MOSFET

MetalOxideSemiconductorFieldEffectTransistor

CoolMOS™CE
800VCoolMOS™CEPowerTransistor
IPA80R650CE

DataSheet
Rev.2.1
Final

PowerManagement&Multimarket
 800VCoolMOS™CEPowerTransistor

IPA80R650CE

1Description TO-220FP

CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower
MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance
andruggednesstoallowstabledesignsathighestefficiencylevel.
CoolMOS™800VCEcomeswithselectedpackagechoiceofferingthe
benefitofreducedsystemcostsandhigherpowerdensitydesigns.

Features
•Highvoltagetechnology
•Extremedv/dtrated
•Highpeakcurrentcapability
•Lowgatecharge
•Loweffectivecapacitances
Drain
•Pb-freeplating,RoHSCompliant,Halogenfreemoldcompound Pin 2, Tab
•Qualifiedforconsumergradeapplications
Gate
Applications Pin 1

LEDLightingandAdapterinQRFlybacktopology Source
Pin 3

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj=25°C 800 V
RDS(on),max 650 mΩ
Qg.typ 45 nC
ID,pulse 24 A
Eoss@400V 3.3 µJ
Body diode di/dt 400 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPA80R650CE PG-TO 220 FullPAK 8R650CE see Appendix A

Final Data Sheet 2 Rev.2.1,2015-06-23

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Final Data Sheet 3 Rev.2.1,2015-06-23

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IPA80R650CE

2Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 8.0 TC = 25°C
Continuous drain current1) ID A
- - 5.1 TC = 100°C
Pulsed drain current2) ID,pulse - - 24 A TC=25°C
Avalanche energy, single pulse EAS - - 340 mJ ID=1.6A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.20 mJ ID=1.6A; VDD=50V; see table 10
Avalanche current, repetitive IAR - - 1.60 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...640V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 33 W TC=25°C
Storage temperature Tstg -40 - 150 °C -
Operating junction temperature Tj -40 - 150 °C -
Mounting torque - - - 50 Ncm M2.5 screws
Continuous diode forward current IS - - 8.0 A TC=25°C
Diode pulse current2) IS,pulse - - 24 A TC=25°C
VDS=0...400V,ISD<=IS,Tj=25°C
Reverse diode dv/dt3) dv/dt - - 4 V/ns
see table 8
VDS=0...400V,ISD<=IS,Tj=25°C
Maximum diode commutation speed dif/dt - - 400 A/µs
see table 8
Insulation withstand voltage for
VISO - - 2500 V Vrms,TC=25°C,t=1min
TO-220FP

1)
Limited by Tj max <150°C.
2)
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet 4 Rev.2.1,2015-06-23
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3Thermalcharacteristics

Table3ThermalcharacteristicsTO-220FullPAK
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 3.8 °C/W -
Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded
Soldering temperature, wavesoldering
Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
only allowed at leads

Final Data Sheet 5 Rev.2.1,2015-06-23

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4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 800 - - V VGS=0V,ID=0.25mA
Gate threshold voltage V(GS)th 2.1 3.0 3.9 V VDS=VGS,ID=0.47mA
- - 20 VDS=800,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 100 - VDS=800,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 0.56 0.65 VGS=10V,ID=5.1A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 1.50 - VGS=10V,ID=5.1A,Tj=150°C
Gate resistance RG - 1.2 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 1100 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 46 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
Co(er) - 36 - pF VGS=0V,VDS=0...480V
energy related1)
Effective output capacitance,
Co(tr) - 99 - pF ID=constant,VGS=0V,VDS=0...480V
time related2)
VDD=400V,VGS=10V,ID=8A,
Turn-on delay time td(on) - 25 - ns
RG=10Ω;seetable9
VDD=400V,VGS=10V,ID=8A,
Rise time tr - 15 - ns
RG=10Ω;seetable9
VDD=400V,VGS=10V,ID=8A,
Turn-off delay time td(off) - 72 - ns
RG=10Ω;seetable9
VDD=400V,VGS=10V,ID=8A,
Fall time tf - 10 - ns
RG=10Ω;seetable9

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 6 - nC VDD=640V,ID=8A,VGS=0to10V
Gate to drain charge Qgd - 22 - nC VDD=640V,ID=8A,VGS=0to10V
Gate charge total Qg - 45 - nC VDD=640V,ID=8A,VGS=0to10V
Gate plateau voltage Vplateau - 5.5 - V VDD=640V,ID=8A,VGS=0to10V

1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V
Final Data Sheet 6 Rev.2.1,2015-06-23
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IPA80R650CE

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 1 - V VGS=0V,IF=8A,Tj=25°C
VR=400V,IF=8A,diF/dt=100A/µs;
Reverse recovery time trr - 550 - ns
see table 8
VR=400V,IF=8A,diF/dt=100A/µs;
Reverse recovery charge Qrr - 7 - µC
see table 8
VR=400V,IF=8A,diF/dt=100A/µs;
Peak reverse recovery current Irrm - 24 - A
see table 8

Final Data Sheet 7 Rev.2.1,2015-06-23

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IPA80R650CE

5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
35 102
1 µs

30 10 µs
101
100 µs
1 ms
25
100 10 ms

20
Ptot[W]

ID[A]
10-1 DC

15

10-2
10

10-3
5

0 10-4
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
2
10 101

1 µs
1
10 10 µs
0.5
100 µs
1 ms
100 100 0.2
10 ms
ZthJC[K/W]

