SPP07N65C3, SPI07N65C3

SPA07N65C3

CoolMOS™ Power Transistor V DS 650 V

Feature RDS(on) 0.6 Ω
• New revolutionary high voltage technology
ID 7.3 A
• Ultra low gate charge
• Periodic avalanche rated PG-TO220-3 PG-TO262-3-1 PG-TO220

• Extreme dv/dt rated 2

• High peak current capability 1

2
3
23
1
• Improved transconductance P-TO220-3-31
P-TO220-3-1

• PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute)

Type Package Marking

SPP07N65C3 PG-TO220 07N65C3
SPI07N65C3 PG-TO262-3 07N65C3
SPA07N65C3 PG-TO220-3 07N65C3

Maximum Ratings
Parameter Symbol Value Unit
SPP_I SPA
Continuous drain current ID A
TC = 25 °C 7.3 7.31)
TC = 100 °C 4.6 4.61)
Pulsed drain current, tp limited by Tjmax ID puls 21.9 21.9 A
Avalanche energy, single pulse EAS 230 230 mJ
ID=1.5A, VDD =50V

Avalanche energy, repetitive tAR limited by Tjmax2) EAR 0.5 0.5

ID=2.5A, VDD =50V

Avalanche current, repetitive tAR limited by Tjmax IAR 2.5 2.5 A

Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, TC = 25°C Ptot 83 32 W
Operating and storage temperature T j , Tstg -55...+150 °C

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Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
V DS = 480 V, ID = 7.3 A, Tj = 125 °C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1.5 K/W
Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.9
Thermal resistance, junction - ambient, leaded RthJA - - 62
Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling area 3) - 35 -
Soldering temperature, wavesoldering Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at T j=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 650 - - V
Drain-Source avalanche V(BR)DS VGS=0V, ID=2.5A - 730 -
breakdown voltage
Gate threshold voltage VGS(th) ID=350μA, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current I DSS VDS=600V, VGS=0V, μA
Tj=25°C - 0.5 1
Tj=150°C - - 100
Gate-source leakage current I GSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A Ω
Tj=25°C - 0.54 0.6
Tj=150°C - 1.46 -
Gate input resistance RG f=1MHz, open drain - 0.8 -

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Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g fs V DS≥2*I D*RDS(on)max, - 6 - S
ID=4.6A

Input capacitance Ciss V GS=0V, V DS=25V, - 790 - pF

Output capacitance Coss f=1MHz - 260 -
Reverse transfer capacitance Crss - 16 -
Effective output capacitance,4) Co(er) V GS=0V, - 30 -
energy related V DS=0V to 480V

Effective output capacitance,5) Co(tr) - 55 -

time related
Turn-on delay time td(on) V DD=380V, V GS=0/13V, - 6 - ns
Rise time tr ID=7.3A, RG=12Ω, - 3.5 -
Turn-off delay time td(off) Tj=125°C - 60 100
Fall time tf - 7 15

Gate Charge Characteristics

Gate to source charge Qgs VDD=480V, ID=7.3A - 3 - nC
Gate to drain charge Qgd - 9.2 -
Gate charge total Qg VDD=480V, ID=7.3A, - 21 27
VGS=0 to 10V

Gate plateau voltage V(plateau) VDD=480V, ID=7.3A - 5.5 - V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
5C
o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.

Rev. 1.92 Page 3 2010-12-21

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Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25°C - - 7.3 A
forward current
Inverse diode direct current, ISM - - 21.9
pulsed
Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V
Reverse recovery time trr VR=480V, IF=IS , - 400 600 ns
Reverse recovery charge Qrr diF/dt=100A/μs - 4 - μC
Peak reverse recovery current Irrm - 28 - A
Peak rate of fall of reverse dirr /dt Tj=25°C - 800 - A/μs
recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
SPP_I SPA SPP_I SPA
Rth1 0.024 0.024 K/W Cth1 0.00012 0.00012 Ws/K
Rth2 0.046 0.046 Cth2 0.0004578 0.0004578
Rth3 0.085 0.085 Cth3 0.000645 0.000645
Rth4 0.308 0.195 Cth4 0.001867 0.001867
Rth5 0.317 0.45 Cth5 0.004795 0.007558
Rth6 0.112 2.511 Cth6 0.045 0.412

