SPD09P06PL

SPU09P06PL

SIPMOS =Power-Transistor
Feature Product Summary

 P-Channel VDS -60 V

 Enhancement mode RDS(on) 0.25

 Logic Level ID -9.7 A

175°C operating temperature PG-TO251-3-1 PG-TO252

 Avalanche rated
 dv/dt rated

Drain
pin 2
Gate
Type Package Ordering Code pin1
SPD09P06PL PG-TO252 Q67042-S4007 Source
pin 3
SPU09P06PL PG-TO251-3-1 Q67042-S4020

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit
Continuous drain current ID A
TC=25°C -9.7
TC=100°C -6.8
Pulsed drain current ID puls -38.8
TC=25°C

Avalanche energy, single pulse EAS 70 mJ

ID =-9.7 A , VDD =-25V, RGS =25

Avalanche energy, periodic limited by Tjmax EAR 4.2

Reverse diode dv/dt dv/dt 6 kV/µs
IS =-9.7A, VDS =-48, di/dt=200A/µs, Tjmax =175°C

Gate source voltage VGS ±20 V

Power dissipation Ptot 42 W
TC=25°C

Operating and storage temperature Tj , Tstg -55... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

Rev 2.2 Page 1 2005-02-11

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SPU09P06PL
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 3.6 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 100
SMD version, device on PCB: RthJA
@ min. footprint - - 75
@ 6 cm 2 cooling area 1) - - 50

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(BR)DSS -60 - - V
VGS =0V, ID =-250µA

Gate threshold voltage, VGS = VDS VGS(th) -1 -1.5 -2

ID =-250µA

Zero gate voltage drain current IDSS µA

VDS =-60V, VGS=0V, Tj =25°C - -0.1 -1
VDS =-60V, VGS=0V, Tj =150°C - -10 -100
Gate-source leakage current IGSS - -10 -100 nA
VGS =-20V, VDS =0V

Drain-source on-state resistance RDS(on) - 0.3 0.4

VGS =-4.5V, ID =-5.4A

Drain-source on-state resistance RDS(on) - 0.2 0.25

VGS =-10V, ID =-6.8A

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.

Rev 2.2 Page 2 2005-02-11

 SPD09P06PL
SPU09P06PL
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS 2*ID *RDS(on)max , 1.8 3.5 - S
ID =-5.4

Input capacitance Ciss VGS =0V, VDS =-25V, - 360 450 pF

Output capacitance Coss f=1MHz - 103 130
Reverse transfer capacitance Crss - 40 50
Turn-on delay time td(on) VDD =-30V, VGS =-4.5V, - 11 17 ns
ID =-5.4, RG =6

Rise time tr VDD =-30V, VGS =-4.5V, - 168 252

Turn-off delay time td(off) ID =-5.4A, RG =6
- 49 74
Fall time tf - 89 134

Gate Charge Characteristics

Gate to source charge Qgs VDD =-48V, ID =-9.7A - 1.3 2 nC
Gate to drain charge Qgd - 5.1 7.5
Gate charge total Qg VDD =-48V, ID =-9.7A, - 14 21
VGS =0 to -10V

Gate plateau voltage V(plateau) VDD =-48V, ID =-9.7A - -4.1 - V

Reverse Diode
Inverse diode continuous IS TC=25°C - - -9.7 A
forward current
Inverse diode direct current, ISM - - -38.8
pulsed
Inverse diode forward voltage VSD VGS =0V, IF =-9.7A - -1.1 -1.4 V
Reverse recovery time trr VR =-30V, IF=lS, - 52 76 ns
Reverse recovery charge Qrr diF /dt=100A/µs - 64 96 nC

Rev 2.2 Page 3 2005-02-11

 SPD09P06PL
SPU09P06PL
1 Power dissipation 2 Drain current
Ptot = f (TC ) ID = f (TC )
parameter: VGS  10 V
SPD09P06PL SPD09P06PL
50 -11
W A

40 -9

-8
35
Ptot

-7

ID
30
-6
25
-5
20
-4
15
-3

10
-2

5 -1

0 0
0 20 40 60 80 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190
TC TC

3 Safe operating area 4 Transient thermal impedance

ID = f ( VDS ) ZthJC = f (tp )
parameter : D = 0 , TC = 25 °C parameter : D = tp /T
-10 2 SPD09P06PL
10 1 SPD09P06PL

