IPA126N10NM3S

MOSFET
OptiMOSTM3Power-Transistor,100V PG-TO220FP

Features
•Idealforhighfrequencyswitchingandsync.rec.
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21

Productvalidation
QualifiedaccordingtoJEDECStandard Drain
Pin 2

Table1KeyPerformanceParameters Gate
Parameter Value Unit Pin 1

VDS 100 V Source

Pin 3
RDS(on),max 12.6 mΩ
ID 39 A
Qoss 35 nC
QG(0V..10V) 26 nC

Type/OrderingCode Package Marking RelatedLinks

IPA126N10NM3S PG-TO 220 FullPAK 126N103S -

Final Data Sheet 1 Rev.2.1,2019-09-02

 OptiMOSTM3Power-Transistor,100V
IPA126N10NM3S

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Final Data Sheet 2 Rev.2.1,2019-09-02

 OptiMOSTM3Power-Transistor,100V
IPA126N10NM3S

1Maximumratings
atTA=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 39 VGS=10V,TC=25°C
Continuous drain current ID A
- - 28 VGS=10V,TC=100°C
Pulsed drain current1) ID,pulse - - 156 A TC=25°C
Avalanche energy, single pulse 2)
EAS - - 90 mJ ID=39A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 33 W TC=25°C
IEC climatic category; DIN IEC 68-1:
Operating and storage temperature Tj,Tstg -55 - 175 °C
55/175/56

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 4.5 °C/W -

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2 2.7 3.5 V VDS=VGS,ID=46µA
- 0.1 1 VDS=100V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=100V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V
- 10.9 12.6 VGS=10V,ID=39A
Drain-source on-state resistance RDS(on) mΩ
- 13.6 - VGS=6V,ID=20A
Gate resistance3) RG - 1.1 - Ω -
Transconductance gfs - 53 - S |VDS|≥2|ID|RDS(on)max,ID=39A

1)
See Diagram 3 for more detailed information
2)
See Diagram 13 for more detailed information
3)
Defined by design. Not subject to production test.
Final Data Sheet 3 Rev.2.1,2019-09-02
 OptiMOSTM3Power-Transistor,100V
IPA126N10NM3S

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance1) Ciss - 1900 2500 pF VGS=0V,VDS=50V,f=1MHz
Output capacitance Coss - 330 - pF VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance Crss - 14 - pF VGS=0V,VDS=50V,f=1MHz
VDD=50V,VGS=10V,ID=39A,
Turn-on delay time td(on) - 12 - ns
RG,ext=1.6Ω
VDD=50V,VGS=10V,ID=39A,
Rise time tr - 6 - ns
RG,ext=1.6Ω
VDD=50V,VGS=10V,ID=39A,
Turn-off delay time td(off) - 20 - ns
RG,ext=1.6Ω
VDD=50V,VGS=10V,ID=39A,
Fall time tf - 4 - ns
RG,ext=1.6Ω

Table6Gatechargecharacteristics2)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 9 - nC VDD=50V,ID=39A,VGS=0to10V
Gate charge at threshold Qg(th) - 5 - nC VDD=50V,ID=39A,VGS=0to10V
Gate to drain charge Qgd - 5 - nC VDD=50V,ID=39A,VGS=0to10V
Switching charge Qsw - 9 - nC VDD=50V,ID=39A,VGS=0to10V
Gate charge total 1)
Qg - 26 35 nC VDD=50V,ID=39A,VGS=0to10V
Gate plateau voltage Vplateau - 4.8 - V VDD=50V,ID=39A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 24 - nC VDS=0.1V,VGS=0to10V
Output charge Qoss - 35 - nC VDD=50V,VGS=0V

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 28 A TC=25°C
Diode pulse current IS,pulse - - 112 A TC=25°C
Diode forward voltage VSD - 0.93 1.2 V VGS=0V,IF=39A,Tj=25°C
Reverse recovery time 1)
trr - 58 - ns VR=50V,IF=39A,diF/dt=100A/µs
Reverse recovery charge 1)
Qrr - 114 - nC VR=50V,IF=39A,diF/dt=100A/µs