Tj R th1 R th,n E xternal H eatsink

T case
P tot (t)

C th1 C th2 C th,n

T am b

Rev. 1.92 Page 4 2010-12-21

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1 Power dissipation 2 Power dissipation FullPAK

Ptot = f (TC) Ptot = f (TC)

SPP07N65C3
100 34
W W

28
80

70 24
Ptot

Ptot
60 20

50
16

40
12
30
8
20

4
10

0 0
0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
TC TC

3 Safe operating area 4 Safe operating area FullPAK

ID = f ( V DS ) ID = f (VDS)
parameter : D = 0 , TC =25°C parameter: D = 0, TC = 25°C
2
10 10 2

A A

10 1 10 1
ID

ID

10 0 10 0

tp = 0.001 ms
tp = 0.001 ms
tp = 0.01 ms
tp = 0.01 ms
10 -1 tp = 0.1 ms 10 -1 tp = 0.1 ms
tp = 1 ms
tp = 1 ms
DC
tp = 10 ms
DC

10 -2 0 1 2 3
10 -2 0 1 2 3
10 10 10 V 10 10 10 10 V 10
VDS VDS

Rev. 1.92 Page 5 2010-12-21

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5 Transient thermal impedance 6 Transient thermal impedance FullPAK

ZthJC = f (t p) ZthJC = f (t p)
parameter: D = tp/T parameter: D = tp/t
1
10 10 1

K/W K/W

10 0 10 0
ZthJC

ZthJC
10 -1 10 -1
D = 0.5
D = 0.2 D = 0.5
D = 0.1 D = 0.2
D = 0.05 D = 0.1
D = 0.02 D = 0.05
10 -2 D = 0.01 10 -2 D = 0.02
single pulse D = 0.01
single pulse

10 -3 -7 -6 -5 -4 -3 -1
10 -3 -7 -6 -5 -4 -3 -2 -1 1
10 10 10 10 10 s 10 10 10 10 10 10 10 10 s 10
tp tp

7 Typ. output characteristic 8 Typ. output characteristic

ID = f (VDS); Tj=25°C ID = f (VDS); Tj=150°C
parameter: tp = 10 μs, VGS parameter: tp = 10 μs, VGS
24 13
A
20V 20V
A 10V 8V
8V 7V 11 6.5V
10 6V

6,5V 9
16
ID

ID

8
5.5V
7
12 6V
6

5 5V
8 5,5V
4

3 4.5V
5V
4 2
4V
4,5V
1

0 0
0 5 10 15 VDS 25 0 2 4 6 8 10 12 14 16 18 20 22 V 25
V VDS

Rev. 1.92 Page 6 2010-12-21

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9 Typ. drain-source on resistance 10 Drain-source on-state resistance

RDS(on)=f(ID) RDS(on) = f (Tj)
parameter: Tj=150°C, VGS parameter : ID = 4.6 A, VGS = 10 V
SPP07N65C3
10 3.4
Ω 4V Ω

4.5V 2.8
8

RDS(on)
RDS(on)

7 2.4

5V
6 2
6V
5
6.5V 1.6
8V
4 5.5V
20V
1.2
3
0.8 98%
2
typ
0.4
1

0 0
0 2 4 6 8 10 12 A 15 -60 -20 20 60 100 °C 180
ID Tj

11 Typ. transfer characteristics 12 Typ. gate charge

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max VGS = f (Q Gate)
parameter: tp = 10 μs parameter: ID = 7.3 A pulsed
SPP07N65C3
24 16
A
V
20 25°C

18 12
VGS

16 0,2 VDS max

ID

10 0,8 VDS max

14
150°C
12 8

10
6
8

6 4

4
2
2

0 0
0 2 4 6 8 10 12 14 16 V 20 0 4 8 12 16 20 24 28 nC 34
VGS Q Gate

Rev. 1.92 Page 7 2010-12-21

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13 Forward characteristics of body diode 14 Typ. switching time

