BUZ 173

SIPMOS Power Transistor

P channel
Enhancement mode
Avalanche rated

Pin 1 Pin 2 Pin 3

G D S

Type VDS ID RDS(on) Package Ordering Code

BUZ 173 -200 V -3.6 A 1.5 TO-220 AB C67078-S1452-A2

Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current ID A
TC = 30 C -3.6
Pulsed drain current IDpuls
TC = 25 C -14
Avalanche energy, single pulse EAS mJ
ID = -3.6 A, VDD = -25 V, RGS = 25
L = 23 mH, Tj = 25 C 200
Gate source voltage VGS 20 V
Power dissipation Ptot W
TC = 25 C 40
Operating temperature Tj -55 ... + 150 C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip case RthJC 3.1 K/W
Thermal resistance, chip to ambient RthJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Data Sheet 1 05.99

 BUZ 173

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics
Drain- source breakdown voltage V(BR)DSS V
VGS = 0 V, ID = -0.25 mA, Tj = 25 C -200 - -
Gate threshold voltage VGS(th)
VGS=VDS, ID = 1 mA -2.1 -3 -4
Zero gate voltage drain current IDSS A
VDS = -200 V, VGS = 0 V, Tj = 25 C - -0.1 -1
VDS = -200 V, VGS = 0 V, Tj = 125 C - -10 -100
Gate-source leakage current IGSS nA
VGS = -20 V, VDS = 0 V - -10 -100
Drain-Source on-resistance RDS(on)
VGS = -10 V, ID = -2.3 A - 1.2 1.5

Data Sheet 2 05.99

 BUZ 173

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics
Transconductance gfs S
VDS 2 * ID * RDS(on)max, ID = -2.3 A 1.1 2.2 -
Input capacitance Ciss pF
VGS = 0 V, VDS = -25 V, f = 1 MHz - 750 1150
Output capacitance Coss
VGS = 0 V, VDS = -25 V, f = 1 MHz - 125 190
Reverse transfer capacitance Crss
VGS = 0 V, VDS = -25 V, f = 1 MHz - 40 60
Turn-on delay time td(on) ns
VDD = -30 V, VGS = -10 V, ID = -2.6 A
RGS = 50 - 20 30
Rise time tr
VDD = -30 V, VGS = -10 V, ID = -2.6 A
RGS = 50 - 60 95
Turn-off delay time td(off)
VDD = -30 V, VGS = -10 V, ID = -2.6 A
RGS = 50 - 70 90
Fall time tf
VDD = -30 V, VGS = -10 V, ID = -2.6 A
RGS = 50 - 55 75

Data Sheet 3 05.99

 BUZ 173

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode
Inverse diode continuous forward current IS A
TC = 25 C - - -3.6
Inverse diode direct current,pulsed ISM
TC = 25 C - - -14
Inverse diode forward voltage VSD V
VGS = 0 V, IF = -7.2 A - -1 -1.3
Reverse recovery time trr ns
VR = -30 V, IF=lS, diF/dt = 100 A/s - 200 -
Reverse recovery charge Qrr C
VR = -30 V, IF=lS, diF/dt = 100 A/s - 0.75 -

Data Sheet 4 05.99

 BUZ 173

Power dissipation Drain current

Ptot = (TC) ID = (TC)
parameter: VGS -10 V

45 -3.8

A
W
-3.2
Ptot 35 ID
-2.8

30
-2.4

25
-2.0

20
-1.6

15
-1.2

10 -0.8

5 -0.4

0 0.0
0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160
TC TC

Safe operating area Transient thermal impedance

ID = (VDS) Zth JC = (tp)
parameter: D = 0.01, TC = 25C parameter: D = tp / T

-10 2 10 1

K/W
A
ID ZthJC
tp = 5.6s 10 0
10 s
-10 1
100 s

10 -1
D
/I

1 ms D = 0.50
DS
V

0.20
=
n)

-10 0
(o

0.10
DS
R

10 ms 0.05
10 -2
0.02
0.01
single pulse
DC

-10 -1 10 -3
0 1 2 -7 -6 -5 -4 -3 -2 -1 0
-10 -10 -10 V 10 10 10 10 10 10 10 s 10
VDS tp

Data Sheet 5 05.99

 BUZ 173

Typ. output characteristics Typ. drain-source on-resistance

ID = (VDS) RDS (on) = (ID)
parameter: tp = 80 s parameter: VGS

-8.0 l 5.0
Ptot = 40W
kj i h g
a b c d e f
A f
VGS [V]

ID a -4.0 RDS (on) 4.0

-6.0 b -4.5
c -5.0 3.5
e
d -5.5
-5.0
e -6.0 3.0
f -6.5

-4.0 g -7.0 2.5

d h -7.5
i -8.0 2.0
-3.0 g
j -9.0
c h
k -10.0 1.5 i
k j
-2.0 l -20.0
l
b 1.0

-1.0 VGS [V] =

a 0.5 a b c d e f g h i j k l
-4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0-20.0
0.0 0.0
0 -4 -8 -12 -16 V -24 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 A -8.0
VDS ID

Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 s parameter: tp = 80 s,
VDS2 x ID x RDS(on)max VDS2 x ID x RDS(on)max

-8.0 4.0

S
A

ID gfs 3.2
-6.0
2.8

-5.0
2.4

-4.0 2.0

1.6
-3.0

1.2
-2.0
0.8

-1.0
0.4

0.0 0.0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 A -8.0
VGS ID

Data Sheet 6 05.99

 BUZ 173

Drain-source on-resistance Gate threshold voltage

RDS (on) = (Tj) VGS (th) = (Tj)
parameter: ID = -2.3 A, VGS = -10 V parameter: VGS = VDS, ID = 1 mA

5.5 -4.6

V 98%
-4.0
4.5
RDS (on) VGS(th)
-3.6
4.0
-3.2 typ
3.5
-2.8
3.0
-2.4 2%
2.5
-2.0
98%
2.0
-1.6
typ
1.5 -1.2

1.0 -0.8

0.5 -0.4
0.0 0.0
-60 -20 20 60 100 C 160 -60 -20 20 60 100 C 160
Tj Tj

Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = (VSD)
parameter:VGS = 0V, f = 1MHz parameter: Tj, tp = 80 s

10 1 -10 2

nF A
C IF

10 0 -10 1
Ciss

10 -1 Coss -10 0
Tj = 25 C typ
Tj = 150 C typ
Crss
Tj = 25 C (98%)
Tj = 150 C (98%)

10 -2 -10 -1
0 -5 -10 -15 -20 -25 -30 V -40 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
VDS VSD

Data Sheet 7 05.99

 BUZ 173

Avalanche energy EAS = (Tj) Drain-source breakdown voltage

parameter: ID = -3.6 A, VDD = -25 V V(BR)DSS = (Tj)
RGS = 25 , L = 23 mH

220 -240

mJ V

180 -230
EAS V(BR)DSS
-225
160
-220
140
-215
120
-210
100
-205
80
-200
60
-195

40 -190

20 -185
0 -180
20 40 60 80 100 120 C 160 -60 -20 20 60 100 C 160
Tj Tj

Data Sheet 8 05.99