IPA030N10NF2S

MOSFET
StrongIRFETTM2Power-Transistor PG-TO220FP

Features
•Optimizedforawiderangeofapplications
•N-Channel,normallevel
•100%avalanchetested
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21

Productvalidation
QualifiedaccordingtoJEDECStandard

Drain
Table1KeyPerformanceParameters Pin 2

Parameter Value Unit

VDS 100 V Gate
Pin 1

RDS(on),max 3.0 mΩ Source

Pin 3
ID 83 A
Qoss 131 nC
QG 103 nC

Type/OrderingCode Package Marking RelatedLinks

IPA030N10NF2S PG-TO220 FullPAK 030N10NS -

Final Data Sheet 1 Rev.2.0,2021-03-16

 StrongIRFETTM2Power-Transistor
IPA030N10NF2S

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Final Data Sheet 2 Rev.2.0,2021-03-16

 StrongIRFETTM2Power-Transistor
IPA030N10NF2S

1Maximumratings
atTA=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 83 VGS=10V,TC=25°C
Continuous drain current1) ID A
- - 59 VGS=10V,TC=100°C
Pulsed drain current2) ID,pulse - - 332 A TA=25°C
Avalanche energy, single pulse 3)
EAS - - 598 mJ ID=72A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 41 W TC=25°C
IEC climatic category; DIN IEC 68-1:
Operating and storage temperature Tj,Tstg -55 - 175 °C
55/175/56

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 3.7 °C/W -

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.2 3.0 3.8 V VDS=VGS,ID=169µA
- 0.1 1.0 VDS=100V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=100V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
- 2.6 3.0 VGS=10V,ID=50A
Drain-source on-state resistance4) RDS(on) mΩ
- 2.98 3.6 VGS=6V,ID=25A
Gate resistance RG - 1.8 - Ω -
Transconductance 5)
gfs 74 - - S |VDS|≥2|ID|RDS(on)max,ID=50A

1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
4)
RDS(on) is specified at a distance of 1.8 mm distance to the package body; mounting at a larger distance increases the overall
package resistance of approximately 0.04 mOhm/mm per leg.
5)
Defined by design. Not subject to production test.
Final Data Sheet 3 Rev.2.0,2021-03-16
 StrongIRFETTM2Power-Transistor
IPA030N10NF2S

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 7300 - pF VGS=0V,VDS=50V,f=1MHz
Output capacitance Coss - 1100 - pF VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance Crss - 49 - pF VGS=0V,VDS=50V,f=1MHz
VDD=50V,VGS=10V,ID=50A,
Turn-on delay time td(on) - 20 - ns
RG,ext=1.6Ω
VDD=50V,VGS=10V,ID=50A,
Rise time tr - 65 - ns
RG,ext=1.6Ω
VDD=50V,VGS=10V,ID=50A,
Turn-off delay time td(off) - 47 - ns
RG,ext=1.6Ω
VDD=50V,VGS=10V,ID=50A,
Fall time tf - 26 - ns
RG,ext=1.6Ω

Table6Gatechargecharacteristics1)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 32 - nC VDD=50V,ID=50A,VGS=0to10V
Gate charge at threshold Qg(th) - 22 - nC VDD=50V,ID=50A,VGS=0to10V
Gate to drain charge Qgd - 21 - nC VDD=50V,ID=50A,VGS=0to10V
Switching charge Qsw - 31 - nC VDD=50V,ID=50A,VGS=0to10V
Gate charge total 2)
Qg - 103 154 nC VDD=50V,ID=50A,VGS=0to10V
Gate plateau voltage Vplateau - 4.4 - V VDD=50V,ID=50A,VGS=0to10V
Output charge Qoss - 131 - nC VDS=50V,VGS=0V

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 32 A TC=25°C
Diode pulse current IS,pulse - - 332 A TC=25°C
Diode forward voltage VSD - 0.81 1.2 V VGS=0V,IF=25A,Tj=25°C
Reverse recovery time trr - 64 - ns VR=50V,IF=25A,diF/dt=100A/µs
Reverse recovery charge Qrr - 142 - nC VR=50V,IF=25A,diF/dt=100A/µs