IF = f (VSD) t = f (ID), inductive load, T j=125°C
parameter: Tj , tp = 10 μs par.: V DS=380V, VGS=0/+13V, R G=12Ω
2 SPP07N65C3
10 90

ns
A
td(off)
70

10 1 60
IF

t
50

40

10 0 30
tf
Tj = 25 °C typ
td(on)
Tj = 150 °C typ 20 tr
Tj = 25 °C (98%)
Tj = 150 °C (98%) 10

10 -1 0
0 0.4 0.8 1.2 1.6 2 2.4 V 3 0 1 2 3 4 5 6 A 8
VSD ID

15 Typ. switching time 16 Typ. drain current slope

t = f (RG), inductive load, Tj=125°C di/dt = f(R G), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=7.3 A par.: V DS=380V, VGS=0/+13V, ID=7.3A
500 3000
ns
A/μs
400

350
2000
di/dt

300
t

250 td(off) 1500

200 di/dt(on)
1000
150
td(on)
100 tf
tr 500
di/dt(off)
50

0 0
0 20 40 60 80 100 Ω 130 0 20 40 60 80 100 Ω 130
RG RG

Rev. 1.92 Page 8 2010-12-21

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17 Typ. drain source voltage slope 18 Typ. switching losses

dv/dt = f(RG), inductive load, Tj = 125°C E = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=7.3A par.: V DS=380V, VGS=0/+13V, R G=12Ω
100 0.025
*) E on includes SDP06S60
V/ns diode commutation losses.

mWs
80

70
dv/dt

E
60 0.015

50
dv/dt(on)

40 0.01 Eoff

30

20 0.005
dv/dt(off) Eon*
10

0 0
0 20 40 60 80 Ω 120 0 1 2 3 4 5 6 A 8
RG ID

19 Typ. switching losses 20 Avalanche SOA

E = f(RG), inductive load, Tj=125°C IAR = f (tAR)
par.: VDS=380V, VGS=0/+13V,ID=11A par.: Tj ≤ 150 °C
0.2
*) Eon includes SDP06S60
mWs diode commutation losses.

0.16

0.14
E

0.12

0.1
Eoff
0.08

0.06
Eon*

0.04

0.02

0
0 20 40 60 80 100 Ω 130
RG

Rev. 1.92 Page 9 2010-12-21

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21 Avalanche energy 22 Drain-source breakdown voltage

EAS = f (Tj) V(BR)DSS = f (Tj)
par.: ID = 1.5 A, V DD = 50 V
SPP07N65C3
260 785
mJ V

220
745
200

V(BR)DSS
180 725
EAS

160 705
140
685
120

100 665

80 645

60
625
40
605
20

0 585
20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 180
Tj Tj

23 Avalanche power losses 24 Typ. capacitances

PAR = f (f ) C = f (VDS)
parameter: E AR=0.5mJ parameter: V GS=0V, f=1 MHz
500 10 4

pF

W Ciss
3
10
PAR

300

10 2
Coss
200

10 1
Crss
100

0 4 5 6
10 0
10 10 MHz 10 0 100 200 300 400 V 600

f VDS

Rev. 1.92 Page 10 2010-12-21

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25 Typ. Coss stored energy

Eoss=f(VDS)

5.5
μJ

4.5

4
Eoss

3.5

2.5

1.5

0.5

0
0 100 200 300 400 V 600
VDS

Definition of diodes switching characteristics

Rev. 1.92 Page 11 2010-12-21

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SPA07N65C3

PG-TO220-3

Rev. 1.92 Page 12 2010-12-21

 SPP07N65C3, SPI07N65C3
SPA07N65C3

PG-TO-220-3 (FullPAK)

Rev. 1.92 Page 13 2010-12-21

 SPP07N65C3, SPI07N65C3
SPA07N65C3

PG-TO262-3, PG-TO262-3 (I²-PAK)

Rev. 1.92 Page 14 2010-12-21

 SPP07N65C3, SPI07N65C3
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Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.

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conditions or characteristics. With respect to any examples or hints given herein, any typical
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Rev. 1.92 Page 15 2010-12-21