0.1
ID[A]

10-1 DC
0.05

0.02
10-2 10-1

0.01

10-3 single pulse

10-4 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1 100 101
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 8 Rev.2.1,2015-06-23

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Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
30 15
20 V
20 V 10 V
10 V
25
12 6V

20
5.5 V
9
ID[A]

ID[A]
15
6.5 V
5V
6
10 6V
4.5 V
5.5 V 3
5
5V

0 0
0 5 10 15 20 25 0 5 10 15 20 25
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;tp=10µs;parameter:VGS ID=f(VDS);Tj=150°C;tp=10µs;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
2.8 1.60
1.50
1.40
1.30
2.4
1.20
1.10
1.00
RDS(on)[Ω]

RDS(on)[Ω]

2.0 0.90 typ

4.5 V 5V 5.5 V 6V 98%
0.80
6.5 V 0.70
0.60
1.6
20 V 0.50
10 V
0.40
0.30
1.2 0.20
0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=150°C;parameter:VGS RDS(on)=f(Tj);ID=5.1A;VGS=10V

Final Data Sheet 9 Rev.2.1,2015-06-23

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IPA80R650CE

Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
30 10

9
25 25 °C
8
160 V 640 V
7
20
6

VGS[V]
ID[A]

15 5
150 °C
4
10
3

2
5
1

0 0
0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45
VGS[V] Qgate[nC]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;tp=10µs;parameter:Tj VGS=f(Qgate);ID=8.0Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
2
10 350
25 °C
150 °C
300

250
101

200
EAS[mJ]
IF[A]

150

100
100

50

10-1 0
0.0 0.5 1.0 1.5 2.0 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);tp=10µs;parameter:Tj EAS=f(Tj);ID=1.6A;VDD=50V

Final Data Sheet 10 Rev.2.1,2015-06-23

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IPA80R650CE

Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
960 104
940
920
900 Ciss
103
880
860
840
VBR(DSS)[V]

C[pF]
820 102
800 Coss
780
760
101
740 Crss

720
700
680 100
-75 -50 -25 0 25 50 75 100 125 150 175 0 100 200 300 400 500
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=0.25mA C=f(VDS);VGS=0V;f=1MHz

Diagram15:Typ.Cossstoredenergy
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
Eoss[µJ]

4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 100 200 300 400 500 600 700 800
VDS[V]
Eoss=f(VDS)

Final Data Sheet 11 Rev.2.1,2015-06-23

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IPA80R650CE

6TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

V ,I
Rg1 VDS( peak)
VDS
VDS

VDS IF
trr
tF tS
Rg 2 dIF / dt
IF t
QF QS 10 %Irrm
IF dIrr / dt trr =tF +tS
Irrm Qrr = QF + QS
Rg1 = Rg 2

Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS
ID VDS

VDS VDS
ID

Final Data Sheet 12 Rev.2.1,2015-06-23

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IPA80R650CE

7PackageOutlines

/,..,/*6*45 ,0(+*5
),/
MIN MAX MIN MAX )1(7/*06 01"
' 4.50 4.90 0.177 0.193 Z8B00003319
'# 2.34 2.85 0.092 0.112
'$ 2.42 2.86 0.095 0.113 5('.* 0
9 0.65 0.90 0.026 0.035
9# 0.95 1.38 0.037 0.054 2.5
9$ 0.95 1.51 0.037 0.059
9% 0.65 1.38 0.026 0.054 0 2.5
9& 0.65 1.51 0.026 0.059 5mm
; 0.40 0.63 0.016 0.025
) 15.67 16.15 0.617 0.636
*7412*'0 241-*(6,10
)# 8.97 9.83 0.353 0.387
* 10.00 10.65 0.394 0.419
= 2.54 (BSC) 0.100 (BSC)
=# 5.08 0.200
0 3 3
+ 28.70 29.75 1.130 1.171 ,557* )'6*
. 12.78 13.75 0.503 0.541 05-05-2014
.# 2.83 3.45 0.111 0.136
@3 2.95 3.38 0.116 0.133 4*8,5,10
3 3.15 3.50 0.124 0.138 04

Dimensions do not include mold flash, protrusions or gate burrs

Figure 1 Outline PG-TO 220 FullPAK, dimensions in mm/inches

Final Data Sheet 13 Rev.2.1,2015-06-23

 800V CoolMOS™ CE Power Transistor

IPA80R650CE

8 Appendix A

Table 11 Related Links

• IFX CoolMOS TM CE Webpage: www.infineon.com

• IFX CoolMOS TM CE application note: www.infineon.com

• IFX CoolMOS TM CE simulation model: www.infineon.com

• IFX Design tools: www.infineon.com

Final Data Sheet 14 Rev. 2.1, 2015-06-23

 800V CoolMOS™ CE Power Transistor

IPA80R650CE

Revision History
IPA80R650CE

Revision: 2015-06-23, Rev. 2.1

Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2014-09-25 Release of final version
2.1 2015-06-23 Continuous current Id update

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Published by
Infineon Technologies AG
81726 München, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With
respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application
of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without
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Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com ).

Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.

Final Data Sheet 15 Rev. 2.1, 2015-06-23