Transistor

2SA719, 2SA720
Silicon PNP epitaxial planer type

For low-frequency power amplification and driver amplification

Unit: mm
Complementary to 2SC1317 and 2SC1318
5.0±0.2 4.0±0.2

■ Features

5.1±0.2
● Complementary pair with 2SC1317 and 2SC1318.

13.5±0.5
■ Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to 2SA719 –30
VCBO V +0.2 +0.2
base voltage 2SA720 –60 0.45 –0.1 0.45 –0.1

Collector to 2SA719 –25 1.27 1.27

VCEO V
emitter voltage 2SA720 –50

2.3±0.2
Emitter to base voltage VEBO –5 V 1 2 3
1:Emitter
Peak collector current ICP –1 A 2:Collector
3:Base
Collector current IC –500 mA 2.54±0.15
JEDEC:TO–92
Collector power dissipation PC 625 mW EIAJ:SC–43A

Junction temperature Tj 150 ˚C

Storage temperature Tstg –55 ~ +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = –20V, IE = 0 – 0.1 µA
Collector to base 2SA719 –30
VCBO IC = –10µA, IE = 0 V
voltage 2SA720 –60
Collector to emitter 2SA719 –25
VCEO IC = –10mA, IB = 0 V
voltage 2SA720 –50
Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V
hFE1 * VCE = –10V, IC = –150mA 85 340
Forward current transfer ratio
hFE2 VCE = –10V, IC = –500mA 40
Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA – 0.35 – 0.6 V
Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA –1.1 –1.5 V
Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 200 MHz
Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 6 15 pF

*h Rank classification
FE1

Rank Q R S
hFE1 85 ~ 170 120 ~ 240 170 ~ 340

1
Transistor 2SA719, 2SA720

PC — Ta IC — VCE IC — IB
800 12 –800
Ta=25˚C VCE=–10V
Collector power dissipation PC (mW)

Ta=25˚C
700 –700
10

Collector current IC (mA)

Collector current IC (mA)

600 –600

8
500 IB=–1.0mA –500
– 0.9mA
– 0.8mA
400 6 – 0.7mA –400
– 0.6mA
– 0.5mA
300 – 0.4mA –300
4
– 0.3mA
200 –200
– 0.2mA
2
100 – 0.1mA –100

0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0 –2 –4 –6 –8 –10
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (mA)

VCE(sat) — IC VBE(sat) — IC hFE — IC

–10 –100 600
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=10 IC/IB=10
Base to emitter saturation voltage VBE(sat) (V)

VCE=–10V

Forward current transfer ratio hFE

–3 –30
500

–1 –10

400
– 0.3 Ta=75˚C –3
25˚C
25˚C
– 0.1 –1 Ta=–25˚C 300
75˚C
–25˚C Ta=75˚C
– 0.03 – 0.3
200 25˚C
–25˚C
– 0.01 – 0.1

100
– 0.003 – 0.03

– 0.001 – 0.01 0
–1 –3 –10 –30 –100 –300 –1000 –1 –3 –10 –30 –100 –300 –1000 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (mA) Collector current IC (mA) Collector current IC (A)

fT — IE Cob — VCB VCER — RBE

240 50 –120
VCB=–10V IE=0 IC=–2mA
Collector output capacitance Cob (pF)

Collector to emitter voltage VCER (V)

Ta=25˚C 45 f=1MHz Ta=25˚C

Ta=25˚C
Transition frequency fT (MHz)

200 –100
40

35
160 –80
30

120 25 –60
2SA720
20
80 –40
15
2SA719
10
40 –20
5

0 0 0
1 3 10 30 100 –1 –3 –10 –30 –100 1 3 10 30 100 300 1000
Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (kΩ)

2
Transistor 2SA719, 2SA720

ICEO — Ta Area of safe operation (ASO)

104 –10
VCE=–10V Single pulse
Ta=25˚C
–3

Collector current IC (mA)

ICP
103 –1 t=10ms
IC
ICEO (Ta=25˚C)

t=1s
– 0.3
ICEO (Ta)

102 – 0.1

– 0.03

10 – 0.01

– 0.003

1 – 0.001
0 40 80 120 160 200 – 0.1 – 0.3 –1 –3 –10 –30 –100
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V)