1)
Defined by design. Not subject to production test.
2)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 4 Rev.2.1,2019-09-02
 OptiMOSTM3Power-Transistor,100V
IPA126N10NM3S

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
35 40

35
30

30
25

25
20
Ptot[W]

ID[A]
20

15
15

10
10

5
5

0 0
0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 101
single pulse
0.01
0.02
1 µs 0.05
102
10 µs 0.1
0.2
0.5
100 µs
101 1 ms 100
ZthJC[K/W]
ID[A]

100
10 ms
DC

10-1 10-1

10-2

10-3 10-2
10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100 101
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 5 Rev.2.1,2019-09-02

 OptiMOSTM3Power-Transistor,100V
IPA126N10NM3S

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
160 35
8V
7V
10 V
140
30

120 6V
25 4.5 V 5V

100
20

RDS(on)[mΩ]
ID[A]

80

15 6V
60 7V
8V
5V 10 10 V
40

4.5 V 5
20

0 0
0 1 2 3 4 5 0 10 20 30 40 50 60 70 80
VDS[V] ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance
160 35

140
30

120
25
175 °C
100
20
RDS(on)[mΩ]
ID[A]

80

15
60
25 °C
10
40

5
20 175 °C

25 °C
0 0
0 1 2 3 4 5 6 7 0 2 4 6 8 10
VGS[V] VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj RDS(on)=f(VGS),ID=39A;parameter:Tj

Final Data Sheet 6 Rev.2.1,2019-09-02

 OptiMOSTM3Power-Transistor,100V
IPA126N10NM3S

Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage
2.4 3.5

3.0
2.0

2.5
RDS(on)(normalizedto25°C)

1.6

2.0

VGS(th)[V]
460 µA
1.2

1.5
46 µA
0.8
1.0

0.4
0.5

0.0 0.0
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
Tj[°C] Tj[°C]
RDS(on)=f(Tj),ID=39A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 103
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
3
10

102

Coss
C[pF]

IF[A]

2
10

101

101 Crss

100 100
0 20 40 60 80 100 0.00 0.25 0.50 0.75 1.00 1.25 1.50
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 7 Rev.2.1,2019-09-02

 OptiMOSTM3Power-Transistor,100V
IPA126N10NM3S

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
2
10 10
20 V
50 V
80 V

25 °C
101

VGS[V]
IAV[A]

100 °C 4
0
10

150 °C 2

10-1 0
100 101 102 103 0 4 8 12 16 20 24 28
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=39Apulsed,Tj=25°C;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms

111

109

107

105
VBR(DSS)[V]

103

101

99

97

95
-80 -40 0 40 80 120 160 200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 8 Rev.2.1,2019-09-02

 OptiMOSTM3Power-Transistor,100V
IPA126N10NM3S

5PackageOutlines

1 2 3

MILLIMETERS
DIMENSIONS
MIN. MAX.
DOCUMENT NO.
A 4.50 4.90
Z8B00181328
A1 2.34 2.80
A2 2.42 2.86 REVISION
b 0.65 0.90 03
b1 0.95 1.38 ISSUE DATE
b2 1.20 1.50 23.07.2018
b3 0.65 1.38
b4 1.20 1.50 SCALE 5:1
c 0.40 0.63
D 15.67 16.15 0 1 2 3 4 5mm
D1 8.97 9.83
E 10.00 10.65
e 2.54
EUROPEAN PROJECTION
H 28.70 29.75
L 12.78 13.75
L1 2.83 3.45
øP 3.00 3.38
Q 3.15 3.50

Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches

Final Data Sheet 9 Rev.2.1,2019-09-02

 OptiMOSTM3Power-Transistor,100V
IPA126N10NM3S

RevisionHistory
IPA126N10NM3S

Revision:2019-09-02,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2019-07-22 Release of final version
2.1 2019-09-02 Update package outline

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Final Data Sheet 10 Rev.2.1,2019-09-02