DATA SHEET MMBT2222A

GENERAL PURPOSE TRANSISTORS NPN Silicon

FEATURES
 High DC Current Gain
 Low Collector-Emitter Saturation Voltage

MECHANICAL DATA
 Available in SOT-23 Package
 Solderability：MIL-STD-202, Method 208
 Full RoHS Compliance

ORDERING INFORMATION

Part Number Package Shipping Marking Code

MMBT2222A□-T3R SOT-23 Tape Reel 1P

Note:
G : Halogen Free

THERMAL DATA

PARAMETER SYMBOL VALUES UNIT

Thermal Resistance, Junction-to-Ambient RθJA 357 °C/W
Note:
2
1. RθJA is measured with device mounted on 1 in FR-4 board with 2 oz copper.

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 DATA SHEET MMBT2222A

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise specified. (Note 1)

PARAMETER SYMBOL RATING UNIT
Collector-Emitter Voltage VCEO 40 V
Collector-Base Voltage VCBO 75 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current (Continuous) IC 600 mA
Total Device Dissipation PD 350 mW
Junction Temperature TJ 150 °C
Storage Temperature Range Tstg - 55 ~ +150 °C
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted.

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 40 V
Collector-Base Breakdown Voltage V(BR)CBO IC = 10μA, IE = 0 75 V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10μA, IC = 0 6.0 V
Emitter Cut-off Current IEBO VEB = 3V, IC = 0 0.1 μA
Collector Cut-off Current ICEX VCE = 60V, VEB(OFF) = 3V 10 nA
Collector Cut-off Current ICBO VCB = 60V, IE = 0 10 nA
ON CHARACTERISTICS
VCE = 10V, IC = 0.1mA 40
Dc Current Gain hFE VCE = 10V, IC = 150mA 100 300 -
VCE = 10V, IC = 500mA 42
IC = 150mA, IB = 15mA 0.3
Collector-Emitter Saturation Voltage VCE(sat) V
IC = 500mA, IB = 50mA 1.0
IC = 150mA, IB = 15mA 0.6 1.2
Base-Emitter Saturation Voltage VBE(sat) V
IC = 500mA, IB = 50mA 2.0
SMALL−SIGNAL CHARACTERISTICS
Transition Frequency fT VCE = 20V, IC = 20mA, f = 100MHz 300 MHz
Delay Time td VCC = 30v, IC = 150mA, 10
nS
Rise Time tr IB1 = 15Ma, VBE(OFF) = 0.5V 25
Fall Time tf VCC = 30v, IC = 150mA, 225
nS
Storage Time ts IB1 = IB2 = 15mA 60

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 DATA SHEET MMBT2222A

ELECTRICAL CHARACTERISTICS CURVE

COLLECTOR-EMITTER VOLTAGE, VCE (V)

1000 1
DC CURRENT GAINH, hFE

0.8

0.6
100
0.4

0.2

10 0
0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100

COLLECTOR CURRENT, IC (mA) BASE CURRENT, IB (mA)

FIG.1 - DC CURRENT GAIN FIG.2 - COLLECTOR SATURATION REGION

1000 1000
IC/IB=10
TJ=25℃
t's=ts-1/8tf
100 100
TIME, tr (ns)

TIME, tr (ns)

tf

10 10 VCC=30V
tr@VCC=30V IC/IB=10
td@VEB(off)=2.0V IB1=IB2
td@VEB(off)=0 T =25℃
1 1
1 10 100 1000 1 10 100 1000

COLLECTOR CURRENT, IC (mA) COLLECTOR CURRENT, IC (mA)

FIG.3 - TURN-ON TIME FIG.4 - TURN-OFF TIME

10 10
RS=OPTIMUM SOURCE f=1.0kHz
NOISE FIGURE, NF (dB)

NOISE FIGURE, NF (dB)

RESISTANCE
8 8 Ic=50μA
100μA
500μA
6 IC=1.0mA, RS=150Ω 6 1.0mA
Ic=500μA, Rs=200Ω
4 Ic=100μA, Rs=2.0KΩ 4
Ic=50μA, Rs=4.0KΩ

2 2

0 0
0.01 0.1 1 10 100 10 100 1000 10000 100000

FREQUENCY, f (kHz) SOURCE RESISTANCE, Rs (OHMS)

FIG.5 - FREQUENCY EFFECTS FIG.6 - SOURCE RESISTANCE EFFECTS

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 DATA SHEET MMBT2222A

CURRENT-GAIN BANDWIDTH PRODUCT,

100 1000
VCE=20V
Tj=25℃
CAPACITANCE (pF)

fT (MHz)
10 Ceb 100

Ccb

1 10
0.1 1 10 100 1 10 100

REVERSE VOLTAGE (V) COLLECTOR CURRENT, IC (mA)

FIG.8 - CURRENT-GAIN BANDWIDTH

FIG.7 - CAPACITANCES
PRODUCT

1 0.5

0.8
COEFFICIENT (mV/℃) 0
VBE(sat)@IC/IB=10 RθVC for VCE(sat)
-0.5
VOLTAGE (V)

1.0v
0.6
VBE(ON)@VCE=10V
-1
0.4
-1.5
0.2 -2
VCE(sat)@IC/IB=10 RθVB for VBE
0 -2.5
0.1 1 10 100 1000 0.1 1 10 100 1000

COLLECTOR CURRENT, IC (mA) COLLECTOR CURRENT, IC (mA)

FIG.9 - "ON" VOLTAGE FIG.10 - TEMPERATURE COEFFICIENTS

PHYSICAL DIMENSION

Unit：Inch (Millimeter)
SOT-23

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