IPZA60R024P7

MOSFET
600VCoolMOS™P7PowerTransistor PG-TO247-4-3

TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor
highvoltagepowerMOSFETs,designedaccordingtothesuperjunction
(SJ)principleandpioneeredbyInfineonTechnologies.The600V tab
CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It
combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease 1
2
ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody 34

diodeagainsthardcommutationandexcellentESDcapability.
Furthermore,extremelylowswitchingandconductionlossesmake
switchingapplicationsevenmoreefficient,morecompactandmuch
cooler.

Features Drain

•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding Pin 1

 commutationruggedness
•Significantreductionofswitchingandconductionlosses Gate
•ExcellentESDrobustness>2kV(HBM)forallproducts Pin 4
Driver
•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya Source
Power
Pin 3
 lowRDS(on)*A(below1Ohm*mm²) Source
Pin 2

Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage
 acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction
 losses
•Increasedpowerdensitysolutionsenabledbyusingproductswith
 smallerfootprintandhighermanufacturingqualitydueto>2kVESD
 protection
•Suitableforawidevarietyofapplicationsandpowerranges

Potentialapplications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom
andUPS.

Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 24 mΩ
Qg,typ 164 nC
ID,pulse 386 A
Eoss @ 400V 16.7 µJ
Body diode diF/dt 900 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPZA60R024P7 PG-TO 247-4-3 60R024P7 see Appendix A

Final Data Sheet 1 Rev.2.0,2019-02-28

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet 2 Rev.2.0,2019-02-28

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1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 101 TC=25°C
Continuous drain current1) ID A
- - 63 TC=100°C
Pulsed drain current2) ID,pulse - - 386 A TC=25°C
Avalanche energy, single pulse EAS - - 406 mJ ID=12.2A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 2.03 mJ ID=12.2A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 12.2 A -
MOSFET dv/dt ruggedness dv/dt - - 80 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 291 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque - - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current IS - - 101 A TC=25°C
Diode pulse current 2)
IS,pulse - - 386 A TC=25°C
VDS=0...400V,ISD<=101A,Tj=25°C
Reverse diode dv/dt3) dv/dt - - 50 V/ns
see table 8
VDS=0...400V,ISD<=101A,Tj=25°C
Maximum diode commutation speed diF/dt - - 900 A/µs
see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1)
Limited by Tj,max. Maximum Duty Cycle D = 0.50
2)
Pulse width tp limited by Tj,max
3)
Identical low side and high side switch with identical RG
Final Data Sheet 3 Rev.2.0,2019-02-28
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2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.43 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambient
RthJA - - - °C/W -
for SMD version
Soldering temperature, wavesoldering
Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
only allowed at leads

Final Data Sheet 4 Rev.2.0,2019-02-28

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3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=2.03mA
- - 1 VDS=600V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 - VDS=600V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 0.020 0.024 VGS=10V,ID=42A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.047 - VGS=10V,ID=42A,Tj=150°C
Gate resistance RG - 2.7 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 7144 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 114 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
Co(er) - 209 - pF VGS=0V,VDS=0...400V
related1)
Effective output capacitance, time
Co(tr) - 2136 - pF ID=constant,VGS=0V,VDS=0...400V
related2)
VDD=400V,VGS=13V,ID=42.0A,
Turn-on delay time td(on) - 47 - ns
RG=1.8Ω;seetable9
VDD=400V,VGS=13V,ID=42.0A,
Rise time tr - 6.4 - ns
RG=1.8Ω;seetable9
VDD=400V,VGS=13V,ID=42.0A,
Turn-off delay time td(off) - 175 - ns
RG=1.8Ω;seetable9
VDD=400V,VGS=13V,ID=42.0A,
Fall time tf - 22 - ns
RG=1.8Ω;seetable9

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 37 - nC VDD=400V,ID=42.0A,VGS=0to10V
Gate to drain charge Qgd - 50 - nC VDD=400V,ID=42.0A,VGS=0to10V
Gate charge total Qg - 164 - nC VDD=400V,ID=42.0A,VGS=0to10V
Gate plateau voltage Vplateau - 5.2 - V VDD=400V,ID=42.0A,VGS=0to10V

1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 5 Rev.2.0,2019-02-28
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Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=42.0A,Tj=25°C
VR=400V,IF=10A,diF/dt=100A/µs;
Reverse recovery time trr - 330 - ns
see table 8
VR=400V,IF=10A,diF/dt=100A/µs;
Reverse recovery charge Qrr - 5.6 - µC
see table 8
VR=400V,IF=10A,diF/dt=100A/µs;
Peak reverse recovery current Irrm - 34 - A
see table 8

