Transistor

2SD592, 2SD592A
Silicon NPN epitaxial planer type

For low-frequency output amplification

Unit: mm
Complementary to 2SB621 and 2SB621A
5.0±0.2 4.0±0.2

■ Features

5.1±0.2
● Large collector power dissipation PC.
● Low collector to emitter saturation voltage VCE(sat).

13.5±0.5
■ Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to 2SD592 30
VCBO V +0.2 +0.2
base voltage 2SD592A 60 0.45 –0.1 0.45 –0.1

Collector to 2SD592 25 1.27 1.27

VCEO V
emitter voltage 2SD592A 50

2.3±0.2
Emitter to base voltage VEBO 5 V 1 2 3 1:Emitter
Peak collector current ICP 1.5 A 2:Collector
3:Base
Collector current IC 1 A 2.54±0.15
JEDEC:TO–92
Collector power dissipation PC 750 mW EIAJ:SC–43A

Junction temperature Tj 150 ˚C

Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = 20V, IE = 0 0.1 µA
Collector to base 2SD592 30
VCBO IC = 10µA, IE = 0 V
voltage 2SD592A 60
Collector to emitter 2SD592 25
VCEO IC = 2mA, IB = 0 V
voltage 2SD592A 50
Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V
hFE1 *1 VCE = 10V, IC = 500mA*2 85 160 340
Forward current transfer ratio
hFE2 VCE = 5V, IC = 1A*2 50
Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA*2 0.2 0.4 V
Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA*2 0.85 1.2 V
Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 20 pF
*2 Pulse measurement
*1h Rank classification
FE1

Rank Q R S
hFE1 85 ~ 170 120 ~ 240 170 ~ 340

1
Transistor 2SD592, 2SD592A

PC — Ta IC — VCE IC — I B
1.0 1.50 1.2
Ta=25˚C VCE=10V
Collector power dissipation PC (W)

Ta=25˚C
1.25 1.0
0.8 IB=10mA

Collector current IC (A)

Collector current IC (A)

9mA
8mA
1.00 0.8
7mA
0.6
6mA
0.75 5mA 0.6

0.4 4mA

0.50 3mA 0.4

2mA
0.2
0.25 0.2
1mA

0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0 2 4 6 8 10 12
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA)

VCE(sat) — IC VBE(sat) — IC hFE — IC

10 100 600
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 IC/IB=10
Base to emitter saturation voltage VBE(sat) (V)

VCE=10

Forward current transfer ratio hFE

3 30
500

1 10

400
Ta=75˚C
0.3 3
25˚C 25˚C
0.1 –25˚C 1 Ta=–25˚C 300
75˚C Ta=75˚C
0.03 0.3
200
25˚C
0.01 0.1
–25˚C
100
0.003 0.03

0.001 0.01 0
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 30 100
Collector current IC (A) Collector current IC (A) Collector current IC (A)

fT — IE Cob — VCB VCER — RBE

200 50 120
VCB=10V
IE=0 IC=10mA
Collector output capacitance Cob (pF)

Ta=25˚C
Collector to emitter voltage VCER (V)

f=1MHz Ta=25˚C
Ta=25˚C
Transition frequency fT (MHz)

100
160 40

80
120 30

60
2SD592A
80 20
40

2SD592
40 10
20

0 0 0
–1 –3 –10 –30 –100 1 3 10 30 100 0.1 0.3 1 3 10 30 100
Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ)

2
Transistor 2SD592, 2SD592A

ICEO — Ta
104
VCE=10V

103
ICEO (Ta=25˚C)
ICEO (Ta)

102

10

1
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)