JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-220F Plastic-Encapsulate Transistors

2SD2396 TRANSISTOR (NPN) TO – 220F

FEATURES
 Available in TO-220 F package
 Darling connection provides high dc current gain (hFE)
1. BASE 1 2
 Large collector power dissipation 3

 Low frequency and Power amplifier 2. COLLECTOR

3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 3 A
PC Collector Power Dissipation 2 W
RθJA Thermal Resistance from Junction to Ambient 62.5 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltag V(BR)CBO IC=50μA, IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 60 V

Emitter-base breakdown voltage V(BR)EBO IE=50u A,IC=0 6 V

Collector cut-off current ICBO VCB=80V,IE=0 100 μA

Emitter cut-off current IEBO VEB=6V,IC=0 100 μA

*
DC current gain hFE VCE=4V, IC=0.5A 400 2000
*
Collector-emitter saturation voltage VCE(sat) IC=2A,IB=50mA 0.8 V

Base-emitter saturation voltage VBE(sat) IC=2A,IB=50mA 1.5 V

Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 55 pF

Transition frequency fT VCE=5V,IC=0.2A,f=10MHz 40 MHz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

CLASSIFICATION OF hFE*
RANK H J K
RANGE 400-800 600-1200 1000-2000

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Typical Characteristics

Static Characteristic hFE —— IC

1.1 10000
COMMON
1.0 EMITTER 1mA
Ta=25℃
0.9 0.9mA
(A)

0.8mA

hFE
0.8
IC

0.7mA Ta=100℃

DC CURRENT GAIN
0.7
COLLECTOR CURRENT

0.6mA
0.6
0.5mA 1000 Ta=25℃
0.5
0.4mA
0.4

0.3 0.3mA

0.2 0.2mA

0.1 COMMON EMITTER

IB=0.1mA VCE=4V
0.0 100
0 1 2 3 4 5 6 10 100 1000 3000

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

VCEsat —— IC VBEsat —— IC
200 1200

175
1000
COLLECTOR-EMITTER SATURATION

BASE-EMITTER SATURATION
150 VOLTAGE VBEsat (mV)
Ta=25℃
VOLTAGE VCEsat (mV)

Ta=100℃ 800
125

100 600

75 Ta=100℃
400

50
Ta=25℃
200
25

β=40 β=40
0 0
100 1000 3000 100 1000 3000

COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

IC —— VBE Cob/ Cib —— VCB/ VEB

3000 10000
COMMON EMITTER f=1MHz
VCE=4V IE=0/IC=0
1000 Ta=25℃
(mA)

1000
(pF)

Cib
IC

C
COLLCETOR CURRENT

0℃

CAPACITANCE
a 25

100
a 10

T=
T=

100
Cob

10

10 1
0 100 200 300 400 500 600 700 800 900 1000 1100 1200 0.1 1 10 30

BASE-EMMITER VOLTAGE VBE (mV) REVERSE VOLTAGE V (V)

PC —— Ta
3000

2500
COLLECTOR POWER DISSIPATION

2000
PC (mW)

1500

1000

500

0
0 25 50 75 100 125 150

AMBIENT TEMPERATURE Ta (℃ )

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 TO-220F Package Outline Dimensions

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 4.300 4.700 0.169 0.185
A1 1.300 REF. 0.051 REF.
A2 2.800 3.200 0.110 0.126
A3 2.500 2.900 0.098 0.114
b 0.500 0.750 0.020 0.030
b1 1.100 1.350 0.043 0.053
b2 1.500 1.750 0.059 0.069
c 0.500 0.750 0.020 0.030
D 9.960 10.360 0.392 0.408
E 14.800 15.200 0.583 0.598
e 2.540 TYP. 0.100 TYP.
F 2.700 REF. 0.106 REF.
Ф 3.500 REF. 0.138 REF.
h 0.000 0.300 0.000 0.012
h1 0.800 REF. 0.031 REF.
h2 0.500 REF. 0.020 REF.
L 28.000 28.400 1.102 1.118
L1 1.700 1.900 0.067 0.075
L2 0.900 1.100 0.035 0.043

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