 1 MHz – 160 250
Reverse transfer capacitance Crss
VGS = 0, VDS = 25 V, f = 1 MHz – 60 110
Turn-on time ton, (ton = td(on) + tr) td(on) – 15 25 ns
VCC = 30 V, VGS = 5.0 V, ID = 3.0 A, tr – 55 80
RGS = 50 Ω
Turn-off time toff, (toff = td(off) + tf) td(off) – 45 60
VCC = 30 V, VGS = 5.0 V, ID = 3.0 A, tf – 40 55
RGS = 50 Ω

Semiconductor Group 2
 BTS 113A

Electrical Characteristics (cont’d)

at Tj = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

Reverse Diode
Continuous source current IS – – 11.5 A
Pulsed source current I SM – – 46
Diode forward on-voltage VSD V
I F = 28 A, VGS = 0 – 1.5 1.8
Reverse recovery time t rr ns
I F = I S, diF/dt = 100 A/µs, VR = 30 V – 60 –
Reverse recovery charge Q rr µC
I F = I S, diF/dt = 100 A/µs, VR = 30 V – 0.10 –

Temperature Sensor
Forward voltage VTS(on) V
I TS(on) = 5 mA, Tj = – 55 ... + 150 °C – 1.4 1.5
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C – – 10
Forward current ITS(on) mA
Tj = – 55 ... + 150 °C – – 5
Sensor override, tp ≤ 100 µs
Tj = – 55 ... + 160 °C – – 600
Holding current, VTS(off) = 5.0 V, Tj = 25 °C IH 0.05 0.3 0.5
Tj = 150 °C 0.05 0.2 0.3
Switching temperature TTS(on) °C
VTS = 5.0 V 150 – –
Turn-off time toff µs
VTS = 5.0 V, ITS(on) = 2 mA 0.5 – 2.5

Semiconductor Group 3
 BTS 113A

Examples for short-circuit protection

at Tj = – 55 ... + 150 °C, unless otherwise specified.
Parameter Symbol Examples Unit
1 2 –

Drain-source voltage VDS 15 30 – V

Gate-source voltage VGS 5.0 3.5 –
Short-circuit current ISC 27 12.6 – A
Short-circuit dissipation PSC 400 380 – W
Response time tSC(off) ms
Tj = 25 °C, before short circuit 20 20 –

Short-circuit protection ISC = f (VDS) Max. gate voltage VGS(SC) = f (VDS)

Parameter: VGS Parameter: Tj = – 55 ... + 150 °C
Diagram to determine ISC for Tj = – 55 ... + 150 ˚C

Semiconductor Group 4
 BTS 113A

Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance

RDS(on) = f (ID)
Parameter: VGS

Typical output characteristics ID = f (VDS) Safe operating area ID = f (VDS)

Parameter: tp 80 = µs Parameter: D = 0.01, TC = 25 °C

Semiconductor Group 5
 BTS 113A

Drain-source on-state resistance Gate threshold voltage VGS(th) = f (Tj)

RDS(on) = f (Tj) Parameter: VDS = VGS, ID = – 1 mA
Parameter: ID = – 5 A, VGS = 4.5 V

Typ. transfer characteristic Typ. transconductance gfs = f (ID)

ID = f (VGS) Parameter: tp = 80 µs, VDS = – 25 V
Parameter: tp = 80 µs, VDS = – 25 V

Semiconductor Group 6
 BTS 113A

Continuous drain current ID = f (TC) Forward characteristics of reverse diode

Parameter: VGS ≥ 4.5 V IF = f (VSD)
Parameter: Tj, tp = 80 µs

Typ. gate-source leakage current Typ. capacitances C = f (VDS)

IGSS = f (TC) Parameter: VGS = 0, f = 1 MHz
Parameter: VGS = 10 V, VDS = 0

Semiconductor Group 7
 BTS 113A

Transient thermal impedance ZthJC = f (tp)

Parameter: D = tp/T

Semiconductor Group 8
 BTS 113A
Package Outlines

TO 220 AB Ordering Code TO 220 AB Ordering Code

Standard C67078-S5015-A3 SMD Version E 3045 A C67078-S5015-A4
(Tape & reel)

9.9
9.5 4.4
3.7 1.3
2.8

15.6
17.5
12.8

1)
9.2
1

4.6

3)
13.5
2)

0.75 0.5
1.05 2.4
2.54 2.54 GPT05155

1) punch direction, burr max. 0.04

2) dip tinning
3) max. 14.5 by dip tinning press burr max. 0.05

Semiconductor Group 9