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Vishay Semiconductors
Schottky Rectifier, 2 x 30 A
Base FEATURES
common
cathode • 175 °C TJ operation
2 • Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
1 3
TO-247AC Anode Anode term reliability
1 2 2
Common • Compliant to RoHS Directive 2002/95/EC
cathode
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
PRODUCT SUMMARY (-N3 only)
Package TO-247AC
IF(AV) 2 x 30 A DESCRIPTION
VR 100 V The VS-63CPQ100... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
VF at IF 0.64 V
The proprietary barrier technology allows for reliable
IRM max. 25 mA at 125 °C operation up to 175 °C junction temperature. Typical
TJ max. 175 °C applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Diode variation Common cathode
EAS 15 mJ
VOLTAGE RATINGS
PARAMETER SYMBOL VS-63CPQ100PbF VS-63CPQ100-N3 UNITS
Maximum DC reverse voltage VR
100 100 V
Maximum working peak reverse voltage VRWM
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
30 A 0.77
TJ = 25 °C
Maximum forward voltage drop per leg 60 A 0.92
VFM (1) V
See fig. 1 30 A 0.64
TJ = 125 °C
60 A 0.76
Maximum reverse leakage current per leg TJ = 25 °C 0.3
IRM (1) VR = Rated VR mA
See fig. 2 TJ = 125 °C 25
Threshold voltage VF(TO) 0.38 V
TJ = TJ maximum
Forward slope resistance rt 5.75 m
Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1300 pF
Typical series inductance per leg LS Measured lead to lead 5 mm from package body 7.5 nH
Maximum voltage rate of change dV/dt Rated VR 10 000 V/µs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
1000 1000
TJ = 175 °C
TJ = 150 °C TJ = 125 °C
100 10
TJ = 175 °C 1 TJ = 100 °C
TJ = 125 °C TJ = 75 °C
TJ = 25 °C
10 0.1
TJ = 50 °C
0.01
TJ = 25 °C
1 0.001
0 0.3 0.6 0.9 1.2 1.5 0 20 40 60 80 100
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
0 20 40 60 80 100 120
1.0
ZthJC - Thermal Impedance (°C/W)
PDM
0.1
D = 0.75 t1
D = 0.50
t2
D = 0.33
D = 0.25
D = 0.20 Notes:
Single pulse
1. Duty factor D = t1/t2
(thermal resistance)
2. Peak TJ = PDM x ZthJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100
180 30
Allowable Case Temperature (°C)
D = 0.20
D = 0.25
25
150 15
130 5
See note (1)
120 0
0 10 20 30 40 50 0 10 20 30 40 50
IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Fig. 6 - Forward Power Loss Characteristics
Average Forward Current
IFSM - Non-Repetitive Surge Current (A)
10 000
1000
100
10 100 1000 10 000
High-speed
IRFP460 switch
D.U.T.
Rg = 25 Ω Freewheel
diode + Vd = 25 V
Current
monitor 40HFL40S02
Note
(1) Formula used: T = T - (Pd + Pd
C J REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
1 2 3 4 5 6 7
A A
(3)
E (6) Ø P (Datum B)
B
N S A2 Ø K M DBM
(2) R/2 FP1
A
D2
Q
2xR
D D1 (4)
(2)
1 2 3 D 4
Thermal pad
(5) L1
C L (4)
E1
See view B A
0.01 M D B M
2 x b2 C View A - A
2x e
3xb
b4 A1
0.10 M C A M
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