Final Data Sheet 6 Rev.2.0,2019-02-28

 600VCoolMOS™P7PowerTransistor
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4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
300 103

1 µs
250 102
10 µs

200 101
100 µs
Ptot[W]

ID[A]
150 100
1 ms

100 10-1
10 ms

DC
50 10-2

0 10-3
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100

102 1 µs
0.5
10 µs

101 10-1 0.2

100 µs
ZthJC[K/W]

0.1
ID[A]

0
10 0.05
1 ms
0.02
0.01
10-1 10-2
10 ms
single pulse
-2 DC
10

10-3 10-3
100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 7 Rev.2.0,2019-02-28

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Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
450 300
20 V
20 V
400 10 V
10 V
250
8V 8V
350

7V 7V
300 200
6V
250
ID[A]

ID[A]
150
200
5.5 V

150 6V 100

100 5V
5.5 V 50
50
5V 4.5 V
4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.080 3.000

6V
5.5 V 6.5 V 7 V 2.500
10 V
0.070
20 V
2.000
RDS(on)[normalized]
RDS(on)[Ω]

0.060 1.500

1.000

0.050

0.500

0.040 0.000
0 50 100 150 200 250 300 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=42.0A;VGS=10V

Final Data Sheet 8 Rev.2.0,2019-02-28

 600VCoolMOS™P7PowerTransistor
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Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
500 12

10
400

25 °C
8
120 V 400 V
300

VGS[V]
ID[A]

150 °C 6

200

100
2

0 0
0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 180 200
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=42.0Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
3
10 500

400
102

25 °C 300
EAS[mJ]
IF[A]

125 °C
101

200

100
100

10-1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj EAS=f(Tj);ID=12.2A;VDD=50V

Final Data Sheet 9 Rev.2.0,2019-02-28

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Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
690 105

680

670

660 104
Ciss
650

640

630 103
VBR(DSS)[V]

C[pF]
620

610
Coss
600 102

590

580 Crss
570 101

560

550

540 100
-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy
25

20

15
Eoss[µJ]

10

0
0 100 200 300 400 500
VDS[V]
Eoss=f(VDS)

Final Data Sheet 10 Rev.2.0,2019-02-28

 600VCoolMOS™P7PowerTransistor
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5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

Rg1

VDS

Rg 2

IF
Rg1 = Rg 2

Table9Switchingtimes(ss)
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS

ID VDS

VDS VDS
ID

Final Data Sheet 11 Rev.2.0,2019-02-28

 600VCoolMOS™P7PowerTransistor
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6PackageOutlines

PG-TO247-4-3

MILLIMETERS
DIMENSIONS
MIN. MAX.
A 4.90 5.10
A1 2.31 2.51
A2 1.90 2.10
A3 0.05 0.25
b 1.10 1.30
b1 0.65 0.79
b2 - 0.20
b3 1.34 1.44
c 0.58 0.66
D 20.90 21.10
D1 16.25 16.85
DOCUMENT NO.
D2 1.05 1.35
Z8B00184785
D3 24.97 25.27
D4 4.90 5.10 REVISION
E 15.70 15.90 03
E1 13.10 13.50
E2 2.40 2.60 SCALE 2:1
e1 5.08 0 5 10mm
e2 2.79
e3 2.54
L 19.80 20.10
L1 - 4.30 EUROPEAN PROJECTION
øP 3.50 3.70
øP1 7.00 7.40
øP2 2.40 2.60
Q 5.60 6.00
S 6.15
T 9.80 10.20 ISSUE DATE
U 6.00 6.40 21.08.2017

Figure 1 Outline PG-TO 247-4-3, dimensions in mm

Final Data Sheet 12 Rev.2.0,2019-02-28

 600V CoolMOS™ P7 Power Transistor
IPZA60R024P7

7 Appendix A

Table 11 Related Links

• IFX CoolMOS P7 Webpage: www.infineon.com

• IFX CoolMOS P7 application note: www.infineon.com

• IFX CoolMOS P7 simulation model: www.infineon.com

• IFX Design tools: www.infineon.com

Final Data Sheet 13 Rev. 2.0, 2019-02-28

 600V CoolMOS™ P7 Power Transistor
IPZA60R024P7

Revision History
IPZA60R024P7

Revision: 2019-02-28, Rev. 2.0

Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2019-02-28 Release of final version

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© 2018 Infineon Technologies AG
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please contact the nearest Infineon Technologies Office.
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Final Data Sheet 14 Rev. 2.0, 2019-02-28