K/W
tp = 11.0µs
A
10 0
Z thJC

-10 1
100 µs
ID

10 -1
D
/I
DS
V
=

D = 0.50
)
on

1 ms -2
10 0.20
(
DS
R

-10 0
10 ms
0.10
0.05
DC single pulse
0.02
10 -3
0.01

-10 -1 -1 0 1 2
10 -4 -7 -6 -5 -4 -3 -2 0
-10 -10 -10 V -10 10 10 10 10 10 10 s 10
VDS tp

Rev 2.2 Page 4 2005-02-11

 SPD09P06PL
SPU09P06PL
5 Typ. output characteristic 6 Typ. drain-source on resistance
ID = f (VDS ); Tj=25°C RDS(on) = f (ID )
parameter: tp = 80 µs parameter: VGS
SPD09P06PL SPD09P06PL
-24 Ptot = 42W 0.8
A c d e f g h i

VGS [V]

-20 kj a -2.0
b -2.5
-18 i 0.6

RDS(on)
c -3.0
d -3.5
-16
e -4.0
0.5
ID

h
-14 f -4.5
g -5.0
-12 g h -5.5 0.4
i -6.0
-10
j -7.0
f 0.3
-8 k -8.0

-6 e 0.2

-4 j k
d
0.1 VGS [V] =
c d e f g h i j k
-2 c -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -7.0 -8.0
b
0 a 0
0 -2 -4 -6 -8 V -12 0 -2 -4 -6 -8 -10 -12 -14 -16 A -20
VDS ID

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID= f ( VGS ); VDS 2 x ID x RDS(on)max gfs = f(ID ); Tj=25°C
parameter: tp = 80 µs parameter: gfs
25 4

S
A

3
g fs
ID

2.5
15

10
1.5

1
5

0.5

0 0
0 1 2 3 4 5 6 V 8 0 1 2 3 4 5 6 7 8 V 10
VGS ID

Rev 2.2 Page 5 2005-02-11

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SPU09P06PL
9 Drain-source on-state resistance 10 Gate threshold voltage
RDS(on) = f (Tj ) VGS(th) = f (Tj)
parameter : ID = -6.8 A, VGS = -10 V parameter: VGS = VDS , ID = -250 µA
SPD09P06PL
0.75 2.4

V
98 %
2
0.6
1.8
RDS(on)

V GS(th)
0.55
0.5 1.6 typ.
0.45 1.4
0.4
1.2
0.35 2%
98% 1
0.3
0.25 0.8
typ
0.2 0.6
0.15
0.4
0.1
0.05 0.2

0 0
-60 -20 20 60 100 140 °C 200 -60 -20 20 60 100 °C 180
Tj Tj

11 Typ. capacitances 12 Forward character. of reverse diode

C = f (VDS) IF = f (VSD )
parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs
3
10 -10 2 SPD09P06PL

A
Ciss
pF

-10 1
IF
C

Coss
10 2

Crss
-10 0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)

10 1 -10 -1
0 -5 -10 -15 -20 V -30 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3
VDS VSD

Rev 2.2 Page 6 2005-02-11

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SPU09P06PL
13 Typ. avalanche energy 14 Typ. gate charge
EAS = f (Tj ) VGS = f (QGate )
par.: ID = -9.7 A , VDD = -25 V, RGS = 25
parameter: ID = -9.7 A pulsed
SPD09P06PL
80 -16

mJ V

60 -12
E AS

VGS
50 -10 0,2 VDS max
0,8 VDS max

40 -8

30 -6

20 -4

10 -2

0 0
25 45 65 85 105 125 145 °C 185 0 4 8 12 16 20 nC 28
Tj QGate

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj )

SPD09P06PL
-72

-68
V (BR)DSS

-66

-64

-62

-60

-58

-56

-54
-60 -20 20 60 100 140 °C 200
Tj

Rev 2.2 Page 7 2005-02-11

 SPD09P06PL
SPU09P06PL

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Infineon Technologies AG,
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D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

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Rev 2.2 Page 8 2005-02-11