1)
See ″Gate charge waveforms″ for parameter definition
2)
Defined by design. Not subject to production test.
Final Data Sheet 4 Rev.2.0,2021-03-16
 StrongIRFETTM2Power-Transistor
IPA030N10NF2S

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
50 100

40 80

30 60
Ptot[W]

ID[A]
20 40

10 20

0 0
0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 102
single pulse
1 µs 0.01
10 µs 0.02
102 0.05
100 µs 0.1
10 ms 1 ms 0.2
101 0.5

101
ZthJC[K/W]
ID[A]

100 100

DC
10-1

10-1

10-2

10-3 10-2
10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100 101
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 5 Rev.2.0,2021-03-16

 StrongIRFETTM2Power-Transistor
IPA030N10NF2S

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
350 8
10 V
4.5 V
8V 7 5V
300
7V
6
250 6V

5
200

RDS(on)[mΩ]
ID[A]

4
5V
150
6V
3 7V
8V
100
2 10 V

4.5 V
50
1

0 0
0 1 2 3 4 5 0 25 50 75 100 125 150 175
VDS[V] ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance
350 8

7
300

6
250

5 175 °C
200
RDS(on)[mΩ]
ID[A]

150
3
25 °C
100
2

50 175 °C 1
25 °C
0 0
0 1 2 3 4 5 6 7 0 2 4 6 8 10
VGS[V] VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj RDS(on)=f(VGS),ID=50A;parameter:Tj

Final Data Sheet 6 Rev.2.0,2021-03-16

 StrongIRFETTM2Power-Transistor
IPA030N10NF2S

Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage
2.0 4.0

3.5

1.6
3.0
RDS(on)(normalizedto25°C)

2.5
1.2

VGS(th)[V]
2.0
1690 µA
0.8
1.5
169 µA

1.0
0.4

0.5

0.0 0.0
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
Tj[°C] Tj[°C]
RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 103
Ciss 25 °C
25 °C, max
175 °C
175 °C, max

103 102
Coss
C[pF]

IF[A]

102 101

Crss

101 100
0 20 40 60 80 100 0.00 0.25 0.50 0.75 1.00 1.25 1.50
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 7 Rev.2.0,2021-03-16

 StrongIRFETTM2Power-Transistor
IPA030N10NF2S

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
2
10 10
20 V
50 V
80 V

25 °C 8

100 °C

VGS[V]
IAV[A]

101
150 °C

100 0
100 101 102 103 0 20 40 60 80 100 120
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=50Apulsed,Tj=25°C;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms

108

106

104
VBR(DSS)[V]

102

100

98

96
-80 -40 0 40 80 120 160 200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 8 Rev.2.0,2021-03-16

 StrongIRFETTM2Power-Transistor
IPA030N10NF2S

5PackageOutlines

PACKAGE - GROUP
NUMBER: PG-TO220-3-U02
REVISION: 01 DATE: 02.02.2021
MILLIMETERS
DIMENSIONS
MIN. MAX.
A 4.50 4.90
A1 2.34 2.85
A2 2.42 3.43
b 0.61 0.94
b1 0.76 1.45
b2 0.95 1.52
c 0.33 0.63
D 15.67 16.15
D1 8.66 9.83
E 9.63 10.75
e 2.54
H 29.00 29.85
L 12.78 13.75
L1 2.83 3.67
øP 3.05 3.45
Q 3.20 3.50

Figure1OutlinePG-TO220FullPAK,dimensionsinmm

Final Data Sheet 9 Rev.2.0,2021-03-16

 StrongIRFETTM2Power-Transistor
IPA030N10NF2S

RevisionHistory
IPA030N10NF2S

Revision:2021-03-16,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2021-03-16 Release of final version

Trademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com

Publishedby
InfineonTechnologiesAG
81726München,Germany
©2020InfineonTechnologiesAG
AllRightsReserved.

LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).

Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe
product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation
warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe
productofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s
technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct
informationgiveninthisdocumentwithrespecttosuchapplication.

Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).

Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet 10 Rev.2.0,2021-03-16