Ipp023n10n5 Dte

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª5Power-Transistor,100V
IPP023N10N5
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
IPP023N10N5
1Description TO-220-3
Features tab
•N-channel,normallevel
•OptimizedforFOMOSS
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
Table1KeyPerformanceParameters
Drain
Parameter Value Unit Pin 2, Tab
VDS 100 V
RDS(on),max 2.3 mΩ Gate
Pin 1
ID 120 A Source
Pin 3
Type/OrderingCode Package Marking RelatedLinks

IPP023N10N5 PG-TO220-3 023N10N5 -
1)
J-STD20 and JESD22
Final Data Sheet 2 Rev.2.1,2014-05-05
IPP023N10N5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

IPP023N10N5
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 120 TC=25°C
Continuous drain current ID A
- - 120 TC=100°C
Pulsed drain current1) ID,pulse - - 480 A TC=25°C
Avalanche energy, single pulse EAS - - 979 mJ ID=100A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 375 W TC=25°C
IEC climatic category;
Operating and storage temperature Tj,Tstg -55 - 175 °C
DIN IEC 68-1: 55/175/56
3Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Thermal resistance, junction - case RthJC - 0.3 0.4 K/W -
Thermal resistance, junction - ambient,
RthJA - - 62 K/W -
minimal footprint
Thermal resistance, junction - ambient,
RthJA - - 40 K/W -
6 cm2 cooling area2)
Soldering temperature, wave and
Tsold - - 260 °C reflow MSL1
reflow soldering are allowed
1)
see figure 3
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
IPP023N10N5
4Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS,ID=270µA
- 0.1 7 VDS=100V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=100V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V
- 2.0 2.3 VGS=10V,ID=100A
Drain-source on-state resistance RDS(on) mΩ
- 2.3 2.8 VGS=6V,ID=50A
Gate resistance1) RG - 1.3 2.0 Ω -
Transconductance gfs 124 248 - S |VDS|>2|ID|RDS(on)max,ID=100A
Table5Dynamiccharacteristics1)
Values
Min. Typ. Max.
Input capacitance Ciss - 12000 15600 pF VGS=0V,VDS=50V,f=1MHz
Output capacitance Coss - 1810 2353 pF VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance Crss - 80 140 pF VGS=0V,VDS=50V,f=1MHz
VDD=50V,VGS=10V,ID=100A,
Turn-on delay time td(on) - 33 - ns
RG,ext=1.6Ω
Rise time tr - 26 - ns
RG,ext=1.6Ω
Turn-off delay time td(off) - 77 - ns
RG,ext=1.6Ω
Fall time tf - 29 - ns
RG,ext=1.6Ω
Table6Gatechargecharacteristics2)
Values
Min. Typ. Max.
Gate to source charge Qgs - 54 - nC VDD=50V,ID=100A,VGS=0to10V
Gate to drain charge 1)
Qgd - 34 58 nC VDD=50V,ID=100A,VGS=0to10V
Switching charge Qsw - 52 - nC VDD=50V,ID=100A,VGS=0to10V
Gate charge total Qg - 168 210 nC VDD=50V,ID=100A,VGS=0to10V
Gate plateau voltage Vplateau - 4.5 - V VDD=50V,ID=100A,VGS=0to10V
Output charge 1)
Qoss - 213 283 nC VDD=50V,VGS=0V
1)
Defined by design. Not subject to production test
2)
See ″Gate charge waveforms″ for parameter definition
IPP023N10N5
Table7Reversediode
Values
Min. Typ. Max.
Diode continous forward current IS - - 120 A TC=25°C
Diode pulse current IS,pulse - - 480 A TC=25°C
Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=100A,Tj=25°C
Reverse recovery time 1)
trr - 99 198 ns VR=50V,IF=IS,diF/dt=100A/µs
Reverse recovery charge 1)
Qrr - 287 574 nC VR=50V,IF=IS,diF/dt=100A/µs
1)
Defined by design. Not subject to production test
IPP023N10N5
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation Diagram2:Draincurrent
400 140
120
300
100
80
Ptot[W]
ID[A]
200
60
40
100
20
0 0
0 50 100 150 200 0 50 100 150 200
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100
1 µs
10 µs
10 ms 100 µs
102
0.5
ZthJC[K/W]
1 ms
ID[A]
101 10-1 0.2
0.1
DC 0.05
100
0.02
0.01 single pulse
10-1 10-2
10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

IPP023N10N5
Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
400 5
10 V 8V 4.5 V 5V
6V
4
300
5V 3
RDS(on)[mΩ]
ID[A]
200 6V
8V
2
10 V
100
4.5 V
1
0 0
0 1 2 3 4 5 0 50 100 150 200 250 300 350
VDS[V] ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance
480 150
440
400
360
320 100
280
gfs[S]
ID[A]
240
200
160 50
120
80
40
175 °C 25 °C
0 0
0 2 4 6 8 0 10 20 30
VGS[V] ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj gfs=f(ID);Tj=25°C

IPP023N10N5
Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage
5.0 4.0
4.5
3.5
4.0
3.0
3.5 270 µA
2.5
3.0 27 µA
RDS(on)[mΩ]
max
VGS(th)[V]
2.5 2.0
typ
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0 0.0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj[°C] Tj[°C]
RDS(on)=f(Tj);ID=100A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
5
10 103
25 °C
175 °C
25 °C max
175 °C max
Ciss
104
102
Coss
C[pF]
IF[A]
3
10
101
Crss
102
101 100
0 20 40 60 80 0.0 0.5 1.0 1.5 2.0
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

IPP023N10N5
Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
103 10
80 V
8
50 V
6
20 V
VGS[V]
IAS[A]
102
4
100 °C 25 °C
150 °C
101 0
100 101 102 103 0 50 100 150 200
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=100Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms

115
110
105
VBR(DSS)[V]
100
95
90
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

IPP023N10N5
6PackageOutlines
Figure1OutlinePG-TO220-3,dimensionsinmm/inches

IPP023N10N5
RevisionHistory
IPP023N10N5
Revision:2014-05-05,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2014-05-05 Release of Final Version
WeListentoYourComments
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improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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MOSFET

Type/OrderingCode Package Marking RelatedLinks

Final Data Sheet 3 Rev.2.1,2014-05-05

101 10-1 0.2

0.01 single pulse

Final Data Sheet 7 Rev.2.1,2014-05-05

Final Data Sheet 8 Rev.2.1,2014-05-05

Final Data Sheet 9 Rev.2.1,2014-05-05

Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms

Final Data Sheet 10 Rev.2.1,2014-05-05

Final Data Sheet 11 Rev.2.1,2014-05-05

Final Data Sheet 12 Rev.2.1,2014-05-05

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